US4330182A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming semiconducting materials and barriers
Assignee: Plasma Physics Corp
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Filing: 1980-04-09
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Granted: 1982-05-18
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Expires: 2000-04-09
Abstract
Abstract Photovoltaic junctions useful for solar energy conversion and for electrophotographic image formation are fabricated from a layer of amorphous boron in contact with a layer of amorphous silicon. The amorphous boron is preferably deposited at a reduced temperature on the amorphous silicon; or, alternatively, the amorphous silicon is deposited on a boron-bearing body previously deposited on an opaque metallic substrate.
Inventors
- 👤 John H. Coleman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 10:39
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/164; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/503; C23C16/505; C23C16/509; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32532; H01J37/32541; H01J37/32623; H10F10/17; H10F71/00; H10F71/10; H10F71/103; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/52; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 42
Claim 1
Independent Claim
27 words
A semiconductor device comprising a body of hydrogenated amorphous silicon having a surface portion in contact with a body of amorphous boron to form a semiconductor junction.
Claim 2
Dependent Claim
27 words
A semiconductor device comprising a body of hydrogenated amorphous silicon having a surface portion in contact with a body of amorphous boron to form a semiconductor junction.
Claim 3
Dependent Claim
28 words
The semiconductor device in claim 1 in which a second surface portion of said hydrogenated amorphous silicon is in contact with N-type silicon to form an ohmic contact.
Claim 4
Dependent Claim
18 words
The semiconductor device in claim 1 in which said hydrogenated amorphous boron is deposited on a conducting substrate.
Claim 5
Dependent Claim
35 words
The semiconductor device in claim 1 in which said hydrogenated amorphous boron accepts a negative electrostatic charge and said amorphous silicon is photoconductively responsive selectively to electromagnetic radiation to form an image of said charge.
Claim 6
Dependent Claim
36 words
The semiconductor device in claim 1 in which said hydrogenated amorphous boron accepts a negative electrostatic charge and said hydrogenated amorphous silicon is photoconductively responsive to an X-ray pattern to form an image of said charge.
Claim 7
Dependent Claim
18 words
The semiconductor device in claim 1 in which a metallic contact is applied to said hydrogenated amorphous boron.
Claim 8
Dependent Claim
19 words
The semiconductor device in claim 2 in which a semitransparent metallic contact is applied to said hydrogenated amorphous boron.
Claim 9
Dependent Claim
18 words
The semiconductor device in claim 7 in which an anti-reflection coating is applied to said transparent metallic coating.
Claim 10
Dependent Claim
23 words
The semiconductor device in claim 4 in which a dielectric coating is applied to said hydrogenated amorphous boron to facilitate said image formation.
Claim 11
Dependent Claim
21 words
The semiconductor device in claim 1 in which a dielectric barrier is interposed between one of said bodies and an electrode.
Claim 12
Dependent Claim
16 words
The semiconductor device in claim 1 in which said body of hydrogenated amorphous silicon is doped.
Claim 13
Dependent Claim
12 words
The semiconductor device in claim 3 in which said substrate is opaque.
Claim 14
Dependent Claim
29 words
A semiconductor device comprising a body of hydrogenated amorphous silicon having one surface in contact with a body comprising boron to develop a semiconductor junction with enhanced open-circuit voltage.
Claim 15
Dependent Claim
29 words
A semiconductor device comprising a body of hydrogenated amorphous silicon having one surface in contact with a body comprising boron to develop a semiconductor junction with enhanced open-circuit voltage.
Claim 16
Dependent Claim
21 words
The semiconductor device in claim 13 in which a dielectric barrier is interposed between one of said bodies and an electrode.
Claim 17
Dependent Claim
24 words
The semiconductor device in claim 13 in which a second surface portion of said hydrogenated amorphous silicon is contacted ohmically with an N-type semiconductor.
Claim 18
Dependent Claim
22 words
The device in claim 15 in which said N-type semiconductor is contacted by a second N-type semiconductor of a second said device.
Claim 19
Dependent Claim
39 words
The semiconductor device of claim 15 in which a semitransparent electrode is in contact with said ohmic contact and an opaque electrode is in contact with a surface portion of said body comprising boron to form a solar cell.
Claim 20
Dependent Claim
33 words
The semiconductor device of claim 15 in which a semitransparent electrode is in contact with a surface of said body comprising boron and a second electrode is in contact with said ohmic electrode.
