Patent US4347612A successfully refreshed from Google Patents.
US4347612A
Expired / Lapsed
US
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Semiconductor injection laser for high speed modulation
Assignee: Xerox Corp
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Filing: 1980-08-25
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Granted: 1982-08-31
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Expires: 2000-08-25
Abstract
Abstract A semiconductor injection laser is provided with an integrated optical injector means on same substrate as the laser which has an optical emitter region noncolinear with the axis of optical emission from the laser but optically coupled to the laser at one or more points along its length. The optical injector means is independently operative prior to or simultaneously with the independently operated laser to inject radiation into the laser optical emitter region to decrease the response time of the laser to pulsed current modulation.
Inventors
- 👤 Dan H. Fekete
- 👤 Donald R. Scifres
- 👤 William Streifer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 07:36
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/40; H01S5/4006; H01S5/06; H01S5/0607; H01S5/0608; H01S5/10; H01S5/1028; H01S5/1032; H01S5/02; H01S5/026; H01S5/062; H01S5/06209; H01S5/06216; H01S5/1003
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
155 words
In a semiconductor injection laser for high speed modulation wherein several layers of semiconductor material are fabricated on a semiconductor substrate, one of said layers forming an active layer wherein radiation is generated upon forward biasing of said laser and upon applying pumping current to said active layer in excess of its lasing threshold whereby an optical emitter region is created having an axis along which the generated radiation propagates characterized by optical injector means on the same substrate as said laser and having its own optical emitting region non-colinear with the axis of optical emission of said laser but optically coupled thereto at at least one point therealong and, means operatively associated with said optical injector means to cause said injector means to inject radiation into said laser optical emitter region just prior to or concurrently with the pulsing of said laser to decrease the response time of said laser to pulsed current modulation.
Claim 2
Dependent Claim
155 words
In a semiconductor injection laser for high speed modulation wherein several layers of semiconductor material are fabricated on a semiconductor substrate, one of said layers forming an active layer wherein radiation is generated upon forward biasing of said laser and upon applying pumping current to said active layer in excess of its lasing threshold whereby an optical emitter region is created having an axis along which the generated radiation propagates characterized by optical injector means on the same substrate as said laser and having its own optical emitting region non-colinear with the axis of optical emission of said laser but optically coupled thereto at at least one point therealong and, means operatively associated with said optical injector means to cause said injector means to inject radiation into said laser optical emitter region just prior to or concurrently with the pulsing of said laser to decrease the response time of said laser to pulsed current modulation.
Claim 3
Dependent Claim
27 words
In the semiconductor injection laser of claim 1 wherein the optical emitter regions of said laser and injector means are optically coupled via a common connected portion.
Claim 4
Dependent Claim
47 words
In the semiconductor injection laser of claim 1 wherein the optical emitter regions of said laser and injector means are optically coupled by disposing them in proximity to each other such that there is overlapping radiation from said injector means into the emitter region of said laser.
Claim 5
Dependent Claim
41 words
In the semiconductor injection laser of claim 1 wherein there is more than one laser on said substrate with any pair of said lasers being optically coupled at one point along their axis of radiation propagation by single optical injector means.
Claim 6
Dependent Claim
27 words
In the semiconductor laser of claim 1 wherein there is more than one optical injector means on said substrate to inject radiation into said laser emitter region.
Claim 7
Dependent Claim
42 words
In the semiconductor laser of claim 5 wherein there is more than one laser on said substrate with any pair of said lasers being optically coupled at one point along their axis of radiation propagation by one or more optical injector means.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-08-30 | 1986-03-01 | 1986-08-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-08-30 | 1990-03-01 | 1990-08-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-08-30 | 1994-03-01 | 1994-08-31 | $7700.00 | Window Closed / Lapsed |