US3838438A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Detection, inversion, and regeneration in charge transfer apparatus
Assignee: AT&T Inc
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Filing: 1973-03-02
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Granted: 1974-09-24
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Expires: 1993-03-02
Abstract
Abstract Improved means are described for detecting and regenerating information in charge transfer apparatus. In those types of such apparatus having means associated with each electrode for producing thereunder asymmetric potential wells, detection is accomplished by disposing a heavily doped zone under a gap between a pair of successive electrodes and extending that heavily doped zone outside the information channel and passively connecting that extended zone to the gate of an IGFET. In a particular regenerator embodiment, an IGFET diode is included in series with the source-drain circuit of an IGFET to improve control over the launching of the regenerated signal.
Inventors
- 👤 D Silversmith
- 👤 R Strain
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 22:23
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/456; G; G11; G11C; G11C19/00; G11C19/28; G11C19/282; G11C19/285
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
177 words
In charge coupled apparatus of the type including a semiconductive storage medium and means forming an information channel and including a plurality of electrodes and barrier means associated with each electrode for imparting asymmetry to the potential well formed under each electrode upon application of a voltage thereto, means for detecting and regenerating information stored therein comprising: a first insulated gate field-effect transistor (IGFET) having source and drain zones and a gate electrode; a heavily doped detector zone disposed under the space between a pair of adjacent electrodes; means coupling the voltage of the heavily doped zone to the gate electrode of the first IGFET; an IGFET diode having a gate electrode and a drain zone connected in common and having a source zone electrically common with the drain of the first IGFET; and firsT field plate electrode means and barrier means disposed on the downstream side of the heavily doped zone for resetting the voltage of the heavily doped zone in response to a voltage applied to the field plate electrode prior to a detecting operation.
Claim 2
Dependent Claim
177 words
In charge coupled apparatus of the type including a semiconductive storage medium and means forming an information channel and including a plurality of electrodes and barrier means associated with each electrode for imparting asymmetry to the potential well formed under each electrode upon application of a voltage thereto, means for detecting and regenerating information stored therein comprising: a first insulated gate field-effect transistor (IGFET) having source and drain zones and a gate electrode; a heavily doped detector zone disposed under the space between a pair of adjacent electrodes; means coupling the voltage of the heavily doped zone to the gate electrode of the first IGFET; an IGFET diode having a gate electrode and a drain zone connected in common and having a source zone electrically common with the drain of the first IGFET; and firsT field plate electrode means and barrier means disposed on the downstream side of the heavily doped zone for resetting the voltage of the heavily doped zone in response to a voltage applied to the field plate electrode prior to a detecting operation.
Claim 3
Dependent Claim
24 words
Apparatus as recited in claim 1 wherein the means coupling the voltage of the heavily doped zone to the gate electrode is entirely passive.
Claim 4
Dependent Claim
44 words
Apparatus as recited in claim 2 wherein the coupling means includes a substantially ohmic conduction path having two ends, one of which is connected to the heavily doped zone and the other of which is connected to the gate electrode of the first IGFET.
Claim 5
Dependent Claim
34 words
Apparatus as recited in claim 1 wherein the means coupling the voltage of the heavily doped zone to the gate electrode includes an extension of the heavily doped zone laterally outside the information channel.
Claim 6
Dependent Claim
56 words
Apparatus as recited in claim 1 including: a second field plate electrode on the downstream side of and adjacent to the IGFET diode, said second field plate electrode being larger in area than the other electrodes; and an additional heavily doped zone disposed adjacent to and on the downstream side of the second field plate electrode.
Claim 7
Dependent Claim
18 words
Apparatus as recited in claim 5 wherein no barrier means are associated with the second field plate electrode.
Claim 8
Dependent Claim
27 words
Apparatus as recited in claim 5 wherein the additional heavily doped zone is connected by substantially conductive means to the drain and gate of the IGFET diode.
Claim 9
Dependent Claim
27 words
Apparatus as recited in claim 5 wherein the additional heavily doped zone is connected so as to be electrically common with the drain of the IGFET diode.
Claim 10
Dependent Claim
56 words
Apparatus as recited in claim 8 including a heavily doped strip of the same type semiconductivity as the drain zone of the IGFET and the additional heavily doped zone, the strip being disposed longitudinally along an edge of the information channel between and intersecting the drain zone of the IGFET and the additional heavily doped zone.
Claim 11
Dependent Claim
45 words
Apparatus as recited in claim 9 wherein the second field plate electrode is disposed essentially only over that part of the information channel between the drain of the IGFET diode and the additional heavily doped zone other than that occupied by the heavily doped strip.
Claim 12
Dependent Claim
32 words
Apparatus as recited in claim 1 including a plurality of the heavily doped zones, a separate one of which is disposed under each space between adjacent ones of the plurality of electrodes.
References Cited (Backward Citations)
US3735156A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-09-23 | 1978-03-25 | 1978-09-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-09-23 | 1982-03-25 | 1982-09-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-09-23 | 1986-03-25 | 1986-09-24 | $7700.00 | Window Closed / Lapsed |