Patent US4328263A successfully refreshed from Google Patents.
← Back to Patent Explorer
US4328263A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of manufacturing semiconductor devices using lift-off technique

Assignee: Fujitsu Ltd
•
Filing: 1980-07-28
•
Granted: 1982-05-04
•
Expires: 2000-07-28
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract In a method of manufacturing semiconductor devices, liquid glass is applied to the substrate of a semiconductor device to cover the upper surface of a film of photoresist formed on a conductor layer of the substrate and used as an etching mask for patterning the conductor layer. The substrate is baked at a sufficiently high temperature to harden the liquid glass and deform and shrink the photoresist film to expose the sides of such film. The photoresist film is removed. The hardened liquid glass on the photoresist film is simultaneously removed by lift off.

Inventors

  • 👤 Toshio Kurahashi
  • 👤 Kazuo Tokitomo
  • 👤 Tadashi Kiriseko

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 21:50
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6342; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10P14/6923; H10P50/00; H10P76/00; H10P76/20; H10P76/202; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/058; H10W20/071; H10W20/092; H10W20/40; H10W20/45; H10W20/48; H10P14/6328; H10P14/6334; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/951

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 111 words
A method of manufacturing a semiconductor device having a semiconductor substrate and a conductor layer formed on said substrate, said method comprising the steps of forming a film of photoresist on the conductor layer of said semiconductor device and using said film as an etching mask for patterning said conductor layer; applying liquid glass to said substrate to cover the upper surface of said photoresist film; baking said substrate at a sufficiently high temperature to harden the liquid glass and deform and shrink said photoresist film to expose the sides of said film; removing said photoresist film; and simultaneously removing by lift off the hardened liquid glass on said photoresist film.
Claim 2
Independent Claim 111 words
A method of manufacturing a semiconductor device having a semiconductor substrate and a conductor layer formed on said substrate, said method comprising the steps of forming a film of photoresist on the conductor layer of said semiconductor device and using said film as an etching mask for patterning said conductor layer; applying liquid glass to said substrate to cover the upper surface of said photoresist film; baking said substrate at a sufficiently high temperature to harden the liquid glass and deform and shrink said photoresist film to expose the sides of said film; removing said photoresist film; and simultaneously removing by lift off the hardened liquid glass on said photoresist film.
Claim 3
Dependent Claim 43 words
A method as claimed in claim 1, wherein said substrate with said liquid glass is baked at temperatures in the range of 170° to 200° C. to provide a hardened liquid glass film having a thickness in the order of several thousand A.
Claim 4
Dependent Claim 31 words
A method as claimed in claim 1, further comprising the step of heating the substrate at temperatures in a range of 450° to 500° C. prior to removing said photoresist film.
Claim 5
Dependent Claim 34 words
A method as claimed in claim 1, further comprising the step of forming a film of phospho-silicate glass on said substrate to cover said conductor layer from which said liquid glass has been removed.

References Cited (Backward Citations)

US3723277A Cited
FR2188304B1 Cited
GB1523677A Cited
US4123565A Cited
US4029562A Cited
US4181755A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1985-05-03 1985-11-02 1986-05-04 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1989-05-03 1989-11-02 1990-05-04 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1993-05-03 1993-11-02 1994-05-04 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag