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Patent US4339470A successfully refreshed from Google Patents.
US4339470A
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Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer
Assignee: RCA Corp
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Filing: 1981-02-13
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Granted: 1982-07-13
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Expires: 2001-02-13
Abstract
Abstract An improved process for fabricating amorphous silicon solar cells in which the temperature of the substrate is varied during the deposition of the amorphous silicon layer is described. Solar cells manufactured in accordance with this process are shown to have increased efficiencies and fill factors when compared to solar cells manufactured with a constant substrate temperature during deposition of the amorphous silicon layer.
Inventors
- 👤 David E. Carlson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:22
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
61 words
In an improved method for fabricating amorphous silicon solar cells of the type comprising an amorphous silicon layer deposited on a substrate, the improvement comprising varying the temperature of the substrate during the deposition of the amorphous silicon layer such that the temperature is lowest during the deposition of the portion of the amorphous silicon layer which will receive incident light.
Claim 2
Dependent Claim
61 words
In an improved method for fabricating amorphous silicon solar cells of the type comprising an amorphous silicon layer deposited on a substrate, the improvement comprising varying the temperature of the substrate during the deposition of the amorphous silicon layer such that the temperature is lowest during the deposition of the portion of the amorphous silicon layer which will receive incident light.
Claim 3
Dependent Claim
34 words
The method of claim 1 wherein the substrate is opaque and the substrate is cooled within the range of about 400° C. to about 200° C. during the deposition of the amorphous silicon layer.
Claim 4
Dependent Claim
34 words
The method of claim 1 wherein the substrate is transparent and the substrate is heated within the range of about 200° C. to about 400° C. during the deposition of the amorphous silicon layer.
Claim 5
Dependent Claim
21 words
The method of claim 2 or claim 3 wherein the amorphous silicon layer is deposited by a glow discharge of silane.
Claim 6
Dependent Claim
14 words
The method of claim 4 wherein the glow discharge is a DC proximity discharge.
Claim 7
Dependent Claim
14 words
The method of claim 4 wherein the glow discharge is a DC anodic discharge.
Claim 8
Dependent Claim
13 words
The method of claim 4 wherein the glow discharge is an RF discharge.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-07-12 | 1986-01-11 | 1986-07-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-07-12 | 1990-01-11 | 1990-07-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-07-12 | 1994-01-11 | 1994-07-13 | $7700.00 | Window Closed / Lapsed |