Claim 21
Dependent Claim
19 words
The semiconductor device in claim 15 in which said N-type semiconductor is deposited at a temperature below 180° C.
Claim 22
Dependent Claim
19 words
The semiconductor device in claim 15 in which said N-type semiconductor has a hydrogen content in excess of 30%.
Claim 23
Dependent Claim
20 words
The semiconductor device in claim 13 in which said body comprising boron has a hydrogen content in excess of 32%.
Claim 24
Dependent Claim
36 words
The semiconductor device in claim 13 further comprising a substrate having a conducting portion in which said body comprising boron is disposed between said body of hydrogenated amorphous silicon and said conducting portion of said substrate.
Claim 25
Dependent Claim
16 words
The semiconductor device in claim 22 in which said conducting portion of said substrate is opaque.
Claim 26
Dependent Claim
16 words
The semiconductor device in claim 13 in which said body of hydrogenated amorphous silicon is doped.
Claim 27
Dependent Claim
44 words
A photoresponsive device comprising a body of hydrogenated amorphous silicon having one surface in contact with a body comprising boron to form a semiconductor junction therebetween and in which electromagnetic radiation is admitted into said P-N junction through said body of hydrogenated amorphous silicon.
Claim 28
Dependent Claim
44 words
A photoresponsive device comprising a body of hydrogenated amorphous silicon having one surface in contact with a body comprising boron to form a semiconductor junction therebetween and in which electromagnetic radiation is admitted into said P-N junction through said body of hydrogenated amorphous silicon.
Claim 29
Dependent Claim
21 words
The photoresponsive device in claim 25 in which a dielectric barrier is interposed between one of said bodies and an electrode.
Claim 30
Dependent Claim
22 words
The photoresponsive device in claim 25 in which a surface portion of said body comprising boron is contacted with an opaque electrode.
Claim 31
Dependent Claim
13 words
The photoresponsive device in claim 27 in which said electrode is stainless steel.
Claim 32
Dependent Claim
14 words
The semiconductor device of claim 25 in which said hydrogenated amorphous silicon is doped.
Claim 33
Dependent Claim
23 words
The semiconductor device in claim 25 further comprising a conducting substrate in which said body comprising boron is disposed on said conducting substrate.
Claim 34
Dependent Claim
13 words
The semiconductor device in claim 30 in which said conducting substrate is opaque.
Claim 35
Dependent Claim
32 words
A semiconductor device comprising a body of hydrogenated amorphous silicon having one surface in contact with a body comprising boron and carbon to develop a semiconductor junction with enhanced open circuit voltage.
Claim 36
Dependent Claim
32 words
A semiconductor device comprising a body of hydrogenated amorphous silicon having one surface in contact with a body comprising boron and carbon to develop a semiconductor junction with enhanced open circuit voltage.
Claim 37
Dependent Claim
32 words
The semiconductor device in claim 32 further comprising a conducting substrate in which said body comprising boron and carbon is positioned between said body of hydrogenated amorphous silicon and said conducting substrate.
Claim 38
Dependent Claim
13 words
The semiconductor device in claim 33 in which said conducting substrate is opaque.
Claim 39
Dependent Claim
44 words
A photoresponsive device comprising a body of hydrogenated amorphous silicon having one surface in contact with a body comprising boron and carbon to develop a semiconductor junction therebetween and in which electromagnetic radiation is admitted into said semiconductor junction through said hydrogenated amorphous silicon.
Claim 40
Dependent Claim
44 words
A photoresponsive device comprising a body of hydrogenated amorphous silicon having one surface in contact with a body comprising boron and carbon to develop a semiconductor junction therebetween and in which electromagnetic radiation is admitted into said semiconductor junction through said hydrogenated amorphous silicon.
Claim 41
Dependent Claim
21 words
The photoresponsive device in claim 35 in which said body comprising boron and carbon is disposed on an opaque conducting substrate.
Claim 42
Dependent Claim
25 words
The photoresponsive device in claim 35 further comprising an electrode in which a dielectric barrier is interposed between one of said bodies and an electrode.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-05-17 | 1985-11-16 | 1986-05-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-05-17 | 1989-11-16 | 1990-05-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-05-17 | 1993-11-16 | 1994-05-18 | $7700.00 | Window Closed / Lapsed |