Multi-mode circuit

Claim 2

A level shift circuit comprising: a first transistor means of first conductivity type and second and third transistors of second conductivity type, each one of said transistor and transistor means having a conduction path and a control electrode; means connecting the conduction path of said first transistor means between an output terminal and a first point of operating potential; means connecting the conduction paths of said second and third transistors between said output terminal and a second point of operating potential; means connecting the control electrodes of said first transistor means and said second transistor to a control terminal; means for applying an operating potential between said first and second points of operating potential; means for selectively applying different values of control potential to said control terminal; and means for applying an input signal to the control electrode of said third transistor.

Claim 3

The combination as claimed in claim 1 wherein said means for applying an operating potential between said first and second points of operating potential includes means for selectively applying different values of operating potential.

Claim 4

The combination as claimed in claim 2 wherein said means for selectively applying different values of operating potential includes means for applying a relatively large potential; and wherein said means for selectively applying different values of control potential includes means for applying, concurrently, with the application of said relatively large potential, a voltage having a value intermediate the voltages at said first and second points of operating potential to the control electrode of said second transistor, whereby a predetermined portion of the output voltage at said output terminal appears across the conduction path of said second transistor and the remainder appears across the conduction path of said third transistor.

Claim 5

The combination as claimed in claim 1 wherein said means for selectively applying different values of control potential to said control terminal includes means for applying to the control terminal one of: (a) a voltage equal in value to that applied to said first point for turning off said first transistor means and turning on said second transistor; (b) a voltage equal in value to that applied to said second point for turning on said first transistor means and turning off said second transistor; and (c) a voltage intermediate that applied to said first and second points for turning on both of said first transistor means and said second transistor at the same time.

Claim 6

The combination as claimed in claim 1 wherein said first transistor means includes an enhancement type insulated-gate field-effect transistor and a depletion type insulated-gate field-effect transistor; wherein the conduction paths of said enhancement and depletion transistors are connected in series and wherein the gate electrodes of said enhancement and depletion transistors are connected in common.

Claim 7

The combination as claimed in claim 1 further including a fourth transistor means and a fifth transistor of said second conductivity type and a sixth transistor of first conductivity type, each one of said transistor means and transistors having a a conduction path and a control electrode; means connecting the conduction path of said fourth transistor means between said output terminal and the control electrodes of said fifth and sixth transistors; means connecting the conduction path of said fifth transistor between an input/output (I/O) terminal and a first point of reference potential; means connecting the conduction path of said sixth transistor between said I/O terminal and a third point of operating potential; means connecting said I/O terminal to the control electrode of said third transistor; means for applying a different value of control voltage to the control electrode of said fourth transistor means; and means for applying different values of operating potential to said third point of operating potential.

Claim 8

In combination with an array of elements which can be programmed to either one of two conditions by the application of relatively large voltages to the elements and whose programmed conditions can be sensed by the application of relatively small voltages, and where the elements are arranged in rows and columns, and where there is at least one row conductor per row of elements and one column conductor per column of elements, a circuit for applying voltages to a conductor suitable to program or sense an element comprising: a first relatively high voltage breakdown transistor of one conductivity type, and second and third transistors of second conductivity type, each one of said transistors having a conduction path and a control electrode; means connecting the conduction path of said first transistor between a first point of operating potential and a conductor; means connecting the conduction paths of said second and third transistors in series between said conductor and a second point of operating potential; means selectively applying an operating potential across said first and second points of operating potential having a relatively large value for programming an element to one of said two conditions; means applying a control voltage to the control electrodes of said first and second transistors having a value intermediate the voltages at said first and second points for turning on said first transistor and coupling via its conduction path the potential at said first point to said output terminal and for concurrently turning on said second transistor for causing a predetermined portion of the potential at said output terminal to be developed across the conduction path of said second transistor and the remainder of said output voltage across the conduction path of said third transistor.

Claim 9

In combination with an array of elements which can be programmed to either one of two conditions by the application of relatively large voltages to the elements and whose programmed conditions can be sensed by the application of relatively small voltages, and where the elements are arranged in rows and columns, and where there is at least one row conductor per row of elements and one column conductor per column of elements, a circuit for applying voltages to a conductor suitable to program or sense an element comprising: a first relatively high voltage breakdown transistor of one conductivity type, and second and third transistors of second conductivity type, each one of said transistors having a conduction path and a control electrode; means connecting the conduction path of said first transistor between a first point of operating potential and a conductor; means connecting the conduction paths of said second and third transistors in series between said conductor and a second point of operating potential; means selectively applying an operating potential across said first and second points of operating potential having a relatively large value for programming an element to one of said two conditions; means applying a control voltage to the control electrodes of said first and second transistors having a value intermediate the voltages at said first and second points for turning on said first transistor and coupling via its conduction path the potential at said first point to said output terminal and for concurrently turning on said second transistor for causing a predetermined portion of the potential at said output terminal to be developed across the conduction path of said second transistor and the remainder of said output voltage across the conduction path of said third transistor.