Semiconduction stress sensing apparatus

Claim 2

A stress transducing system supported in and on a semiconductor material stress sensing structure having structural portions including substantially a diaphragm and a constraint for constraining said diaphragm at peripheral portions thereof, with said structure having a major surface bounding semiconductor material, said semiconductor material being of a first conductivity type except in selected locations thereof, said major surface being common to both said diaphragm and said constraint, said stress transducing system comprising: a first semiconductor piezoresistive domain in said semiconductor material at a said selected location extending at least in part into said diaphragm, and with said domain being adjacent to said major surface, said first semiconductor piezoresistive domain having first and second terminating regions, said first semiconductor piezoresistive domain having therein a first distribution of dopant atoms with depth into said semiconductor material away from said major surface which leads to said first semiconductor piezoresistive domain being of a second conductivity type and having a temperature coefficient of resistance of a first magnitude which is effective in a first magnitude direction, said first semiconductor piezoresistive domain being a component part of a stress sensing circuit which is capable of providing a stress sensing circuit first output signal at a stress sensing circuit first output region of a magnitude varying in correspondence to changes in magnitude of stress applied to said diaphragm, said stress sensing circuit first output signal varying with such stress, as aforesaid, in a manner characteristic of said first semiconductor piezoresistive domain and remaining portions of said structure to thereby establish a stress sensing characteristic which characteristic also depends upon temperatures occurring in said structure; a first semiconductor resistive domain in said semiconductor material at a said selected location and adjacent to said major surface, said first semiconductor resistive domain having first and second terminating regions, said first semiconductor resistive domain having substantially said first distribution of dopant atoms therein leading to said first semiconductor resistive domain being of said second conductivity type and having a temperature coefficient of resistance of substantially said first magnitude which is effective in said first magnitude direction, said first resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, said first semiconductor resistive domain being a component part of a signal processing circuit having a signal processing circuit first input region which is electrically connected to said stress sensing circuit first output region and having a signal processing circuit output region, said signal processing circuit being capable of providing a stress transducer system output signal at said signal processing circuit output region which is a version of said stress sensing circuit first output signal but as compensated to be substantially free of effects of said temperature dependence in said stress sensing circuit characteristic; and a first primarily resistive domain adjacent to said major surface and supported by said structure, said first primarily resistive domain having first and second terminating regions, said first primarily resistive domain having a temperature coefficient of resistance of a magnitude substantially less than said first magnitude, said first primarily resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm and being a component part of said signal processing circuit.

Claim 3

The system of claim 1 wherein there is further provided a second semiconductor piezoresistive domain in said semiconductor material at a said selected location extending at least in part into said diaphragm, and provided adjacent to said major surface, said second semiconductor piezoresistive domain having first and second terminating regions, said second semiconductor piezoresistive domain having substantially said first distribution of dopant atoms therein leading to said second semiconductor piezoresistive domain being of said second conductivity type and having a temperature coefficient of resistance of substantially said first magnitude which is effective in said first magnitude direction, said second semiconductor piezoresistive domain being a component part of said stress sensing circuit with a selected one of said second semiconductor piezoresistive domain first and second terminating region being electrically connected to a selected one of said first semiconductor piezoresistive domain first and second terminating regions.

Claim 4

The system of claim 2 wherein there is further provided third and fourth semiconductor piezoresistive domains each in said semiconductor material at a said selected location extending at least in part into said diaphragm, and each provided adjacent to said major surface, said third semiconductor piezoresistive domain having first and second terminating regions and said fourth semiconductor piezoresistive domain having first and second terminating regions, said third and fouth semiconductor piezoresistive domains each having substantially said first distribution of dopant atoms therein leading to each of said third and fourth semiconductor piezoresistive domains being of said second conductivity type and each having a temperature coefficient of resistance of substantially said first magnitude which is effective in said first magnitude direction, said third and fourth semiconductor piezoresistive domains being component parts of said stress sensing circuit with said third semiconductor piezoresistive domain first terminating region being electrically connected to said first semiconductor piezoresistive domain first terminating region, and with said first semiconductor piezoresistive domain second terminating region being electrically connected to said second semiconductor piezoresistive domain second terminating region, and with said fourth semiconductor piezoresistive domain first terminating region being electrically connected to said second semiconductor piezoresistive domain first terminating region, and with said third semiconductor piezoresistive domain second terminating region being electrically connected to said fourth semiconductor piezoresistive domain second terminating region.

Claim 5

The system of claim 3 wherein there is further provided a second primarily resistive domain adjacent to said major surface and supported by said structure, said second primarily resistive domain having first and second terminating regions, said second primarily resistive domain having a temperature coefficient of resistance of a magnitude substantially less than said first magnitude, said second primarily resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, and said second primarily resistive domain being a component part of said stress sensing circuit with said second primarily resistive domain first terminating region being electrically connected to said first semiconductor piezoresistive domain second terminating region.

Claim 6

The system of claim 4 wherein said second primarily resistive domain second terminating region is electrically connected to a first terminal means adapted for electrical connection to a first source of voltage.

Claim 7

The system of claim 4 wherein at least one of said first and second primarily resistive domains has a construction selected from first and second constructions with said first construction being in said semiconductor material at a said selected location, and so supported by said structure, as aforesaid, and with said second construction as a thin film outside said semiconductor material but supported by said structure as aforesaid.

Claim 8

The system of claim 3 wherein there is further provided a second semiconductor resistive domain in said semiconductor material at a said selected location and adjacent to said major surface, said second semiconductor resistive domain having first and second terminating regions, said second semiconductor resistive domain having substantially said first distribution of dopant atoms therein leading to said second semiconductor resistive domain being of said second conductivity type and having a temperature coefficient of resistance of substantially said first magnitude which is effective in said first magnitude direction, said second semiconductor resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, said second semiconductor resistive domain being a component part of said stress sensing circuit with said second semiconductor resistive domain first terminating region being electrically connected to said first semiconductor piezoresistive domain second terminating region.

Claim 9

The system of claim 7 wherein there is further provided a second primarily resistive domain adjacent to said major surface and supported by said structure, said second primarily resistive domain having first and second terminating regions, said second primarily resistive domain having a temperature coefficient of resistance of a magnitude substantially less than said first magnitude, said second primarily resistive domain being substantially free of effects in electrical behavior in response to stresses applid to said diaphragm, and said second primarily resistive domain being a component part of said stress sensing circuit with said second primarily resistive domain first terminating region being electrically connected to said first semiconductor piezoresistive domain second terminating region.

Claim 10

The system of claim 3 wherein there is further provided a first operational amplifier in and on said semiconductor material in said structure adjacent to in part, and adjoining in part, said major surface, said first operational amplifier having a first input region which is capable of a high circuit impedance and having an output region which is capable of a low circuit impedance, said first operational amplifier being capable of providing a large magnitude gain in signals appearing at said first operational amplifier first output region over corresponding signals appearing at said first operational amplifier first input region, said first operational amplifier being electrically connected to first and second terminal means adapted for electrical connection to first and second sources of voltage, respectively, said first operational amplifier being part of said signal processing circuit with a selected one of said first semiconductor resistive domain and said first primarily resistive domain first terminating regions being electrically connected to said first operational amplifier first input region.

