Method for producing planar surfaces having very fine peaks in the micron range

Claim 1

Method for producing a planar surface of conductive material having very fine peaks in at most the micron range of conductive material conductively connected thereto, comprising the steps of: irradiating a sheet of planar dielectric material, which is to serve as a matrix, with a beam of parallel high energy heavy ions to form a plurality of nuclear traces of the same length in the dielectric material with the density and parallel orientation of the irradiation, and thus of said nuclear traces, corresponding to the desired density and orientation of peaks on the planar surface; subsequently etching said sheet of dielectric material to expose said nuclear traces and form hole-like cavities with diameters in the micron range; and filling said hole-like cavities with conducting material and covering one of the major surfaces of said sheet of planar dielectric material with the open ends of said cavities with conductive material to connect together the conductive material filling said hole-like cavities.

Claim 4

A method as defined in claims 1 or 2 wherein said step of filling includes depositing a metal onto said sheet of planar dielectric material to fill said cavities and cover said one surface of said sheet of planar dielectric material.

Claim 7

A method for producing a copper planar surface having very fine peaks in the micron range or smaller with the aid of a mica matrix comprising the steps of: irradiating a solid mica body having a planar major surface with accelerated heavy ions of sufficient energy and in a given quantity to produce a desired distribution of latent nuclear traces in said body; etching the solid mica body to expose and open the latent nuclear traces to the desired hole diameter; vapor-depositing a gold layer on the major surface of said etched-open solid mica body which is opposite said planar major surface; contacting said vapor-deposited gold layer with a platinum wire and covering said gold layer and said wire with an insulating foil; immersing said solid body in a copper electrolyte bath; electrolytically depositing copper on said solid mica body to fill said exposed nuclear traces and cover said planar major surface by applying a direct voltage across said bath; and mechanically removing said insulating foil, said platinum contacting wire and said gold layer.

Claim 8

A method for producing a copper planar surface having very fine peaks in the micron range or smaller with the aid of a mica matrix comprising the steps of: irradiating a solid mica body having a planar major surface with accelerated heavy ions of sufficient energy and in a given quantity to produce a desired distribution of latent nuclear traces in said body; etching the solid mica body to expose and open the latent nuclear traces to the desired hole diameter; vapor-depositing a gold layer on the major surface of said etched-open solid mica body which is opposite said planar major surface; contacting said vapor-deposited gold layer with a platinum wire and covering said gold layer and said wire with an insulating foil; immersing said solid body in a copper electrolyte bath; electrolytically depositing copper on said solid mica body to fill said exposed nuclear traces and cover said planar major surface by applying a direct voltage across said bath; and mechanically removing said insulating foil, said platinum contacting wire and said gold layer.