Patent US4348690A successfully refreshed from Google Patents.
US4348690A
Expired / Lapsed
US
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Semiconductor imagers
Assignee: RCA Corp
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Filing: 1981-04-30
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Granted: 1982-09-07
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Expires: 2001-04-30
Abstract
Abstract A gradient in the impurity concentration of the semiconductor material in a CCD imager, normal to the surface in which the charge-accumulation wells are induced, speeds the collection of charge carriers formed further from the surface by photon interaction with the semiconductor lattice. This reduces the chance for crosstalk between charge-accumulation wells owing to sideways diffusion.
Inventors
- 👤 Lubomir L. Jastrzebski
- 👤 Peter A. Levine
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 14:15
CPC Classifications
H; H04; H04N; H04N25/00; H04N25/70; H04N25/71; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/156
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
259 words
In a charge-coupled-device imager system having: an optical lens system for projecting a light image in a plane; a color discriminating optical filter, included in said optical system, for causing said projected light image to be projected in a prescribed pattern of separated colors; a charge-coupled-device including a region of semiconductive material arranged so said light image is projected thereinto for generating charge carriers at sites therein, said region of semiconductive material having a plane surface normal to the direction of projection of said light image into said region of semiconductive material including a dielectric layer having a first surface at the plane surface of said region of semiconductive material and having a second surface opposing its first surface, and including means inducing potential wells in said region of semiconductive material adjacent to its plane surface, for collecting charge carriers generated in their respective vicinities and integrating the collected charge carriers to form respective charge signals, which means includes electrodes disposed on the second surface of said dielectric layer; and means for recurrently sampling in prescribed temporal order the charge signals from selected ones of said potential wells to generate color video signals--the improvement wherein said region of semiconductive material is of a type having an internal drift field for accelerating the diffusion of said charge carriers through said semiconductive material in a direction towards said plane surface to substantially reduce the likelihood of any of them being collected in a potential well other than the closest one to its respective generation site in said region of semiconductive material.
Claim 2
Dependent Claim
259 words
In a charge-coupled-device imager system having: an optical lens system for projecting a light image in a plane; a color discriminating optical filter, included in said optical system, for causing said projected light image to be projected in a prescribed pattern of separated colors; a charge-coupled-device including a region of semiconductive material arranged so said light image is projected thereinto for generating charge carriers at sites therein, said region of semiconductive material having a plane surface normal to the direction of projection of said light image into said region of semiconductive material including a dielectric layer having a first surface at the plane surface of said region of semiconductive material and having a second surface opposing its first surface, and including means inducing potential wells in said region of semiconductive material adjacent to its plane surface, for collecting charge carriers generated in their respective vicinities and integrating the collected charge carriers to form respective charge signals, which means includes electrodes disposed on the second surface of said dielectric layer; and means for recurrently sampling in prescribed temporal order the charge signals from selected ones of said potential wells to generate color video signals--the improvement wherein said region of semiconductive material is of a type having an internal drift field for accelerating the diffusion of said charge carriers through said semiconductive material in a direction towards said plane surface to substantially reduce the likelihood of any of them being collected in a potential well other than the closest one to its respective generation site in said region of semiconductive material.
Claim 3
Dependent Claim
97 words
A semiconductor imager comprising: a semiconductor region having a front and a back surface, receptive of an image projected through one of its surfaces; means for inducing potential wells in the front surface of said semiconductor region; and an impurity concentration gradient in said semiconductor region between said front and back surfaces providing a built-in electric field gradient for accelerating the charge carriers created in response to the image projected onto its image receiving surface, and directing the charge carriers from the charge generation sites to said potential wells along paths predominantly normal to said front surface.
Claim 4
Dependent Claim
97 words
A semiconductor imager comprising: a semiconductor region having a front and a back surface, receptive of an image projected through one of its surfaces; means for inducing potential wells in the front surface of said semiconductor region; and an impurity concentration gradient in said semiconductor region between said front and back surfaces providing a built-in electric field gradient for accelerating the charge carriers created in response to the image projected onto its image receiving surface, and directing the charge carriers from the charge generation sites to said potential wells along paths predominantly normal to said front surface.