Claim 11

The system of claim 9 wherein a selected one of said first semiconductor resistive domain and said first primarily resistive domain second terminating regions is directly electrically connected to said first operational amplifier output region.

Claim 12

The system of claim 10 wherein: said first operational amplifier has a second input region which is capable of a high circuit impedance, and with said first operational amplifier being capable of providing a large magnitude gain in an opposite magnitude direction for signals appearing at said first operational amplifier output region over corresponding signals appearing at said first operational amplifier first input region, and with said first operational amplifier being capable of providing a large magnitude gain in an identical magnitude direction for signals appearing at said first operational amplifier output region over corresponding signals appearing at said first operational amplifier second input region, said first operational amplifier second input region serving as said signal processing circuit first input region and said first semiconductor piezoresistive domain first terminating region serving as said stress sensing circuit first output region; and a second operational amplifier is further provided in and on said semiconductor material is said structure adjacent to in part, and adjoining in part, said major surface, said second operational amplifier having a first input region which is capable of a high circuit impedance, a second input region which is capable of a high circuit impedance, and an output region which is capable of a low circuit impedance, said second operational amplifier being capable of providing a large magnitude gain in an opposite magnitude direction for signals appearing at said second operational amplifier output region over corresponding signals appearing at said second operational amplifier first input region, said second operational amplifier being capable of providing a large magnitude gain in an identical magnitude direction for signals appearing at said second operational amplifier output region over corresponding signals appearing at said second operational amplifier second input region, said second operational amplifier being electrically connected to third and fourth terminal means adapted for electrical connection to third and fourth sources of voltage, respectively, said second operational amplifier being a part of said signal processing circuit with that one remaining of said first semiconductor resistive domain and said first primarily resistive domain second terminating regions, after selection of one thereof to be directly electrically connected to said first operational amplifier output region, as aforesaid, being electrically connected to said second operational amplifier first input region, and with each of said first semiconductor resistive domain and said first primarily resistive domain first terminating regions being electrically connected to said first operational amplifier first input region, and with said second semiconductor piezoresistive domain first terminating region serving as a second output region of said stress sensing circuit and being electrically connected to said second operational amplifier second input region serving as a second input region of said signal processing circuit.

Claim 13

The system of claim 10 wherein there is further provided a second primarily resistive domain adjacent to said major surface and supported by said structure, said second primarily resistive domain having first and second terminating regions, said second primarily resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, and said second primarily resistive domain being a component part of said signal processing circuit with said first semiconductor resistive domain and said first primarily resistive domain first terminating regions each being electrically connected to said first operational amplifier first input region through said second primarily resistive domain by having said second primarily resistive domain first terminating region directly electrically connected to said first operational amplifier first input region and by having said second primarily resistive domain second terminating region directly electrically connected to each of said first semiconductor resistive domain and said first primarily resistive domain first terminating regions.

Claim 14

The system of claim 9 wherein said first operational amplifier has a second input region which is capable of a high circuit impedance, and with said first operational amplifier being capable of providing a large magnitude gain in an opposite magnitude direction for signals appearing at said first operational amplifier output region over corresponding signals appearing at said first operational amplifier first input region, and with said first operational amplifier being capable of providing a large magnitude gain in an identical magnitude direction for signals appearing at said first operational amplifier output region over corresponding signals appearing at said first operational amplifier second input region, said first operational amplifier second input region serving as said signal processing circuit first input region and said first semiconductor piezoresistive domain first terminating region serving as said stress sensing circuit first output region.

Claim 15

The system of claim 3 wherein said first distribution of dopant atoms has a maximum concentration of between 10 17 atoms/cm 3 and 10 19 atoms/cm 3 .

Claim 16

The system of claim 2 wherein there is further provided a second primarily resistive domain adjacent to said major surface and supported by said structure, said second primarily resistive domain having first and second terminating regions, said second primarily resistive domain having a temperature coefficient of resistance of a magnitude substantially less than said first magnitude, said second primarily resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, and said second primarily resistive domain being a component part of said stress sensing circuit with said second primarily resistive domain first terminating region being electrically connected to said first semiconductor piezoresistive domain second terminating region.

Claim 17

The system of claim 15 wherein said second primarily resistive domain second terminating region is electrically connected to a first terminal means adapted for electrical connection to a first source of voltage.

Claim 18

The system of claim 15 wherein at least one of said first and second primarily resistive domains has a construction selected from first and second constructions with said first construction being in said semiconductor material at a said selected location, and so supported by said structure, as aforesaid, and with said second construction being as a thin film outside said semiconductor material but supported by said structure as aforesaid.

Claim 19

The system of claim 2 wherein there is further provided a second semiconductor resistive domain in said semiconductor material at a said selected location and adjacent to said major surface, said second semiconductor resistive domain having first and second terminating regions, said second semiconductor resistive domain having substantially said first distribution of dopant atoms therein leading to said second semiconductor resistive domain being of said second conductivity type and having a temperature coefficient of substantially resistance of substantially said first magnitude which is effective in said first magnitude direction, said second semiconductor resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, said second semiconductor resistive domain being a component part of said stress sensing circuit with said second semiconductor resistive domain first terminating region being electrically connected to said first semiconductor piezoresistive domain second terminating region.

Claim 20

The system of claim 18 wherein there is further provided a second primarily resistive domain adjacent to said major surface and supported by said structure, said second primarily resistive domain having first and second terminating regions, said second primarily resistive domain having a temperature coefficient of resistance of a magnitude substantially less than said first magnitude, said second primarily resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, and said second primarily resistive domain being a component part of said stress sensing circuit with said second primarily resistive domain first terminating region being electrically connected to said first semiconductor piezoresistive domain second terminating region.

Claim 21

The system of claim 18 wherein there is further provided a third semiconductor resistive domain in said semiconductor material at a said selected location and adjacent to said major surface, said third semiconductor resistive domain having first and second terminating regions, said third semiconductor resistive domain having substantially said first distribution of dopant atoms therein leading to said third semiconductor resistive domain being of said second conductivity type and having a temperature coefficient of resistance of substantially said first magnitude which is effective in said first magnitude direction, said third semiconductor resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, said third semiconductor resistive domain being a component part of said stress sensing circuit with said third semiconductor resistive domain first terminating region being electrically connected to said second semiconductor piezoresistive domain second terminating region, and with said third semiconductor resistive domain electrically connecting said second semiconductor piezoresistive domain second terminating region to said first semiconductor piezoresistive domain second terminating region through said second semiconductor resistive domain by said third semiconductor resistive domain second terminating region being electrically connected to said second semiconductor resistive domain second terminating region.

Claim 22

The system of claim 20 wherein there is further provided a second primarily resistive domain adjacent to said major surface and supported by said structure, said second primarily resistive domain having first and second terminating regions, said second primarily resistive domain having a temperature coefficient of resistance of a magnitude substantially less than said first magnitude, said second primarily resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, and said second primarily resistive domain being a component part of said stress sensing circuit with said second primarily resistive domain first terminating region being electrically connected to said first semiconductor piezoresistive domain second terminating region.

Claim 23

The system of claim 21 wherein: third and fourth semiconductor piezoresistive domains are further provided each in said semiconductor material at a said selected location extending at least in part into said diaphragm, and each provided adjacent to said major surface, said third semiconductor piezoresistive domain having first and second terminating regions and said fourth semiconductor piezoresistive domain having first and second terminating regions, said third and fourth semiconductor piezoresistive domains each having substantially said first distribution of dopant atoms therein leading to each of said third and fourth semiconductor piezoresistive domains being of said second conductivity type and each having a temperature coefficient of resistance of substantially said first magnitude which is effective in said first magnitude direction, said third and fourth semiconductor piezoresistive domains being component parts of said stress sensing circuit with said third semiconductor piezoresistive domain first terminating region being electrically connected to said first semiconductor piezoresistive domain first terminating region, and with said fourth semiconductor piezoresistive domain first terminating region being electrically connected to said second semiconductor piezoresistive domain first terminating region, and with said first semiconductor piezoresistive domain second terminating region being electrically connected to said second semiconductor piezoresistive domain second terminating region, and with said third semiconductor piezoresistive domain second terminating region being electrically connected to said fourth semiconductor piezoresistive domain second terminating region; and a third primarily resistive domain adjacent to said major surface and supported by said structure, said third primarily resistive domain having first and second terminating regions, said third primarily resistive domain having first and second terminating regions, said third primarily resistive domain having a temperature coefficient of resistance of a magnitude substantially less than said first magnitude, said third primarily resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, and said third primarily resistive domain being a component part of said stress sensing circuit with said third primarily resistive domain first terminating region being electrically connected to said third semiconductor piezoresistive domain second terminating region.

Claim 24

The system of claim 22 wherein said third primarily resistive domain second terminating region is electrically connected to a first terminal means adapted for electrical connection to a first source of voltage, and wherein said second primarily resistive domain second terminating region is electrically connected to said second semiconductor resistive domain second terminating region, said second semiconductor resistive domain second terminating region being electrically connected to a second terminal means adapted for electrical connection to a second source of voltage.

Claim 25

The system of claim 2 wherein there is further provided a first operational amplifier in and on said semiconductor material in said structure adjacent to in part, and adjoining in part, said major surface, said first operational amplifier having a first input region which is capable of a high circuit impedance and having an output region which is capable of a low circuit impedance, said first operational amplifier being capable of providing a large magnitude gain in signals appearing at said first operational amplifier output region over corresponding signals appearing at said first operational amplifier first input region, said first operational amplifier being electrically connected to first and second terminal means adapted for electrical connection to first and second sources of voltage, respectively, said first operational amplifier being part of said signal processing circuit with a selected one of said first semiconductor resistive domain and said first primarily resistive domain first terminating regions being electrically connected to said first operational amplifier first input region.

Claim 26

The system of claim 24 wherein a selected one of said first semiconductor resistive domain and said first primarily resistive domain second terminating regions is directly electrically connected to said first operational amplifier output region.

Claim 27

The system of claim 25 wherein: said first operational amplifier has a second input region which is capable of a high circuit impedance, and with said first operational amplifier being capable of providing a large magnitude gain in an opposite magnitude direction for signals appearing at said first operational amplifier output region over corresponding signals appearing at said first operational amplifier first input region, and with said first operational amplifier being capable of providing a large magnitude gain in an identical magnitude direction for signals appearing at said first operational amplifier output region over corresponding signals appearing at said first operational amplifier second input region, said first operational amplifier second input region serving as said signal processing circuit first input region and said first semiconductor piezoresistive domain first terminating region serving as said stress sensing circuit first output region; and a second operational amplifier is further provided in and on said semiconductor material in said structure adjacent to in part, and adjoining in part, said major surface, said second operational amplifier having a first input region which is capable of a high circuit impedance, a second input region which is capable of a high circuit impedance, and an output region which is capable of a low circuit impedance, said second operational amplifier being capable of providing a large magnitude gain in an opposite magnitude direction for signals appearing at said second operational amplifier output region over corresponding signals appearing at said second operational amplifier first input region, said second operational amplifier being capable of providing a large magnitude gain in an identical magnitude direction for signals appearing at said second operational amplifier output region over corresponding signals appearing at said second operational amplifier second input region, said second operational amplifier being electrically connected to third and fourth terminal means adapted for electrical connection to third and fourth sources of voltage, respectively, said second operational amplifier being a part of said signal processing circuit with that one remaining of said first semiconductor resistive domain and said first primarily resistive domain second terminating regions, after selection of one thereof to be directly electrically connected to said first operational amplifier output region, as aforesaid, being electrically connected to said second operational amplifier first input region, and with each of said first semiconductor resistive domain and said first primarily resistive domain first terminating regions being electrically connected to said first operational amplifier first input region, and with said second semiconductor piezoresistive domain first terminating region serving as a second output region of said stress sensing circuit and being electrically connected to said second operational amplifier second input region serving as a second input region of said signal processing circuit, and with said first semiconductor piezoresistive domain second terminating region being electrically connected to said second semiconductor piezoresistive domain second terminating region.

Claim 28

The system of claim 26 or 11 wherein there is further provided a second primarily resistive domain adjacent to said major surface and supported by said structure, said second primarily resistive domain having first and second terminating regions, said second primarily resistive domain being substantially free of effects in electrical behavior in response to stress applied to said diaphragm, and said second primarily resistive domain being a component part of said signal processing circuit with said first semiconductor resistive domain and said first primarily resistive domain first terminating regions each being electrically connected to said first operational amplifier first input region through said second primarily resistive domain by having said second primarily resistive domain first terminating region directly electrically connected to said first operational amplifier first input region and by having said second primarily resistive domain second terminating region directly electrically connected to each of said first semiconductor resistive domain and said first primarily resistive domain first terminating regions.

Claim 29

The system of claim 26 or 11 wherein: second, third, fourth and fifth primarily resistive domains are further provided each adjacent to said major surface and supported by said structure, each of said second, third, fourth and fifth primarily resistive domains having first and second terminating regions, each of said second, third, fourth and fifth primarily resistive domains being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, with said second, third, fourth and fifth primarily resistive domains being component parts of said signal processing circuit, said second primarily resistive domain first terminating region being electrically connected to said first operational amplifier first input region, said second primarily resistive domain second terminating region being electrically connected to said third primarily resistive domain second terminating region and to said fourth primarily resistive domain first terminating region, said third primarily resistive domain first terminating region being electrically connected to said second operational amplifier first input region; and a second semiconductor resistive domain is further provided in said semiconductor material at a said selected location and adjacent to said major surface, said second semiconductor resistive domain having first and second terminating regions, said second semiconductor resistive domain having substantially said first distribution of dopant atoms therein leading to said second semiconductor resistive domain being of said second conductivity type and having a temperature coefficient of resistance of substantially said first magnitude which is effective in said first magnitude direction, said second semiconductor resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, said second semiconductor resistive domain being a component part of said signal processing circuit with said second semiconductor resistive domain second terminating region being electrically connected to said fourth primarily resistive domain second terminating region and to said fifth primarily resistive domain first terminating region, and with said second semiconductor resistive domain first terminating region and said fifth primarily resistive domain second terminating region being electrically connected to fifth and sixth terminal means, respectively, adapted for electrical connection to fifth and sixth sources of voltage, respectively.

Claim 30

The system of claim 28 wherein there is further provided sixth primarily resistive domain adjacent to said major surface and supported by said structure, said sixth primarily resistive domain having first and second terminating regions, said sixth primarily resistive domain having a temperature coefficient of resistance of a magnitude substantially less than said first magnitude, said sixth primarily resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, said sixth primarily resistive domain being a component part of said stress sensing circuit and with said sixth primarily resistive domain first terminating region being electrically connected to said first semiconductor piezoresistive domain second terminating region, and with said sixth primarily resistive domain second terminating region being electrically connected to a selected one of said fifth and sixth terminal means.

Claim 31

The system of claim 26 or 11 wherein there is provided an output transformation means in and on said semiconductor material in said structure adjacent to in part, and adjoining in part, said major surface, said output transformation means having first and second input regions and an output region, said output transformation means being capable of providing signals at said output transformation means output region corresponding in an opposite magnitude direction to signals appearing at said output transformation means first input region and said output transformation means being capable of providing signals at said output transformation means output region identical in magnitude direction to signals appearing at said output transformation means second input region, said output transformation means being electrically connected to fifth and sixth terminal means adapted for electrical connection to fifth and sixth sources of voltage, respectively, said output transformation means being part of said signal processing circuit with said first operational amplifier output region being electrically connected to said output transformation means first input region and said second operational amplifier output region being electrically connected to said output transformation means second input region, said output transformation means output region serving as an output region for said signal processing circuit.

Claim 32

The system of claim 30 wherein: a third operational amplifier is further provided in and on said semiconductor material in said structure adjacent to in part, and adjoining in part, said major surface as a part of said output transformation means, said third operational amplifier having a first input region which is capable of a high circuit impedance, a second input region which is capable of a high circuit impedance, and an output region which is capable of a low circuit impedance, said third operational amplifier being capable of providing a large magnitude gain in an opposite magnitude direction for signals appearing at said third operational amplifier output region over corresponding signals appearing at said third operational amplifier first input region, said third operational amplifier being capable of providing a large magnitude gain in an identical magnitude direction for signals appearing at said third operational amplifier output region over corresponding signals appearing at said third operational amplifier second input region, said third operational amplifier being electrically connected to fifth and sixth terminal means adapted for electrical connection to fifth and sixth sources of voltage, respectively, said third operational amplifier output region serving as said output transformation means output region; and second, third, fourth, fifth, sixth, seventh and eighth primarily resistive domains are further provided each adjacent to said major surface and supported by said structure as a part of said output transformation means, said second, third, fourth, fifth, sixth, seventh and eighth primarily resistive domains each having first and second terminating regions, each of said second, third, fourth, fifth, sixth, seventh and eighth primarily resistive domains being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, with said second terminating region of said second, fourth and fifth primarily resistive domains being electrically connected to one another and to said third primarily resistive domain first terminating region, said second primarily resistive domain first terminating region being electrically connected to both said sixth primarily resistive domain second terminating region and to said first operational amplifier output region, said fourth primarily resistive domain first terminating region being electrically connected to said seventh primarily resistive domain second terminating region and to said second operational amplifier output region, said fifth primarily resistive domain first terminating region being electrically connected to said seventh primarily resistive domain first terminating region and to said third operational amplifier second input region, said sixth primarily resistive domain first terminating region being electrically connected to said eighth primarily resistive domain first terminating region and to said third operational amplifier first input region, and said eighth primarily resistive domain second terminating region being electrically connected to said third operational amplifier output region, said second primarily resistive domain first terminating region and said sixth primarily resistive domain second terminating region together serving as said output transformation means first input region and said fourth primarily resistive domain first terminating region and said seventh primarily resistive domain second terminating region together serving as said output transformation means second input region.

Claim 33

The system of claim 30 wherein: a third operational amplifier is further provided in and on said semiconductor material in said structure adjacent to in part, and adjoining in part, said major surface as a part of said output transformation means, said third operational amplifier having a first input region which is capable of a high circuit impedance, a second input region which is capable of a high circuit impedance, and an output region which is capable of a low circuit impedance, said third operational amplifier being capable of providing a large magnitude gain in an opposite magnitude direction for signals appearing at said third operational amplifier output region over corresponding signals appearing at said third operational amplifier first input region, said third operational amplifier being capable of providing a large magnitude gain in an identical magnitude direction for signals appearing at said third operational amplifier output region over corresponding signals appearing at said third operational amplifier second input region, said third operational amplifier being electrically connected to fifth and sixth terminal means adapted for electrical connection to fifth and sixth sources of voltage, respectively, said third operational amplifier output region serving as said output transformation means output region; and second, third and fourth primarily resistive domains are further provided each adjacent to said major surface and supported by said structure as a part of said output transformation means, said second, third and fourth primarily resistive domains having first and second terminating regions, each of said second, third and fourth primarily resistive domains being substantially free of effects in electrically behavior in response to stresses applied to said diaphragm, with said second primarily resistive means second terminating region being electrically connected to said first operational amplifier output region, said second primarily resistive means first terminating region being electrically connected to said fourth primarily resistive domain first terminating region and to said third operational amplifier first input region, said third primarily resistive domain second terminating region being electrically connected to said second operational amplifier output region, said third primarily resistive domain first terminating region being electrically connected to said third operational amplifier second input region, and said fourth primarily resistive domain second terminating region being electrically connected to said third operational amplifier output region, said second primarily resistive domain second terminating region serving as said output transformation means first input region and said third primarily resistive domain second terminating region serving as said output transformation means second input region.

Claim 34

The system of claim 32 wherein a voltage bias means is further provided adjacent to said major surface and supported by said structure as a part of said output transformation means, said voltage bias means having an output region, said voltage bias means being capable of providing a constant polarity voltage of a selected magnitude at said voltage bias means output region, said voltage bias means being electrically connected to a seventh terminal means adapted for electrical connection to a seventh source of voltage, said voltage bias means output region being electrically connected to a selected one of said third operational amplifier first and second input regions.

Claim 35

The system of claim 32 wherein a linearity circuit means is further provided adjacent to said major surface and supported by said structure as a part of said output transformation means, said linearity circuit means having first and second terminating regions, said linearity circuit means containing at least one diode means as a circuit component therein, said linearity circuit means first terminating region being electrically connected to said third operational amplifier first input region, said linearity circuit means second terminating region being electrically connected to a said output region of a selected one of said operational amplifiers.

Claim 36

The system of claim 26 or 11 wherein there is further provided an operational amplifier feedback resistive domain adjacent to said major surface and supported by said structure, said operational amplifier feedback resistive domain having first and second terminating regions, said operational amplifier feedback resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, said operational amplifier feedback resistive domain being a component part of said signal processing circuit with said operational amplifier feedback resistive domain first terminating region being electrically connected to said second operational amplifier first input region and said operational amplifier feedback resistive domain second terminating region being directly electrically connected to said second operational amplifier output region.

Claim 37

The system of claim 35 wherein said first primarily resistive domain has a construction selected from first and second constructions with said first construction being in said semiconductor material at a said selected location, and so supported by said structure, as aforesaid, and with said second construction being as a thin film outside said semiconductor material but still supported by said structure as aforesaid.

Claim 38

The system of claim 25 wherein there is further provided a second primarily resistive domain adjacent to said major surface and supported by said structure, said second resistive domain having first and second terminating regions, said second primarily resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, and said second primarily resistive domain being a component part of said signal processing circuit with said first semiconductor resistive domain and said first primarily resistive domain first terminating regions each being electrically connected to said first operational amplifier first input region through said second primarily resistive domain by having said second primarily resistive domain first terminating region directly electrically connected to said first operational amplifier first input region and by having said second primarily resistive domain second terminating region directly electrically connected to each of said first semiconductor resistive domain and said first primarily resistive domain first terminating regions.

Claim 39

The system of claim 24 wherein said first operational amplifier has a second input region which is capable of a high circuit impedance, and with said first operational amplifier being capable of providing a large magnitude gain in an opposite magnitude direction for signals appearing at said first operational amplifier output region over corresponding signals appearing at said first operational amplifier first input region, and with said first operational amplifier being capable of providing a large magnitude gain in an identical magnitude direction for signals appearing at said first operational amplifier output region over corresponding signals appearing at said first operational amplifier second input region, said first operational amplifier second input region serving as said signal processing circuit first input region and said first semiconductor piezoresistive domain first terminating region serving as said stress sensing circuit first output region.

Claim 40

The system of claim 2 wherein said first distribution of dopant atoms has a maximum concentration of between 10 17 atoms/cm 3 and 10 19 atoms/cm 3 .

Claim 41

The system of claim 1 wherein there is further provided a second primarily resistive domain adjacent to said major surface and supported by said structure, said second primarily resistive domain having first and second terminating regions, said second primarily resistive domain having a temperature coefficient of resistance of a magnitude substantially less than said first magnitude, said second primarily resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, and said second primarily resistive domain being a component part of said stress sensing circuit with said second primarily resistive domain first terminating region being electrically connected to said first semiconductor piezoresistive domain second terminating region.

Claim 42

The system of claim 40 wherein said second primarily resistive domain second terminating region is electrically connected to a first terminal means adapted for electrical connection to a first source of voltage.

Claim 43

The system of claim 40 wherein at least one of said first and second primarily resistive domains has a construction selected from first and second constructions with said first construction being in said semiconductor material at a said selected location, and so supported by said structure, as aforesaid, and with said second construction being as a thin film outside said semiconductor material but supported by said structure as aforesaid.

Claim 44

The system of claim 1 wherein there is further provided a second semiconductor resistive domain in said semiconductor material at a said selected location and adjacent to said major surface, said second semiconductor resistive domain having first and second terminating regions, said second semiconductor resistive domain having substantially said first distribution of atoms therein leading to said second semiconductor resistive domain being of said second conductivity type and having a temperature coefficient of resistance of substantially said first magnitude which is effective in said first magnitude direction, second semiconductor resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, said second semiconductor resistive domain being a component part of said stress sensing circuit with said second semiconductor resistive domain first terminating region being electrically connected to said first semiconductor piezoresistive domain second terminating region.

Claim 45

The system of claim 43 wherein there is further provided a second primarily resistive domain adjacent to said major surface and supported by said structure, said second primarily resistive domain having first and second terminating regions, said second primarily resistive domain having a temperature coefficient of resistance of a magnitude substantially less than said first magnitude, said second primarily resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, and said second primarily resistive domain being a component part of said stress sensing circuit with said second primarily resistive domain first terminating region being electrically connected to said first semiconductor piezoresistive domain second terminating region.

Claim 46

The system of claim 1 wherein there is further provided a first operational amplifier in and on said semiconductor material in said structure adjacent to in part, and adjoining in part, said major surface, said first operational amplifier having a first input region which is capable of a high circuit impedance and having an output region which is capable of a low circuit impedance, said first operational amplifier being capable of providing a large magnitude gain in signals appearing at said first operational amplifier output region over corresponding signals appearing at said first operational amplifier first input region, said first operational amplifier being electrically connected to first and second terminal means adapted for electrical connection to first and second sources of voltage, respectively, said first operational amplifier being part of said signal processing circuit with a selected one of said first semiconductor resistive domain and said first primarily resistive domain first terminating regions being electrically connected to said first operational amplifier first input region.

Claim 47

The system of claim 45 wherein a selected one of said first semiconductor resistive domain and said first primarily resistive domain second terminating regions is directly electrically connected to said first operational amplifier output region.

Claim 48

The system of claim 46 wherein said first distribution of dopant atoms has a maximum concentration of between 10 17 atoms/cm 3 and 10 19 atoms/cm 3 .

Claim 49

The system of claim 46 wherein there is further provided a second primarily resistive domain adjacent to said major surface and supported by said structure, said second primarily resistive domain having first and second terminating regions, said second primarily resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, and said second primarily resistive domain being a component part of said signal processing circuit with said first semiconductor resistive domain and said first primarily resistive domain first terminating regions each being electrically connected to said first operational amplifier first input region through said second primarily resistive domain by having said second primarily resistive domain first terminating region directly electrically connected to said first operational amplifier first input region and by having said second primarily resistive domain second terminating region directly electrically connected to each of said first semiconductor resistive domain and said first primarily resistive domain first terminating regions.

Claim 50

The system of claim 45 wherein said first operational amplifier has a second input region which is capable of a high circuit impedance, and with said first operational amplifier being capable of providing a large magnitude gain in an opposite magnitude direction for signals appearing at said first operational amplifier output region over corresponding signals appearing at said first operational amplifier first input region, and with said first operational amplifier being capable of providing a large magnitude gain in an identical magnitude direction for signals appearing at said first operational amplifier output region over corresponding signals appearing at said first operational amplifier second input region, said first operational amplifier second input region serving as said signal processing circuit first input region and said first semiconductor piezoresistive domain first terminating region serving as said stress sensing circuit first output region.

Claim 51

The system of claim 45 wherein said first distribution of dopant atoms has a maximum concentration of between 10 17 atoms/cm 3 and 10 19 atoms/cm 3 .

Claim 52

The system of claim 1 wherein said first distribution of dopant atoms has a maximum concentration of between 10 17 atoms/cm 3 and 10 19 atoms/cm 3 .

