Method for forming a headless resistor utilizing selective diffusion and special contact formation

Claim 1

A method for forming a resistor in a semiconductor body, said semiconductor body having an impurity concentration of less than 10 17 ohms per cubic centimeter and said semiconductor body including a resistor diffusion formed adjacent a surface of said body on which an overlying insulator has been formed, said process comprising: removing first and second non-adjacent portions of said insulation over said resistor diffusion; introducing an impurity through said openings in said insulating layer to thereby form two contact diffusions in portions of the resistor diffusion, said contact diffusions being substantially coincident with the shape of said resistor diffusion and adjacent said body of semiconductor material at the locations at which each of the contacts is made, said contact diffusion of such concentration to form an ohmic contact to a Schottky contact forming material; and forming ohmic contacts of a Schottky contact forming material for ohmically contacting each of said contact diffusions, said formation occuring at a temperature of less than 520° C., to thereby create a Schottky diode between any portion of said ohmic connections which is formed in contact with any portion of said semiconductor body.

Claim 2

A method for forming a resistor in a semiconductor body, said semiconductor body having an impurity concentration of less than 10 17 ohms per cubic centimeter and said semiconductor body including a resistor diffusion formed adjacent a surface of said body on which an overlying insulator has been formed, said process comprising: removing first and second non-adjacent portions of said insulation over said resistor diffusion; introducing an impurity through said openings in said insulating layer to thereby form two contact diffusions in portions of the resistor diffusion, said contact diffusions being substantially coincident with the shape of said resistor diffusion and adjacent said body of semiconductor material at the locations at which each of the contacts is made, said contact diffusion of such concentration to form an ohmic contact to a Schottky contact forming material; and forming ohmic contacts of a Schottky contact forming material for ohmically contacting each of said contact diffusions, said formation occuring at a temperature of less than 520° C., to thereby create a Schottky diode between any portion of said ohmic connections which is formed in contact with any portion of said semiconductor body.

Claim 3

A method for forming a resistor in a semiconductor body, said semiconductor body having a resistivity of greater than 0.1 ohm centimeter and said semiconductor body including a resistor diffusion formed adjacent a surface of said body on which an overlying insulating layer has been formed, said process comprising: removing first and second non-adjacent portions of said insulating layer over said resistor diffusion to thereby form openings to the resistor diffusion; introducing an impurity through said openings in said insulating layer to thereby form two contact diffusions in portions of the resistor diffusion, said contact diffusions being substantially coincident with the shape of said resistor diffusion and adjacent said semiconductor body at the locations at which each of the contacts is made, said contact diffusion of such concentration to form an ohmic contact to a Schottky contact forming material; and forming ohmic connections of a Schottky contact forming material for ohmically contact each of said contact diffusions, said formation occuring at a temperature of less than 520° C., to thereby create a Schottky diode between any portion of said ohmic connections which is formed in contact with any portion of said semiconductor body.

Claim 4

A method for forming a resistor in a semiconductor body, said semiconductor body having a resistivity of greater than 0.1 ohm centimeter and said semiconductor body including a resistor diffusion formed adjacent a surface of said body on which an overlying insulating layer has been formed, said process comprising: removing first and second non-adjacent portions of said insulating layer over said resistor diffusion to thereby form openings to the resistor diffusion; introducing an impurity through said openings in said insulating layer to thereby form two contact diffusions in portions of the resistor diffusion, said contact diffusions being substantially coincident with the shape of said resistor diffusion and adjacent said semiconductor body at the locations at which each of the contacts is made, said contact diffusion of such concentration to form an ohmic contact to a Schottky contact forming material; and forming ohmic connections of a Schottky contact forming material for ohmically contact each of said contact diffusions, said formation occuring at a temperature of less than 520° C., to thereby create a Schottky diode between any portion of said ohmic connections which is formed in contact with any portion of said semiconductor body.