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US4320178A
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Structure of the insulator--semiconductor type
Assignee: Individual
•
Filing: 1980-04-02
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Granted: 1982-03-16
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Expires: 2000-04-02
Abstract
Abstract Structure of the insulator--semiconductor type constituted by a semiconducting crystalline substrate formed from a III-V compound of formula (A III B V ) coated with an insulating layer, wherein the substrate has a specific crystalline orientation and wherein the insulator is a sulphide in accordance with the formula (A III B V )S 4 . It also relates to a process for the preparation of such a structure. Applications of the invention occur in the fields of microelectronics and optoelectronics.
Inventors
- 👤 Daniel Chemla
- 👤 Louis Cot
- 👤 Jean Jerphagnon
- 👤 Jean Durand
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:31
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/66; H10D64/00; H10D64/60; H10D64/66; H10D64/68
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
47 words
A structure of the insulator-semiconductor type comprising a semiconducting crystalline substrate formed from a III-V compound of formula (A III B V ) coated with an insulating layer, wherein the insulating layer is a sulphide in accordance with the formula (A III B V )S 4 .
Claim 2
Dependent Claim
47 words
A structure of the insulator-semiconductor type comprising a semiconducting crystalline substrate formed from a III-V compound of formula (A III B V ) coated with an insulating layer, wherein the insulating layer is a sulphide in accordance with the formula (A III B V )S 4 .
Claim 3
Dependent Claim
17 words
A structure of the insulator--semiconductor type according to claim 1, wherein the semiconductor is a compound GaAs.
Claim 4
Dependent Claim
17 words
A structure of the insulator--semiconductor type according to claim 1, wherein the semiconductor is the compound InP.
Claim 5
Dependent Claim
20 words
A structure of the insulator--semiconductor type according to claim 1, wherein the crystalline orientation of the substrate is orientation (110).
Claim 6
Dependent Claim
84 words
A process for the preparation of the structure according to claim 1, wherein a semiconducting crystalline substrate of formula A III B V is prepared, this substrate is placed in a flask containing sulphur or hydrogen sulphide, the flask is placed in an oven, the flask is heated to a temperature of approximately 400° C., this temperature is maintained for the time necessary for obtaining a desired sulphide thickness, the temperature is returned to ambient temperature and the substrate is removed from the flask.
Claim 7
Dependent Claim
17 words
A process according to claim 5, wherein the semiconducting crystalline substrate has a crystalline orientation of 110.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-03-15 | 1985-09-14 | 1986-03-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-03-15 | 1989-09-14 | 1990-03-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-03-15 | 1993-09-14 | 1994-03-16 | $7700.00 | Window Closed / Lapsed |