US4266984A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Enhanced open circuit voltage in amorphous silicon photovoltaic devices
Assignee: ExxonMobil Technology and Engineering Co
•
Filing: 1979-12-03
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Granted: 1981-05-12
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Expires: 1999-12-03
Abstract
Abstract An amorphous silicon photovoltaic device having enhanced photovoltage and increased longevity is produced by treatment of a barrier forming region of the amorphous silicon in the presence of a partial pressure of sulfur dioxide.
Inventors
- 👤 Christopher R. Wronski
- 👤 Bruce P. Myers
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 05:51
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/16; H10F77/169; H10F77/1692; H10F10/00; H10F10/10; H10F10/18; H10F71/00; H10F71/10; H10F71/103; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S148/00; Y10S148/153
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
63 words
An enhanced voltage photovoltaic device having a body of amorphous silicon produced by the process comprising: depositing a layer of photoconductive amorphous silicon onto a substrate; exposing a surface of said amorphous silicon layer to a gas containing a partial pressure of sulfur dioxide at a temperature ranging from between 23° C. and 300° C.; forming a diode junction to said exposed surface.
Claim 2
Dependent Claim
63 words
An enhanced voltage photovoltaic device having a body of amorphous silicon produced by the process comprising: depositing a layer of photoconductive amorphous silicon onto a substrate; exposing a surface of said amorphous silicon layer to a gas containing a partial pressure of sulfur dioxide at a temperature ranging from between 23° C. and 300° C.; forming a diode junction to said exposed surface.
Claim 3
Dependent Claim
25 words
The photovoltaic device of claim 1 wherein said exposing is for a period in excess of about 1/2 hour and less than about 10 hours.
Claim 4
Dependent Claim
20 words
The photovoltaic device of claim 1 wherein said exposing is accomplished at a temperature between 23° C. and 100° C.
Claim 5
Dependent Claim
17 words
The photovoltaic device of claim 1 wherein said gas comprises a mixture of SO 2 in argon.
Claim 6
Dependent Claim
20 words
The photovoltaic device of claim 4 wherein said mixture comprises between about 1% and about 5% SO 2 in argon.
Claim 7
Dependent Claim
22 words
The photovoltaic device of claim 5 wherein said exposing is accomplished at about 100° C. for a period of about 2 hours.
Claim 8
Dependent Claim
15 words
The photovoltaic device of claim 1 wherein said diode junction comprise a Schottky diode junction.
Claim 9
Dependent Claim
47 words
A process for increasing both photovoltage and longevity in a photovoltaic device having a body of amorphous silicon, said process comprising first exposing at least one surface of said amorphous silicon to gaseous sulfur dioxide and secondly forming a photovoltaic junction to said exposed amorphous silicon surface.
Claim 10
Dependent Claim
47 words
A process for increasing both photovoltage and longevity in a photovoltaic device having a body of amorphous silicon, said process comprising first exposing at least one surface of said amorphous silicon to gaseous sulfur dioxide and secondly forming a photovoltaic junction to said exposed amorphous silicon surface.
References Cited (Backward Citations)
US4064521A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-05-11 | 1984-11-10 | 1985-05-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-05-11 | 1988-11-10 | 1989-05-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-05-11 | 1992-11-10 | 1993-05-12 | $7700.00 | Window Closed / Lapsed |