US4298882A
Expired / Lapsed
US
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Multilayer semiconductor element
Assignee: CKD Praha Oborovy Podnik
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Filing: 1980-10-15
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Granted: 1981-11-03
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Expires: 2000-10-15
Abstract
Abstract A multilayer semiconductor element with improved dynamic electric parameters obtained by a suitable geometric arrangement of the control zone and by the use of a controlled emitter.
Inventors
- 👤 Jaroslav Homola
- 👤 Karel Remajzl
- 👤 Milan Prokes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 16:24
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/141; H10D62/148; H10D18/00; H10D18/221
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
384 words
A multilayer semiconductor element comprising a layer of a fundamental semiconductor material, a first and a second external semiconductor layer with a type of electrical conductivity opposite from that of the layer of the fundamental semiconductor material, the layer of fundamental semiconductor material being situated between said two external semiconductor layers, an emitter layer and an auxiliary emitter layer of the same type of conductivity as the layer of the fundamental semiconductor material being provided on the second external semiconductor layer, a first main electrode on the first external semiconductor layer, a second main electrode disposed above and in contact with the emitter layer on the second external semiconductor layer and also in contact with the second external semiconductor layer in a number of places and forming so-called microleaks, an auxiliary contact in contact with a part of the auxiliary emitter layer on the second external semiconductor layer and also in contact with the second external semiconductor layer, a central control electrode on the second external semiconductor layer, said auxiliary contact being provided between the second main electrode and the control electrode, the auxiliary emitter layer being situated between the control electrode and the peripheral edge portion of the emitter layer, the emitter layer being in contact with the second main electrode with the exception of the peripheral edge portion of the second main electrode near the control electrode, whereby the auxiliary emitter layer is in contact with the auxiliary contact, the auxiliary emitter layer being divided into at least two parts mutually separated by zones of the second external semiconductor layer, the peripheral edge portion of the emitter layer in the direction toward the control electrode being equally separated by zones of the second external semiconductor layer, said zones reaching up to contact the second main electrode and being equal in number to the parts of the auxiliary emitter layer, the geometric arrangements between the second external semiconductor layer and the second main electrode being the same in all parts of the surface of the emitter layer, the microleaks lying on circles with centers at the center of each part of the thus divided border of the emitter layer, said circles, having a radius equal to at least 1.5 times the distance of the centers of each nearest two microleaks from each other.
Claim 2
Dependent Claim
384 words
A multilayer semiconductor element comprising a layer of a fundamental semiconductor material, a first and a second external semiconductor layer with a type of electrical conductivity opposite from that of the layer of the fundamental semiconductor material, the layer of fundamental semiconductor material being situated between said two external semiconductor layers, an emitter layer and an auxiliary emitter layer of the same type of conductivity as the layer of the fundamental semiconductor material being provided on the second external semiconductor layer, a first main electrode on the first external semiconductor layer, a second main electrode disposed above and in contact with the emitter layer on the second external semiconductor layer and also in contact with the second external semiconductor layer in a number of places and forming so-called microleaks, an auxiliary contact in contact with a part of the auxiliary emitter layer on the second external semiconductor layer and also in contact with the second external semiconductor layer, a central control electrode on the second external semiconductor layer, said auxiliary contact being provided between the second main electrode and the control electrode, the auxiliary emitter layer being situated between the control electrode and the peripheral edge portion of the emitter layer, the emitter layer being in contact with the second main electrode with the exception of the peripheral edge portion of the second main electrode near the control electrode, whereby the auxiliary emitter layer is in contact with the auxiliary contact, the auxiliary emitter layer being divided into at least two parts mutually separated by zones of the second external semiconductor layer, the peripheral edge portion of the emitter layer in the direction toward the control electrode being equally separated by zones of the second external semiconductor layer, said zones reaching up to contact the second main electrode and being equal in number to the parts of the auxiliary emitter layer, the geometric arrangements between the second external semiconductor layer and the second main electrode being the same in all parts of the surface of the emitter layer, the microleaks lying on circles with centers at the center of each part of the thus divided border of the emitter layer, said circles, having a radius equal to at least 1.5 times the distance of the centers of each nearest two microleaks from each other.
Claim 3
Dependent Claim
124 words
A multilayer semiconductor element as claimed in claim 1, wherein the microleaks are circular and the individual parts of the emitter layer and the individual parts of the border of the emitter layer in the direction toward the control electrode are determined by equal sectors of a circle with an angle between 18° and 55°, and the center of the circular microleaks on the surface of the emitter layer are disposed on a network of equilateral triangles with a geometric factor k which is given by the equation ##EQU2## where r is the radius of the microleak d the distance of centers of two microleaks of the network, the magnitude of k being between 9.10 -3 mm 2 and 1.8.10 -1 mm 2 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-11-02 | 1985-05-04 | 1985-11-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-11-02 | 1989-05-04 | 1989-11-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-11-02 | 1993-05-04 | 1993-11-03 | $7700.00 | Window Closed / Lapsed |