Claim 53

A stress transducing system supported in and on a semiconductor material stress sensing structure having structural portions including substantially a diaphragm and a constraint for constraining said diaphragm at peripheral portions thereof, with said structure having a major surface bounding semiconductor material, said semiconductor material being of a first conductivity tape except in selected locations thereof, said major surface being common to both said diaphragm and said constraint, said stress transducing system comprising: a first semiconductor piezoresistive domain in said semiconductor material at a said selected location extending at least in part into said diaphragm, and with said domain being adjacent to said major surface, said first semiconductor piezoresistive domain having first and second terminating regions, said first semiconductor piezoresistive domain having therein a first distribution of dopant atoms with depth into said semiconductor material away from said major surface which leads to said first semiconductor piezoresistive domain being of a second conductivity type and having a temperature coefficient of resistance of a first magnitude which is effective in a first magnitude direction, said first semiconductor piezoresistive domain being a component part of a stress sensing circuit which is capable of providing a stress sensing circuit first output signal at a stress sensing circuit first output region of a magnitude varying in correspondence to changes in magnitude of stress applied to said diaphragm, said stress sensing circuit first output signal varying with such stess, as aforesaid, in a manner characteristic of said first semiconductor piezoresistive domain and remaining portions of said structure to thereby establish a stress sensing characteristic which characteristic also depends upon temperatures occurring in said structure; a first semiconductor resistive domain in said semiconductor material at a said selected location and adjacent to said major surface, said first semiconductor resistive domain having first and second terminating regions, said first semiconductor resistive domain having substantially said first distribution of dopant atoms therein leading to said first semiconductor resistive domain being of said second conductivity type and having a temperature coefficient of resistance of substantially said first magnitude which is effective in said first magnitude direction, said first semiconductor resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, said first semiconductor resistive domain being a component part of a signal processing circuit having a signal processing circuit first input region which is electrically connected to said stress sensing circuit first output region and having a signal processing circuit output region, said signal processing circuit being capable of providing a stress transducer system output signal at said signal processing circuit output region which is a version of said stress sensing circuit first output signal but as compensated to be substantially free of effects of said temperature dependence in said stress sensing circuit characteristic; and a first operational amplifier in and on said semiconductor material in said structure adjacent to in part, and adjoining in part, said major surface, said first operational amplifier having a first input region which is capable of a high circuit impedance and having an output region which is capable of a low circuit impedance, said first operational amplifier being capable of providing a large magnitude gain in signals appearing at said first operational amplifier output region over corresponding signals appearing at said first operational amplifier first input region, said first operational amplifier being electrically connected to first and second terminal means adapted for electrical connection to first and second sources of voltage, respectively, said first operational amplifier being part of said signal processing circuit with said first semiconductor resistive domain first terminating region being electrically connected to said first operational amplifier first input region.

Claim 54

A stress transducing system supported in and on a semiconductor material stress sensing structure having structural portions including substantially a diaphragm and a constraint for constraining said diaphragm at peripheral portions thereof, with said structure having a major surface bounding semiconductor material, said semiconductor material being of a first conductivity tape except in selected locations thereof, said major surface being common to both said diaphragm and said constraint, said stress transducing system comprising: a first semiconductor piezoresistive domain in said semiconductor material at a said selected location extending at least in part into said diaphragm, and with said domain being adjacent to said major surface, said first semiconductor piezoresistive domain having first and second terminating regions, said first semiconductor piezoresistive domain having therein a first distribution of dopant atoms with depth into said semiconductor material away from said major surface which leads to said first semiconductor piezoresistive domain being of a second conductivity type and having a temperature coefficient of resistance of a first magnitude which is effective in a first magnitude direction, said first semiconductor piezoresistive domain being a component part of a stress sensing circuit which is capable of providing a stress sensing circuit first output signal at a stress sensing circuit first output region of a magnitude varying in correspondence to changes in magnitude of stress applied to said diaphragm, said stress sensing circuit first output signal varying with such stess, as aforesaid, in a manner characteristic of said first semiconductor piezoresistive domain and remaining portions of said structure to thereby establish a stress sensing characteristic which characteristic also depends upon temperatures occurring in said structure; a first semiconductor resistive domain in said semiconductor material at a said selected location and adjacent to said major surface, said first semiconductor resistive domain having first and second terminating regions, said first semiconductor resistive domain having substantially said first distribution of dopant atoms therein leading to said first semiconductor resistive domain being of said second conductivity type and having a temperature coefficient of resistance of substantially said first magnitude which is effective in said first magnitude direction, said first semiconductor resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, said first semiconductor resistive domain being a component part of a signal processing circuit having a signal processing circuit first input region which is electrically connected to said stress sensing circuit first output region and having a signal processing circuit output region, said signal processing circuit being capable of providing a stress transducer system output signal at said signal processing circuit output region which is a version of said stress sensing circuit first output signal but as compensated to be substantially free of effects of said temperature dependence in said stress sensing circuit characteristic; and a first operational amplifier in and on said semiconductor material in said structure adjacent to in part, and adjoining in part, said major surface, said first operational amplifier having a first input region which is capable of a high circuit impedance and having an output region which is capable of a low circuit impedance, said first operational amplifier being capable of providing a large magnitude gain in signals appearing at said first operational amplifier output region over corresponding signals appearing at said first operational amplifier first input region, said first operational amplifier being electrically connected to first and second terminal means adapted for electrical connection to first and second sources of voltage, respectively, said first operational amplifier being part of said signal processing circuit with said first semiconductor resistive domain first terminating region being electrically connected to said first operational amplifier first input region.

Claim 55

The system of claim 52 wherein there is further provided a second semiconductor piezoresistive domain in said semiconductor material at a said selected location extending at least in part into said diaphragm, and provided adjacent to said major surface, said second semiconductor piezoresistive domain having first and second terminating regions, said second semiconductor piezoresistive domain having substantially said first distribution of dopant atoms therein leading to said second semiconductor piezoresistive domain being of said second conductivity type and having a temperature coefficient of resistance of substantially said first magnitude which is effective in said first magnitude direction, said second semiconductor piezoresistive domain being a component part of said stress sensing circuit with a selected one of said second semiconductor piezoresistive domain first and second terminating regions being electrically connected to a selected one of said first semiconductor piezoresistive domain first and second terminating regions.

Claim 56

The system of claim 53 wherein there is further provided third and fourth semiconductor piezoresistive domains each in said semiconductor material at a said selected location extending at least in part into said diaphragm, and each provided adjacent to said major surface, said third semiconductor piezoresistive domain having first and second terminating regions and said fourth semiconductor piezoresistive domain having first and second terminating regions, said third and fourth semiconductor piezoresistive domains each having substantially said first distribution of dopant atoms therein leading to each of said third and fourth semiconductor piezoresistive domains being of said second conductivity type and each having a temperature coefficient of resistance of substantially said first magnitude which is effective in said first magnitude direction, said third and fourth semiconductor piezoresistive domains being component parts of said stress sensing circuit with said third semiconductor piezoresistive domain first terminating region being electrically connected to said first semiconductor piezoresistive domain first terminating region, and with said fourth semiconductor piezoresistive domain first terminating region being electrically connected to said second semiconductor piezoresistive domain first terminating region, and with said first semiconductor piezoresistive domain second terminating region being electrically connected to said second semiconductor piezoresistive domain second terminating region, and with said third semiconductor piezoresistive domain second terminating region being electrically connected to said fourth semiconductor piezoresistive domain second terminating region.

Claim 57

The system of claim 52 wherein said first distribution of dopant atoms has a maximum concentration of between 10 17 atoms/cm 3 and 10 19 atoms/cm 3 .

Claim 58

The system of claim 52 wherein said first operational amplifier has a second input region which is capable of a high circuit impedance, and with said first operational amplifier being capable of providing a large magnitude gain in an opposite magnitude direction for signals appearing at said first operational amplifier output region over corresponding signals appearing at said first operational amplifier first input, region and with said first operational amplifier being capable of providing a large magnitude gain in an identical magnitude direction for signals appearing at said first operational amplifier output region over corresponding signals appearing at said first operational amplifier second input region, said first operational amplifier second input region serving as said signal processing circuit first input region and said first semiconductor piezoresistive domain first terminating region serving as said stress sensing circuit first output region, said first semiconductor resistive domain second terminating region being electrically connected to said first operational amplifier output region.

Claim 59

The system of claim 56 wherein said first distribution of dopant atoms has a maximum concentration of between 10 17 atoms/cm 3 and 10 19 atoms/cm 3 .

Claim 60

A stress transducing system supported in and on a semiconductor material stress sensing structure having structural portions including substantially a diaphragm and a constraint for constraining said diaphragm at peripheral portions thereof, with said structure having a major surface bounding semiconductor material, said semiconductor material being of a first conductivity type except in selected locations thereof, said major surface being common to both said diaphragm and said constraint, said stress transducing system comprising: first, second, third and fourth semiconductor piezoresistive domains each in said semiconductor material at a said selected location extending at least in part into said diaphragm, and each provided adjacent to said major surface, said first, second, third and fourth semiconductor piezoresistive domains each having first and second terminating regions, said first, second, third and fourth semiconductor piezoresistive domains each having therein substantially a first distribution of dopant atoms which leads to each of said first, second, third and fourth semiconductor piezoresistive domains being of a second conductivity type and each having a temperature coefficient of resistance of substantially a first magnitude which is effective in a first magnitude direction, said first, second, third and fourth semiconductor piezoresistive domains being component parts of a stress sensing circuit which is capable of providing a stress sensing circuit first output signal at a stress sensing circuit first output region of a magnitude varying in correspondence to changes in magnitude of stress applied to said diaphragm, said stress sensing circuit first output signal varying with such stress, as aforesaid, in a manner characteristic of said first, second, third and fourth semiconductor piezoresistive domains and remaining portions of said structure to thereby establish a stress sensing characteristic which characteristic also depends upon temperatures occurring in said structure, said first semiconductor piezoresistive domain second terminating region and said second semiconductor piezoresistive domain second terminating region being electrically connected to one another, said first semiconductor piezoresistive domain first terminating region being electrically connected to said third semiconductor piezoresistive domain first terminating region, and said second semiconductor piezoresistive domain first terminating region being electrically connected to said fourth semiconductor piezoresistive domain first terminating region; and a first primarily resistive domain adjacent to said major surface and supported by said structure, said first primarily resistive domain having first and second terminating regions, said first primarily resistive domain having a temperature coefficient of resistance of a magnitude substantially less than said first magnitude, said first primarily resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, said first primarily resistive domain being part of said stress sensing circuit with said first primarily resistive domain first terminating region being electrically connected to said first and second semiconductor piezoresistive domain second terminating regions and with said first primarily resistive domain second terminating region being electrically connected to a first terminal means adapted for electrical connection to a first source of voltage, and with said third and fourth semiconductor piezoresistive domains second terminating regions being electrically connected to a second terminal means adapted for electrical connection to a second source of voltage.

Claim 61

A stress transducing system supported in and on a semiconductor material stress sensing structure having structural portions including substantially a diaphragm and a constraint for constraining said diaphragm at peripheral portions thereof, with said structure having a major surface bounding semiconductor material, said semiconductor material being of a first conductivity type except in selected locations thereof, said major surface being common to both said diaphragm and said constraint, said stress transducing system comprising: first, second, third and fourth semiconductor piezoresistive domains each in said semiconductor material at a said selected location extending at least in part into said diaphragm, and each provided adjacent to said major surface, said first, second, third and fourth semiconductor piezoresistive domains each having first and second terminating regions, said first, second, third and fourth semiconductor piezoresistive domains each having therein substantially a first distribution of dopant atoms which leads to each of said first, second, third and fourth semiconductor piezoresistive domains being of a second conductivity type and each having a temperature coefficient of resistance of substantially a first magnitude which is effective in a first magnitude direction, said first, second, third and fourth semiconductor piezoresistive domains being component parts of a stress sensing circuit which is capable of providing a stress sensing circuit first output signal at a stress sensing circuit first output region of a magnitude varying in correspondence to changes in magnitude of stress applied to said diaphragm, said stress sensing circuit first output signal varying with such stress, as aforesaid, in a manner characteristic of said first, second, third and fourth semiconductor piezoresistive domains and remaining portions of said structure to thereby establish a stress sensing characteristic which characteristic also depends upon temperatures occurring in said structure, said first semiconductor piezoresistive domain second terminating region and said second semiconductor piezoresistive domain second terminating region being electrically connected to one another, said first semiconductor piezoresistive domain first terminating region being electrically connected to said third semiconductor piezoresistive domain first terminating region, and said second semiconductor piezoresistive domain first terminating region being electrically connected to said fourth semiconductor piezoresistive domain first terminating region; and a first primarily resistive domain adjacent to said major surface and supported by said structure, said first primarily resistive domain having first and second terminating regions, said first primarily resistive domain having a temperature coefficient of resistance of a magnitude substantially less than said first magnitude, said first primarily resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, said first primarily resistive domain being part of said stress sensing circuit with said first primarily resistive domain first terminating region being electrically connected to said first and second semiconductor piezoresistive domain second terminating regions and with said first primarily resistive domain second terminating region being electrically connected to a first terminal means adapted for electrical connection to a first source of voltage, and with said third and fourth semiconductor piezoresistive domains second terminating regions being electrically connected to a second terminal means adapted for electrical connection to a second source of voltage.

