Patent US4347611A successfully refreshed from Google Patents.
← Back to Patent Explorer
US4347611A Expired / Lapsed US ⏱️ 0.0 years remaining

Large optical cavity (LOC) mesa laser

Assignee: Xerox Corp
•
Filing: 1980-11-06
•
Granted: 1982-08-31
•
Expires: 2000-11-06
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract In an injection laser of the type having a mesa provided on the substrate, at least one or more radiation confinement layers is provided in the laser and with the active layer form an enlarged optical cavity (LOC) for radiation propagation to focus the beam produced into a narrow index guided filament.

Inventors

  • 👤 Donald R. Scifres
  • 👤 Robert D. Burnham
  • 👤 William Streifer

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 20:53
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2238

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 223 words
In an injection laser having a plurality of contiguous semiconductor layers deposited on a semiconductor substrate, one of said layers fabricated to have a lower bandgap and higher refractive index than at least adjacent layers thereto to form an active layer for carrier recombination and radiation propagation under lasing conditions, cladding layers comprising said adjacent layers, an elongated mesa on the top surface of said substrate whereby during crystal growth of said semiconductor layers, said active layer and cladding layers will form about said mesa, means associated with said laser to confine current to a portion of said active layer, said current confinement means having a longitudinal extent parallel with the elongated extent of said mesa and being displaced therefrom whereby said radiation propagation and radiation emission from said laser occurs in and from a region in said active layer at the point of said displacement, the improvement comprising at least one radiation confining layer provided between said active layer and one of said cladding layers, said radiation confining layer having a bandgap and index of refraction intermediate of the bandgap and the indices of refraction of said active layer and said one cladding layer, said radiation confining layer forming a large optical cavity for the propagation of said radiation to focus the beam produced thereby into a narrow index guided radiation filament.
Claim 2
Dependent Claim 223 words
In an injection laser having a plurality of contiguous semiconductor layers deposited on a semiconductor substrate, one of said layers fabricated to have a lower bandgap and higher refractive index than at least adjacent layers thereto to form an active layer for carrier recombination and radiation propagation under lasing conditions, cladding layers comprising said adjacent layers, an elongated mesa on the top surface of said substrate whereby during crystal growth of said semiconductor layers, said active layer and cladding layers will form about said mesa, means associated with said laser to confine current to a portion of said active layer, said current confinement means having a longitudinal extent parallel with the elongated extent of said mesa and being displaced therefrom whereby said radiation propagation and radiation emission from said laser occurs in and from a region in said active layer at the point of said displacement, the improvement comprising at least one radiation confining layer provided between said active layer and one of said cladding layers, said radiation confining layer having a bandgap and index of refraction intermediate of the bandgap and the indices of refraction of said active layer and said one cladding layer, said radiation confining layer forming a large optical cavity for the propagation of said radiation to focus the beam produced thereby into a narrow index guided radiation filament.
Claim 3
Dependent Claim 28 words
In the injection laser of claim 1 wherein there is a radiation confining layer provided on adjacent sides of said active layer between said active and cladding layers.
Claim 4
Dependent Claim 27 words
In the injection laser of either claim 1 or 2 wherein said cladding layer(s) possess a region of enlarged thickness adjacent to said active layer emission region.
Claim 5
Dependent Claim 26 words
In the injection laser of claim 2 wherein there is means in said radiation confining layers to produce a quantitative difference in their relative refractive indices.
Claim 6
Dependent Claim 25 words
In the injection laser of claim 4 wherein there is means in said cladding layers to produce a quantitative difference in their relative refractive indices.
Claim 7
Dependent Claim 24 words
In the injection laser of either claim 4 or 5 wherein said means comprises a compositional difference in the semiconductor material comprising said layers.

References Cited (Backward Citations)

US4296387A Cited
US4249142A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1985-08-30 1986-03-01 1986-08-31 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1989-08-30 1990-03-01 1990-08-31 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1993-08-30 1994-03-01 1994-08-31 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag