Method of forming an improved gate member for a gate injected floating gate memory device

Claim 1

In a process for forming a floating gate storage device, the device having: a. a body of semiconductor material with a pair of semiconductor regions of a first conductivity type embeded therein and spaced a given distance one from the other; b. an intermediate semiconductor region of opposite conductivity type defining the space between the pair of regions; and c. a floating gate structure having a floating gate member disposed over the intermediate region and insulated therefrom and a control gate member disposed over the floating gate member and insulated therefrom; an improved method of forming the gate structure, comprising the steps of: growing a first insulating layer over at least the intermediate region; forming a floating gate member on the first insulating layer over the intermediate region; growing a second insulating layer over the gate member and the first insulating layer; depositing a layer of semi-insulating polycrystalline silicon over the second insulating layer; and depositing a conductive control gate member over the semi-insulating layer.