Patent US4320168A successfully refreshed from Google Patents.
US4320168A
Expired / Lapsed
US
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Method of forming semicrystalline silicon article and product produced thereby
Assignee: BP Solar International LLC
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Filing: 1978-12-11
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Granted: 1982-03-16
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Expires: 1998-12-11
Abstract
Abstract A method of forming a semicrystalline silicon solar energy cell having individual grains of silicon at the light-receiving surface of the cell. Impurities in the silicon concentrated in the grain boundaries are removed by etching away at least substantial portions of the boundaries at the wafer surface and between adjoining grains so that, upon subsequent diffusion, a photovoltaic junction will be formed at the light-receiving surface and will extend into the interior of the wafer between adjoining grains.
Inventors
- 👤 Joseph Lindmayer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 14:49
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/16; H10F77/162; C; C01; C01B; C01B33/00; C01B33/02; H10F77/164; H10F77/1642; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/546; Y10; Y10S; Y10S438/00; Y10S438/96; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528; Y10T428/26
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
138 words
A method of making a photovoltaic cell from a wafer of semicrystalline silicon having a surface adapted for the impingement of light thereon, said surface being formed from individual grains of silicon having a mean diameter of at least about 100 microns and grain boundaries that at said surface are in contact with or separated only slightly from the boundaries of adjoining grains and in which boundaries impurities and crystallographic defects are concentrated, comprising subjecting said impingement surface to etching that will preferentially attack said grain boundaries as compared with the interiors of said grains until at least a substantial portion of the grain boundaries at said surface have been removed and grooves have been formed in said surface between said adjoining grains thereat, and then forming a photovoltaic junction inwardly of said impingement surface of said wafer.
Claim 2
Independent Claim
138 words
A method of making a photovoltaic cell from a wafer of semicrystalline silicon having a surface adapted for the impingement of light thereon, said surface being formed from individual grains of silicon having a mean diameter of at least about 100 microns and grain boundaries that at said surface are in contact with or separated only slightly from the boundaries of adjoining grains and in which boundaries impurities and crystallographic defects are concentrated, comprising subjecting said impingement surface to etching that will preferentially attack said grain boundaries as compared with the interiors of said grains until at least a substantial portion of the grain boundaries at said surface have been removed and grooves have been formed in said surface between said adjoining grains thereat, and then forming a photovoltaic junction inwardly of said impingement surface of said wafer.
Claim 3
Dependent Claim
27 words
A method of making a photovoltaic cell as claimed in claim 1, in which said etching is carried out by the use of an aqueous, acidic solution.
Claim 4
Dependent Claim
32 words
A method of making a photovoltaic cell as claimed in claim 2, in which said etching is carried out by the use of an aqueous mixture of nitric, hydrofluoric and acetic acids.
Claim 5
Dependent Claim
25 words
A method of making a photovoltaic cell as claimed in claim 1, in which said etching is carried by the use of a caustic solution.
Claim 6
Dependent Claim
24 words
A method of making a photovoltaic cell as claimed in claim 4, in which said caustic solution is formed from an alkali metal hydroxide.
Claim 7
Dependent Claim
59 words
A method of making a photovoltaic cell as claimed in claim 1, in which said etching step is carried out at least until a substantial portion of the boundaries between adjoining grains have been etched away to form crevices extending between said adjoining grains, and said junction is then formed at said impingement surface and between said adjoining grains.
Claim 8
Dependent Claim
32 words
A method of making a photovoltaic cell as claimed in claim 5, in which said crevices extend between said adjoining grains for at least about one-quarter of the depth of said grains.
Claim 9
Dependent Claim
35 words
A wafer formed from grains of semicrystalline silicon and suitable for being made into a photovoltaic cell, said wafer being produced by the practice of any of the methods of claims 1, 5 or 6.
Claim 10
Dependent Claim
22 words
A method of making a photovoltaic cell as claimed in claim 1, in which said etching is carried out at room temperature.
Claim 11
Dependent Claim
26 words
A method of making a photovoltaic cell as claimed in claim 1, in which said photovoltaic junction is formed by diffusing an impurity into said surface.
References Cited (Backward Citations)
US2902419A
Cited
US3007830A
Cited
US2904613A
Cited
US3429756A
Cited
US3480818A
Cited
US4155785A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-03-15 | 1985-09-14 | 1986-03-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-03-15 | 1989-09-14 | 1990-03-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-03-15 | 1993-09-14 | 1994-03-16 | $7700.00 | Window Closed / Lapsed |