Claim 62

A stress transducing system supported in and on a semiconductor material stress sensing structure having structural portions including substantially a diaphragm and a constraint for constraining said diaphragm at peripheral portions thereof, with said structure having a major surface bounding semiconductor material, said semiconductor material being of a first conductivity type except in selected locations thereof, said major surface being common to both said diaphragm and said constraint, said stress transducing system comprising: first, second, third and fourth semiconductor piezoresistive domains each in said semiconductor material at a said selected location extending at least in part into said diaphragm, and each provided adjacent to said major surface, said first, second, third and fourth semiconductor piezoresistive domains each having first and second terminating regions, said first, second, third and fourth semiconductor piezoresistive domains each having therein substantially a first distribution of dopant atoms which leads to each of said first, second, third and fourth semiconductor piezoresistive domains being of a second conductivity type and each having a temperature coefficient of resistance of substantially a first magnitude which is effective in a first magnitude direction, said first, second, third and fourth semiconductor piezoresistive domains being component parts of a stress sensing circuit which is capable of providing a stress sensing circuit first output signal at a stress sensing circuit first output region of a magnitude varying in correspondence to changes in magnitude of stress applied to said diaphragm, said stress sensing circuit first output signal varying with such stress, as aforesaid, in a manner characteristic of said first, second, third and fourth semiconductor piezoresistive domains and remaining portions of said structure to thereby establish a stress sensing characteristic which characteristic also depends upon temperatures occurring in said structure, said first semiconductor piezoresistive domain second terminating region and said second semiconductor piezoresistive domain second terminating region being electrically connected to one another, said first semiconductor piezoresistive domain first terminating region being electrically connected to said third semiconductor piezoresistive domain first terminating region, and said second semiconductor piezoresistive domain first terminating region being electrically connected to said fourth semiconductor piezoresistive domain first terminating region; first and second semiconductor resistive domains each in said semiconductor material at a said selected location and adjacent to said major surface, said first semiconductor resistive domain having first and second terminating regions and said second semiconductor resistive domain having first and second terminating regions, said first and second semiconductor resistive domains each having substantially said first distribution of dopant atoms therein leading to said first and second semiconductor resistive domains each being of said second conductivity type and each having a temperature coefficient of resistance of substantially said first magnitude which is effective in said first magnitude direction, said first and second semiconductor resistive domains each being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, said first and second semiconductor resistive domains being part of said stress sensing circuit with said first semiconductor resistive domain first terminating region being electrically connected to said third semiconductor piezoresistive domain second terminating region, and with said second semiconductor resistive domain first terminating region being electrically connected to said fourth semiconductor piezoresistive domain second terminating region, and with said first and second semiconductor resistive domains second terminating regions being connected to one another and to a first terminal means adapted for electrical connection to a first source of voltage, and with said first and second semiconductor piezoresistive domains second terminating regions being electrically connected to a second terminal means adapted for electrical connection to a second source of voltage; and first and second primarily resistive domains each adjacent to said major surface and supported by said structure, said first primarily resistive domain having first and second terminating regions and said second primarily resistive domain having first and second terminating regions, each of said first and second primarily resistive domains having temperature coefficients of resistance of a magnitude substantially less than said first magnitude, each of said first and second primarily resistive domains being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, said first and second primarily resistive domains being part of said stress sensing circuit with said first primarily resistive domain first terminating region being electrically connected to said first semiconductor resistive domain first terminating region, and with said first primarily resistive domain second terminating region being electrically connected to said first semiconductor resistive domain second terminating region, and with said second primarily resistive domain first terminating region being electrically connected to said second semiconductor resistive domain first terminating region, and with said second primarily resistive domain second terminating region being electrically connected to said second semiconductor resistive domain second terminating region.

Claim 63

A stress transducing system supported in and on a semiconductor material stress sensing structure having structural portions including substantially a diaphragm and a constraint for constraining said diaphragm at peripheral portions thereof, with said structure having a major surface bounding semiconductor material, said semiconductor material being of a first conductivity type except in selected locations thereof, said major surface being common to both said diaphragm and said constraint, said stress transducing system comprising: first, second, third and fourth semiconductor piezoresistive domains each in said semiconductor material at a said selected location extending at least in part into said diaphragm, and each provided adjacent to said major surface, said first, second, third and fourth semiconductor piezoresistive domains each having first and second terminating regions, said first, second, third and fourth semiconductor piezoresistive domains each having therein substantially a first distribution of dopant atoms which leads to each of said first, second, third and fourth semiconductor piezoresistive domains being of a second conductivity type and each having a temperature coefficient of resistance of substantially a first magnitude which is effective in a first magnitude direction, said first, second, third and fourth semiconductor piezoresistive domains being component parts of a stress sensing circuit which is capable of providing a stress sensing circuit first output signal at a stress sensing circuit first output region of a magnitude varying in correspondence to changes in magnitude of stress applied to said diaphragm, said stress sensing circuit first output signal varying with such stress, as aforesaid, in a manner characteristic of said first, second, third and fourth semiconductor piezoresistive domains and remaining portions of said structure to thereby establish a stress sensing characteristic which characteristic also depends upon temperatures occurring in said structure, said first semiconductor piezoresistive domain second terminating region and said second semiconductor piezoresistive domain second terminating region being electrically connected to one another, said first semiconductor piezoresistive domain first terminating region being electrically connected to said third semiconductor piezoresistive domain first terminating region, and said second semiconductor piezoresistive domain first terminating region being electrically connected to said fourth semiconductor piezoresistive domain first terminating region; first and second semiconductor resistive domains each in said semiconductor material at a said selected location and adjacent to said major surface, said first semiconductor resistive domain having first and second terminating regions and said second semiconductor resistive domain having first and second terminating regions, said first and second semiconductor resistive domains each having substantially said first distribution of dopant atoms therein leading to said first and second semiconductor resistive domains each being of said second conductivity type and each having a temperature coefficient of resistance of substantially said first magnitude which is effective in said first magnitude direction, said first and second semiconductor resistive domains each being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, said first and second semiconductor resistive domains being part of said stress sensing circuit with said first semiconductor resistive domain first terminating region being electrically connected to said third semiconductor piezoresistive domain second terminating region, and with said second semiconductor resistive domain first terminating region being electrically connected to said fourth semiconductor piezoresistive domain second terminating region, and with said first and second semiconductor resistive domains second terminating regions being connected to one another and to a first terminal means adapted for electrical connection to a first source of voltage, and with said first and second semiconductor piezoresistive domains second terminating regions being electrically connected to a second terminal means adapted for electrical connection to a second source of voltage; and first and second primarily resistive domains each adjacent to said major surface and supported by said structure, said first primarily resistive domain having first and second terminating regions and said second primarily resistive domain having first and second terminating regions, each of said first and second primarily resistive domains having temperature coefficients of resistance of a magnitude substantially less than said first magnitude, each of said first and second primarily resistive domains being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, said first and second primarily resistive domains being part of said stress sensing circuit with said first primarily resistive domain first terminating region being electrically connected to said first semiconductor resistive domain first terminating region, and with said first primarily resistive domain second terminating region being electrically connected to said first semiconductor resistive domain second terminating region, and with said second primarily resistive domain first terminating region being electrically connected to said second semiconductor resistive domain first terminating region, and with said second primarily resistive domain second terminating region being electrically connected to said second semiconductor resistive domain second terminating region.