US4338622A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Self-aligned semiconductor circuits and process therefor
Assignee: International Business Machines Corp
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Filing: 1979-06-29
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Granted: 1982-07-06
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Expires: 1999-06-29
Abstract
Abstract A semiconductor circuit in which a plurality of transistors is provided, the collector regions/contacts and the base regions/contacts of the transistors being mutually self-aligned. In one embodiment, the collectors have conductive layer contacts (such as metal) and are self-aligned to polysilicon base contacts while in another embodiment the base contacts are comprised of a conductive (metal) layer while polysilicon is used for the collector contacts. The collectors of these transistors can be butted to a field oxide to reduce the extrinsic base area and to minimize excess charge storage in the base region. The base contacts, whether polysilicon or metal, etc. provide alternate base current paths so that the removal of the extrinsic base area does not adversely affect the total amount of base current which can flow. The use of a polysilicon layer for the base contacts, where "fingers" are provided by the polysilicon layer, enhances wirability and the mode of fabrication of the structure, since the polysilicon fingers can have an insulating layer (grown oxide) thereover to provide electrical isolation from over-lying conductors. These self-alignment techniques provide enhanced electrical properties since the distance between the base and collector contacts is minimized and since the base-emitter depletion layer capacitance, the stored charge and the base series resistance are reduced. From a processing standpoint, an additional masking step is not required to form the collector regions.
Inventors
- 👤 George C. Feth
- 👤 Tak H. Ning
- 👤 Denny D. Tang
- 👤 Siegfried K. Wiedmann
- 👤 Hwa N. Yu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 10:08
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10D84/00; H10D84/60; H10D84/65
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
158 words
A MTL circuit comprising, in combination: an injector transistor located in a single crystal semiconductor layer, having collector, base and emitter regions, at least one logic fan-out transistor located in said semiconductor layer, having collector, base and emitter regions with electrical contacts thereto, wherein the collector region of said injector transistor is electrically connected to the base region of said fan-out transistor and wherein the collector region and its contact of said fan-out transistor are mutually self-aligned with the base region and the contact thereto of said fan-out transistor, recessed electrical isolation regions in said semiconductor layer abutting said collector region of said fan-out transistor, a polycrystalline semiconductor layer making electrical contact to the collector regions of said at least one fan-out transistor and located over said single crystal semiconductor layer, a metal layer located over said polycrystalline semiconductor layer and insulated therefrom for making electrical contact to said base region of said at least one fan-out transistor.
Claim 2
Dependent Claim
158 words
A MTL circuit comprising, in combination: an injector transistor located in a single crystal semiconductor layer, having collector, base and emitter regions, at least one logic fan-out transistor located in said semiconductor layer, having collector, base and emitter regions with electrical contacts thereto, wherein the collector region of said injector transistor is electrically connected to the base region of said fan-out transistor and wherein the collector region and its contact of said fan-out transistor are mutually self-aligned with the base region and the contact thereto of said fan-out transistor, recessed electrical isolation regions in said semiconductor layer abutting said collector region of said fan-out transistor, a polycrystalline semiconductor layer making electrical contact to the collector regions of said at least one fan-out transistor and located over said single crystal semiconductor layer, a metal layer located over said polycrystalline semiconductor layer and insulated therefrom for making electrical contact to said base region of said at least one fan-out transistor.
Claim 3
Dependent Claim
23 words
The circuit of claim 1, further including insulating regions buried in said single crystal semiconductor layer and located between adjacent collector regions therein.
Claim 4
Dependent Claim
37 words
The circuit of claim 1, including a plurality of fan-out transistors having a common base layer in said single crystal semiconductor, said common base layer being electrically contacted at a plurality of locations by said metal layer.
Claim 5
Dependent Claim
23 words
The circuit of claim 3, further including insulating regions located in said single crystal semiconductor layer between collector regions of said fan-out transistors.
Claim 6
Dependent Claim
24 words
The circuit of claim 1, where said injector transistor is a pnp transistor and said at least one fan-out transistor is a npn transistor.
Claim 7
Dependent Claim
24 words
The circuit of claim 1, where said injector transistor is a lateral transistor and said at least one fan-out transistor is a vertical transistor.
Claim 8
Dependent Claim
21 words
The circuit of claim 1, further including an electrically insulating layer located between said polycrystalline semiconductor layer and said metal layer.
Claim 9
Dependent Claim
42 words
The circuit of claim 1, where said polycrystalline semiconductor layer is doped to provide electrical conductivity thereof, and said single crystal semiconductor layer has regions therein containing a dopant which has diffused into said single crystal semiconductor layer from said polycrystalline layer.
Claim 10
Dependent Claim
13 words
The circuit of claim 1, where said fan-out transistor is a bipolar transistor.
Claim 11
Dependent Claim
23 words
The circuit of claim 1, where said single crystal semiconductor layer is selected from the group consisting essentially of Si, Ge and GaAs.
Claim 12
Dependent Claim
24 words
The circuit of claim 1, where said single crystal semiconductor layer is silicon and said polycrystalline semiconductor layer is a layer of doped polysilicon.
Claim 13
Dependent Claim
157 words
A MTL circuit comprising, in combination: an injector transistor located in a single crystal semiconductor layer, having collector, base and emitter regions, at least one logic fan-out transistor located in said semiconductor layer, having collector, base and emitter regions with electrical contacts thereto, wherein the collector region of said injector transistor is electrically connected to the base region of said fan-out transistor and wherein the collector region and its contact of said fan-out transistor are mutually self-aligned with the base region and the contact thereto of said fan-out transistor, recessed electrical isolation regions in said semiconductor layer abutting said collector region of said fan-out transistor, a polycrystalline semiconductor layer located over said single crystal semiconductor layer for making electrical contact to said base region of said at least one fan-out transistor, a conductive layer located over said polycrystalline layer and insulated therefrom for making electrical contact to said collector regions of said at least one fan-out transistor.
Claim 14
Dependent Claim
157 words
A MTL circuit comprising, in combination: an injector transistor located in a single crystal semiconductor layer, having collector, base and emitter regions, at least one logic fan-out transistor located in said semiconductor layer, having collector, base and emitter regions with electrical contacts thereto, wherein the collector region of said injector transistor is electrically connected to the base region of said fan-out transistor and wherein the collector region and its contact of said fan-out transistor are mutually self-aligned with the base region and the contact thereto of said fan-out transistor, recessed electrical isolation regions in said semiconductor layer abutting said collector region of said fan-out transistor, a polycrystalline semiconductor layer located over said single crystal semiconductor layer for making electrical contact to said base region of said at least one fan-out transistor, a conductive layer located over said polycrystalline layer and insulated therefrom for making electrical contact to said collector regions of said at least one fan-out transistor.
Claim 15
Dependent Claim
24 words
The circuit of claim 12, further including insulating regions buried in said single crystal semiconductor layer and located between adjacent fan-out transistor collector regions.
Claim 16
Dependent Claim
37 words
The circuit of claim 12, including a plurality of fan-out transistors having a common base layer in said single crystal semiconductor, said common base layer being electrically contacted at a plurality of locations by said polycrystalline layer.
Claim 17
Dependent Claim
23 words
The circuit of claim 14, further including insulating regions located in said single crystal semiconductor layer between collector regions of said fan-out transistors.
Claim 18
Dependent Claim
21 words
The circuit of claim 12, where said injector transistor is a pnp transistor and said fan-out transistor is a npn transistor.
Claim 19
Dependent Claim
21 words
The circuit of claim 12, where said injector transistor is a lateral transistor and said fan-out transistor is a vertical transistor.
Claim 20
Dependent Claim
21 words
The circuit of claim 12, further including an electrically insulating layer located between said polycrystalline semiconductor layer and said conductive layer.
Claim 21
Dependent Claim
42 words
The circuit of claim 12, where said polycrystalline semiconductor layer is doped to provide electrical conductivity thereof, and said single crystal semiconductor layer has regions therein containing a dopant which has diffused into said single crystal semiconductor layer from said polycrystalline layer.
Claim 22
Dependent Claim
21 words
The circuit of claim 12, where said semiconductor layer is selected from the group consisting essentially of Si, Ge, and GaAs.
Claim 23
Dependent Claim
24 words
The circuit of claim 12, where said single crystal semiconductor layer is silicon and said polycrystalline semiconductor layer is a layer of doped polysilicon.
Claim 24
Dependent Claim
224 words
A MTL circuit comprised of bipolar transistors and including, in combination: an injector transistor located in a single crystal semiconductor layer and having collector, base, and emitter regions, a plurality of logic fan-out transistors located in said single crystal semiconductor layer, said fan-out transistors having collector, base and emitter regions, said base regions being different portions of a common doped layer of said single crystal semiconductor layer, there being multiple electrical contacts to said common base region by a metal layer, and wherein the collector region of said injector transistor is electrically connected to the base regions of said fan-out transistors, first electrically insulating regions recessed in said single crystal semiconductor layer and abutting the collector regions of said fan-out transistors, second electrically insulating regions recessed in said single crystal semiconductor layer and located between adjacent collector regions of said fan-out transistors, a polycrystalline semiconductor layer making electrical contact to the collector regions of said fan-out transistors and located over said single crystal semiconductor layer, wherein the collector regions of said fan-out transistors are doped from and contacted by said polycrystalline semiconductor layer, the collector-base contact edges of said fan-out transistors being mutually self-aligned, an electrically insulating layer located over said polycrystalline semiconductor layer, a metal layer located over said insulating layer for making electrical contact to the base regions of said fan-out transistors.
Claim 25
Dependent Claim
224 words
A MTL circuit comprised of bipolar transistors and including, in combination: an injector transistor located in a single crystal semiconductor layer and having collector, base, and emitter regions, a plurality of logic fan-out transistors located in said single crystal semiconductor layer, said fan-out transistors having collector, base and emitter regions, said base regions being different portions of a common doped layer of said single crystal semiconductor layer, there being multiple electrical contacts to said common base region by a metal layer, and wherein the collector region of said injector transistor is electrically connected to the base regions of said fan-out transistors, first electrically insulating regions recessed in said single crystal semiconductor layer and abutting the collector regions of said fan-out transistors, second electrically insulating regions recessed in said single crystal semiconductor layer and located between adjacent collector regions of said fan-out transistors, a polycrystalline semiconductor layer making electrical contact to the collector regions of said fan-out transistors and located over said single crystal semiconductor layer, wherein the collector regions of said fan-out transistors are doped from and contacted by said polycrystalline semiconductor layer, the collector-base contact edges of said fan-out transistors being mutually self-aligned, an electrically insulating layer located over said polycrystalline semiconductor layer, a metal layer located over said insulating layer for making electrical contact to the base regions of said fan-out transistors.
Claim 26
Dependent Claim
234 words
A MTL circuit comprised of bipolar transistors and including, in combination: an injector transistor for providing base current to a plurality of logic fan-out bipolar transistors, said injector transistor being located in a single crystal semiconductor layer and having collector, base and emitter regions, a plurality of logic fan-out bipolar transistors located in said single crystal semiconductor layers, having collector, base and emitter regions with electrical contacts thereto, wherein the collector region of said injector transistor is electrically connected to the base regions of said plurality of fan-out transistors via a current-carrying path located over said semiconductor layer, said fan-out transistor base regions being different portions of a common doped region in said single crystal semiconductor layer, there being mutually self-aligned collector-base contact edges of said logic fan-out transistors, first electrically insulating regions recessed in said single crystal semiconductor layer and abutting the collector regions of said fan-out transistors, second electrically insulating regions located in said single crystal semiconductor layer between the collector regions of said fan-out transistors, a polycrystalline semiconductor layer located over said single crystal semiconductor layer for making electrical contact to the base regions of said fan-out transistors and electrically interconnecting said fan-out transistor base regions to said injector transistor, an electrical insulation layer located over said polycrystalline semiconductor layer, a conductive layer located over said electrical insulation layer for providing electrical contact to the collector regions of said fan-out transistors.
Claim 27
Dependent Claim
234 words
A MTL circuit comprised of bipolar transistors and including, in combination: an injector transistor for providing base current to a plurality of logic fan-out bipolar transistors, said injector transistor being located in a single crystal semiconductor layer and having collector, base and emitter regions, a plurality of logic fan-out bipolar transistors located in said single crystal semiconductor layers, having collector, base and emitter regions with electrical contacts thereto, wherein the collector region of said injector transistor is electrically connected to the base regions of said plurality of fan-out transistors via a current-carrying path located over said semiconductor layer, said fan-out transistor base regions being different portions of a common doped region in said single crystal semiconductor layer, there being mutually self-aligned collector-base contact edges of said logic fan-out transistors, first electrically insulating regions recessed in said single crystal semiconductor layer and abutting the collector regions of said fan-out transistors, second electrically insulating regions located in said single crystal semiconductor layer between the collector regions of said fan-out transistors, a polycrystalline semiconductor layer located over said single crystal semiconductor layer for making electrical contact to the base regions of said fan-out transistors and electrically interconnecting said fan-out transistor base regions to said injector transistor, an electrical insulation layer located over said polycrystalline semiconductor layer, a conductive layer located over said electrical insulation layer for providing electrical contact to the collector regions of said fan-out transistors.
Claim 28
Dependent Claim
32 words
The circuit of claim 23, wherein said polycrystalline layer is a doped polycrystalline layer and wherein said common doped region includes portions thereof having a dopant diffused from said polycrystalline semiconductor layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-07-05 | 1986-01-04 | 1986-07-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-07-05 | 1990-01-04 | 1990-07-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-07-05 | 1994-01-04 | 1994-07-06 | $7700.00 | Window Closed / Lapsed |