Claim 5
Dependent Claim
27 words
A semiconductor imager as set forth in claim 2 wherein the semiconductor region is of one conductivity type and said impurities are of the same conductivity type.
Claim 6
Dependent Claim
120 words
A semiconductor imager comprising: a region of semiconductive material having opposing first and second surfaces, through one of which surfaces a radiant energy image is received to generate charge carriers within said region, and having an impurity concentration gradient between said first and second surfaces which establishes an internal electric field gradient within said region for tending to direct the charge carriers thus generated towards said first surface; means for collecting the charge carriers directed to each of specific areas of said first surface to form a respective charge signal associated with that specific area; and means for recurrently sampling said charge signals in a prescribed temporal order to generate a video electric signal descriptive of said radiant energy image.
Claim 7
Dependent Claim
120 words
A semiconductor imager comprising: a region of semiconductive material having opposing first and second surfaces, through one of which surfaces a radiant energy image is received to generate charge carriers within said region, and having an impurity concentration gradient between said first and second surfaces which establishes an internal electric field gradient within said region for tending to direct the charge carriers thus generated towards said first surface; means for collecting the charge carriers directed to each of specific areas of said first surface to form a respective charge signal associated with that specific area; and means for recurrently sampling said charge signals in a prescribed temporal order to generate a video electric signal descriptive of said radiant energy image.
Claim 8
Dependent Claim
105 words
A semiconductor imager including: a region of semiconductive material having opposing first and second surfaces, through one of which surfaces a radiant energy image is received to generate charge carriers within that region; means for generating within said region of semiconductor material an electric field gradient tending continuously to direct the charge carriers generated in response to said radiant energy image towards said first surface in a direction perpendicular to said first surface; a dielectric layer disposed on said first surface; and electrodes disposed on said dielectric layer opposite the first surface of said region for inducing potential wells in which charge carriers are collected.
Claim 9
Dependent Claim
105 words
A semiconductor imager including: a region of semiconductive material having opposing first and second surfaces, through one of which surfaces a radiant energy image is received to generate charge carriers within that region; means for generating within said region of semiconductor material an electric field gradient tending continuously to direct the charge carriers generated in response to said radiant energy image towards said first surface in a direction perpendicular to said first surface; a dielectric layer disposed on said first surface; and electrodes disposed on said dielectric layer opposite the first surface of said region for inducing potential wells in which charge carriers are collected.
Claim 10
Dependent Claim
101 words
A semiconductor imager including: a region of semiconductive material having opposing first and second surfaces, through one of which surfaces a radiant energy image is received to generate charge carriers within that region, and having an impurity concentration gradient between said first and second surfaces which establishes an internal electric field gradient within that region for tending to direct the charge carriers thus generated towards said first plane surface; a dielectric layer disposed on said first surface; and electrodes disposed on said dielectric layer opposite the first surface of said region for inducing potential wells in which charge carriers are collected.
Claim 11
Dependent Claim
101 words
A semiconductor imager including: a region of semiconductive material having opposing first and second surfaces, through one of which surfaces a radiant energy image is received to generate charge carriers within that region, and having an impurity concentration gradient between said first and second surfaces which establishes an internal electric field gradient within that region for tending to direct the charge carriers thus generated towards said first plane surface; a dielectric layer disposed on said first surface; and electrodes disposed on said dielectric layer opposite the first surface of said region for inducing potential wells in which charge carriers are collected.
Claim 12
Dependent Claim
47 words
A semiconductor imager as set forth in claim 4, 5 or 6 of a type suited for projection of a radiant energy image through the first surface of said region of semiconductive material in combination with: means for projecting a radiant energy image through that first surface.
Claim 13
Dependent Claim
47 words
A semiconductor image as set forth in claim 4, 5, or 6 of a type suited for projection of a radiant energy image through the second surface of said region of semiconductive material in combination with: means for projecting a radiant energy image through that second surface.
Claim 14
Dependent Claim
26 words
A semiconductor imager as set forth in claim 2, 4, 5, or 6 having: means for conditioning said semiconductor imager to operate as a charge-coupled-device imager.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-09-06 | 1986-03-08 | 1986-09-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-09-06 | 1990-03-08 | 1990-09-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-09-06 | 1994-03-08 | 1994-09-07 | $7700.00 | Window Closed / Lapsed |