Patent US4350994A successfully refreshed from Google Patents.
US4350994A
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Semiconductor device having an amorphous metal layer contact
Assignee: Wisconsin Alumni Research Foundation
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Filing: 1979-10-04
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Granted: 1982-09-21
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Expires: 1999-10-04
Abstract
Abstract Ohmic contacts for high temperature semiconductor devices comprising a layer strongly bonded to the surface of the semiconductor in the form of an alloy of a metal in the amorphous state in which the metal is a transition metal or a refractory metal having a recrystallization temperature from the amorphous state in excess of 200° C.
Inventors
- 👤 John H. Perepezko
- 👤 John D. Wiley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 20:10
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0116; H10D64/0111; H10W; H10W70/00; H10W70/01; H10W70/05
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
86 words
A semiconductor device for high temperature use comprising a semiconductor as a base and a layer strongly bonded to the surface of the base consisting essentially of an alloy in the amorphous non-crystalline state of a metal selected from the group consisting of a transition metal, transition metal/normal metal alloy, refractory metal and refractory metal/normal metal alloy, in which the amorphous metal layer has a crystallization temperature and stable microstructure at temperatures above 500° C., said amorphous metal layer being resistant to interdiffusion with the base.
Claim 2
Dependent Claim
86 words
A semiconductor device for high temperature use comprising a semiconductor as a base and a layer strongly bonded to the surface of the base consisting essentially of an alloy in the amorphous non-crystalline state of a metal selected from the group consisting of a transition metal, transition metal/normal metal alloy, refractory metal and refractory metal/normal metal alloy, in which the amorphous metal layer has a crystallization temperature and stable microstructure at temperatures above 500° C., said amorphous metal layer being resistant to interdiffusion with the base.
Claim 3
Dependent Claim
15 words
A device as claimed in claim 1 in which the alloy is a multi-component alloy.
Claim 4
Dependent Claim
18 words
A device as claimed in claim 2 in which the alloy is a binary or a ternary alloy.
Claim 5
Dependent Claim
24 words
A device as claimed in claim 1 in which the alloy is selected from the group consisting of Ni-Mo, Ni-Nb, Mo-Si, W-Si and Ni-Ta.
Claim 6
Dependent Claim
16 words
A devie as claimed in claim 1 in which hafnium is included in the amorphous layer.
Claim 7
Dependent Claim
25 words
A device as claimed in claim 1 in which the base onto which the layer of amorphous alloy is bonded is a semiconductor or insulator.
Claim 8
Dependent Claim
26 words
A devie as claimed in claim 6 in which the base is selected from the group consisting of Si, GaAs, GaP, glass and Al20 3 .
Claim 9
Dependent Claim
26 words
A device as claimed in claim 1 in which the layer of amorphous metal is of a thickness within the range of 0.01 to 50 microns.
Claim 10
Dependent Claim
22 words
A device as claimed in claim 1 in which the amorphous metal alloy is deposited by atomic deposition onto the substrate base.
Claim 11
Dependent Claim
22 words
A device as claimed in claim 1 in which the amorphous metal alloy is deposited onto the semiconductor base by RF sputtering.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-09-20 | 1986-03-22 | 1986-09-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-09-20 | 1990-03-22 | 1990-09-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-09-20 | 1994-03-22 | 1994-09-21 | $7700.00 | Window Closed / Lapsed |