Abstract Bodies having conical structures with dimensions on the order of the wavelength of visible light are prepared by a specific process. This process involves the formation of a mask by depositing a material that forms the mask onto the body to be etched and choosing the mask material so that it does not substantially wet the surface of the body. The mask thus fabricated has hill-type formations where the spacings between these formations are of the order of the wavelength of visible light. An etchant that etches the mask at a specific rate relative to the underlying body is then used to perform the etching procedure. Exemplary bodies produced by the procedure include tungsten textured bodies that exhibit light emissivities significantly higher than those possessed by the corresponding untreated tungsten material.
A process for producing an article comprising the steps of forming a mask on the surface of a substrate and etching said substrate by anisotropic etching characterized in that said mask is formed by depositing onto said substrate a material that does not substantially wet said surface of said substrate, and wherein said etching produces a ratio of vertical etch rates of said substrate to said mask of greater than 1.
Claim 2
Dependent Claim
71 words
A process for producing an article comprising the steps of forming a mask on the surface of a substrate and etching said substrate by anisotropic etching characterized in that said mask is formed by depositing onto said substrate a material that does not substantially wet said surface of said substrate, and wherein said etching produces a ratio of vertical etch rates of said substrate to said mask of greater than 1.
Claim 3
Dependent Claim
12 words
The process of claim 1 wherein said ratio is greater than 3.
Claim 4
Dependent Claim
10 words
The process of claim 2 wherein said substrate comprises tungsten.
Claim 5
Dependent Claim
10 words
The process of claim 1 wherein said substrate comprises tungsten.
Claim 6
Dependent Claim
17 words
The process of claim 3 or 4 wherein said etching is performed employing a CF 4 environment.
Claim 7
Dependent Claim
19 words
The process of claim 1 wherein said substrate comprises a layer of tungsten and a layer of silicon oxide.
Claim 8
Dependent Claim
12 words
The process of claim 1 wherein said etching is reactive ion etching.
Claim 9
Dependent Claim
15 words
The process of claim 7 wherein said etching is performed in a CF 4 environment.
Claim 10
Dependent Claim
16 words
The process of claim 7 wherein said etching is performed in a CF 3 Br environment.
Claim 11
Dependent Claim
24 words
The process of claim 1 wherein said etching is reactive ion etching done sequentially in an environment of CHF 3 and CF 3 Br.
Claim 12
Dependent Claim
24 words
The process of claim 1 wherein said etching is reactive ion etching done sequentially in an environment of CHF 3 and CF 4 .
Claim 13
Dependent Claim
22 words
The process of either claim 10 or 11 wherein said substrate comprises a layer of tungsten and a layer of silicon oxide.