Stress sensor apparatus

Claim 2

A semiconductor material stress sensor having structural portions including substantially a diaphragm and a constraint for constraining said diaphragm at peripheral portions thereof, said stress sensor comprising: a layer of semiconductor material of a first conductivity type except in selected regions thereof including a first selected region located at least in part in said diaphragm to serve as a piezoresistor, said first selected region being of a second conductivity type due substantially to a first dopant therein where said first selected region has therein a region of maximum concentration of said first dopant wherein a concentration of said first dopant occurs exceeding by at least a factor five that concentration occurring at a first boundary portion of a boundary defining said first selected region, said first boundary portion occurring at that part of said boundary having on one side thereof said maximum first dopant concentration region and having directly opposed on an opposite side thereof a first surface portion of said layer located in said diaphragm.

Claim 3

The apparatus of claim 1 wherein said first selected region intersects a second surface portion of said layer in said constraint and an ohmic contact is made to said first selected region at said second surface portion.

Claim 4

The apparatus in claim 1 wherein said layer is in two strata each having a different conductivity with that said strata having a higher conductivity also having said first selected region contained therein.

Claim 5

The apparatus of claim 2 wherein said first selected region intersects surface portions of said layer only in said constraint.

Claim 6

The apparatus of claim 4 wherein said layer is in a substantially crystalline relationship with a semiconductor material substrate which has a recess therein to provide said diaphragm.

Claim 7

The apparatus of claim 5 wherein said substrate is bonded to a low thermal expansion glass member.

Claim 8

A semiconductor material stress sensor having structural portions including substantially a diaphragm and a constraint for constraining said diaphragm at peripheral portions thereof, said stress sensor comprising: a layer of semiconductor material of a first conductivity type except in selected regions thereof including a first selected region, said first selected region (i) being confined to interior portions of said layer with respect to a first surface portion of said layer where both said interior portions and said first surface portion are in said diaphragm, and (ii) being of a second conductivity type and separated as aforesaid from remaining portions of said layer by a first semiconductor junction, said first selected region being of a second conductivity type due substantially to a first dopant therein which has a region of maximum first concentration in said first selected region spaced apart from at least a first portion of said semiconductor junction where said first portion of said semiconductor junction occurs between said first surface portion and said maximum dopant concentration region.

Claim 9

A semiconductor material stress sensor having structural portions including substantially a diaphragm and a constraint for constraining said diaphragm at peripheral portions thereof, said stress sensor comprising: a layer of semiconductor material of a first conductivity type except in selected regions thereof including a first selected region, said first selected region (i) being confined to interior portions of said layer with respect to a first surface portion of said layer where both said interior portions and said first surface portion are in said diaphragm, and (ii) being of a second conductivity type and separated as aforesaid from remaining portions of said layer by a first semiconductor junction, said first selected region being of a second conductivity type due substantially to a first dopant therein which has a region of maximum first concentration in said first selected region spaced apart from at least a first portion of said semiconductor junction where said first portion of said semiconductor junction occurs between said first surface portion and said maximum dopant concentration region.

Claim 10

The apparatus of claim 7 wherein said first selected region intersects a second surface portion of said layer in said constraint and an ohmic contact is made to said first selected region at said second surface portion.

Claim 11

The apparatus in claim 7 wherein said layer is in two strata each having a different conductivity with that said strata having a higher conductivity also have said first selected region contained therein.

Claim 12

The apparatus of claim 8 wherein said first selected region intersects surface portions of said layer only in said constraint.

Claim 13

The apparatus of claim 10 wherein said layer is in a substantially crystalline relationship with a semiconductor material substrate which has a recess therein to provide said diaphragm.

Claim 14

The apparatus of claim 11 wherein said substrate is bonded to a low thermal expansion glass member.

Claim 15

The apparatus of claim 4 wherein said factor exceeds twenty-five.

Claim 16

The apparatus of claim 7 wherein a concentration of said first dopant in said maximum first dopant concentration region exceeds by at least a factor of five that concentration of said first dopant occurring in said first selected region adjacent to said first portion of said semiconductor junction.

Claim 17

The apparatus of claim 14 wherein said factor exceeds twenty-five.