US4284689A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Light-absorbing materials
Assignee: AT&T Inc
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Filing: 1980-04-07
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Granted: 1981-08-18
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Expires: 2000-04-07
Abstract
Abstract Materials have been made that exhibit high absorption in the visible, near ultraviolet, and near infrared spectral region while simultaneously exhibiting low absorptivity in the thermal infrared. Exemplary of such materials is silicon which is etched in a reactive sputtering process in the presence of a sputterable material. Other materials exhibiting useful properties are produced by this method.
Inventors
- 👤 Harold G. Craighead
- 👤 Richard E. Howard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 22:24
CPC Classifications
F; F24; F24S; F24S70/00; F24S70/20; Y; Y02; Y02E; Y02E10/00; Y02E10/40; Y10; Y10S; Y10S126/00; Y10S126/907; Y10S126/908; Y10S428/00; Y10S428/913; Y10T; Y10T428/00; Y10T428/12; Y10T428/12472; Y10T428/12493; Y10T428/12528; Y10T428/12674; Y10T428/12681; Y10T428/12993; Y10T428/24; Y10T428/24355; Y10T428/26; Y10T428/261
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
102 words
A body with a channeled portion comprising a material forming said body that contains a multiplicity of open voids where the mean depth of said voids is at least 0.3 μm, where 20 to 80 percent of the volume of said channeled portion measured to said mean depth consists of voids, where the channel dimension of said voids is less than 3 μm and where the wall direction over 75 percent of the wall length within any localized area defined by a square 10 μm on side is within 20 degrees of the mean direction for said walls within said localized area.
Claim 2
Dependent Claim
102 words
A body with a channeled portion comprising a material forming said body that contains a multiplicity of open voids where the mean depth of said voids is at least 0.3 μm, where 20 to 80 percent of the volume of said channeled portion measured to said mean depth consists of voids, where the channel dimension of said voids is less than 3 μm and where the wall direction over 75 percent of the wall length within any localized area defined by a square 10 μm on side is within 20 degrees of the mean direction for said walls within said localized area.
Claim 3
Dependent Claim
11 words
The body of claim 1 wherein said material comprises a semiconductor.
Claim 4
Dependent Claim
10 words
The body of claim 2 wherein said material comprises silicon.
Claim 5
Dependent Claim
18 words
The body of claim 2 wherein said material is chosen from the group consisting of Ge and GaAs.
Claim 6
Dependent Claim
18 words
The body of claim 1 wherein said wall direction is within 10 degrees of said mean wall direction.
Claim 7
Dependent Claim
21 words
The body of claims 1, 2, 3, or 4 wherein said channel dimension of said voids is less than 1 μm.
Claim 8
Dependent Claim
11 words
The body of claim 1 wherein said structure comprises discrete holes.
Claim 9
Dependent Claim
10 words
The body of claim 1 wherein said structure comprises reticulations.
Claim 10
Dependent Claim
16 words
The body of claim 1 wherein said structure comprises a combination of discrete holes and reticulations.
Claim 11
Dependent Claim
15 words
The body of claim 1 including a metal surface in intimate contact with said material.
Claim 12
Dependent Claim
55 words
A process for fabrication of a body having voids comprising the steps of bringing a material into close proximity to a sputterable composition such that at least a portion of said sputterable composition is exposed, and sputtering from said sputterable composition to form in situ a mask on said material while anisotropically etching said material.
Claim 13
Dependent Claim
55 words
A process for fabrication of a body having voids comprising the steps of bringing a material into close proximity to a sputterable composition such that at least a portion of said sputterable composition is exposed, and sputtering from said sputterable composition to form in situ a mask on said material while anisotropically etching said material.
Claim 14
Dependent Claim
11 words
The process of claim 11 wherein said material comprises a semiconductor.
Claim 15
Dependent Claim
21 words
The process of claim 12 wherein said material comprises a member chosen from the group consisting of silicon, Ge and GaAs.
Claim 16
Dependent Claim
23 words
The process of either claim 11, 12, or 13 wherein said etching is produced using an environment comprising CCl 2 F 2 .
Claim 17
Dependent Claim
29 words
The process of claim 14 wherein said etching is produced using an environment comprising a mixture of O 2 , CCl 2 F 2 , and an inert gas.
Claim 18
Dependent Claim
19 words
The process of claim 15 wherein said inert gas is chosen from the group consisting of argon and helium.
Claim 19
Dependent Claim
23 words
The process of claim 11 wherein said sputterable material comprises a material chosen from the group consisting of aluminum, magnesium, and stainless steel.
Claim 20
Dependent Claim
52 words
A product formed by the process comprising the steps of bringing a material into close proximity to a sputterable composition such that at least a portion of said sputterable composition is exposed, and sputtering from said sputterable composition to form in situ a mask on said material while anisotropically etching said material.
Claim 21
Dependent Claim
52 words
A product formed by the process comprising the steps of bringing a material into close proximity to a sputterable composition such that at least a portion of said sputterable composition is exposed, and sputtering from said sputterable composition to form in situ a mask on said material while anisotropically etching said material.
Claim 22
Dependent Claim
11 words
The product of claim 18 wherein said material comprises a semiconductor.
Claim 23
Dependent Claim
21 words
The product of claim 19 wherein said material comprises a member chosen from the group consisting of silicon, Ge and GaAs.
Claim 24
Dependent Claim
23 words
The product of either claim 18, 19, or 20 wherein said etching is produced using an environment comprising CCl 2 F 2 .
Claim 25
Dependent Claim
29 words
The product of claim 21 wherein said etching is produced using an environment comprising a mixture of O 2 , CCl 2 F 2 , and an inert gas.
Claim 26
Dependent Claim
19 words
The product of claim 22 wherein said inert gas is chosen from the group consisting of argon and helium.
Claim 27
Dependent Claim
23 words
The product of claim 18 wherein said sputterable material comprises a material chosen from the group consisting of aluminum, magnesium, and stainless steel.
References Cited (Backward Citations)
US3846294A
Cited
US4160045A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-08-17 | 1985-02-16 | 1985-08-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-08-17 | 1989-02-16 | 1989-08-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-08-17 | 1993-02-16 | 1993-08-18 | $7700.00 | Window Closed / Lapsed |