US4315968A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon coated silicon carbide filaments and method
Assignee: Avco Corp
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Filing: 1980-02-06
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Granted: 1982-02-16
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Expires: 2000-02-06
Abstract
Abstract Silicon carbide filament is produced by overcoating a carbon monofilament core using continuous process vapor deposition. The deposition takes place by passing the carbon monofilament through a reactor into which gaseous sources of silicon and carbon are injected. At a deposition temperature of about 1300 C., a deposit of fine grained beta crystals of silicon carbide are formed. Application of a thin coating of silicon-rich silicon carbide on the surface of the filament both adds strength and provides a surface which is readily bonded to metals, glass and resin matrix materials during the forming of composite structures.
Inventors
- 👤 Raymond J. Suplinskas
- 👤 Thomas W. Henze
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 17:29
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/009; C04B35/00; C04B35/622; C04B35/62227; C04B41/45; C04B41/52; C04B41/80; C04B41/81; C04B41/89; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/32; C23C16/325; D; D01; D01F; D01F11/00; D01F11/10; D01F11/12; D01F11/126; Y; Y10; Y10T; Y10T428/00; Y10T428/29; Y10T428/2913; Y10T428/2918; Y10T428/292; Y10T428/2933; Y10T428/2962; Y10T428/298
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
52 words
A high strength, high modulus threadlike article useful in forming composite matrix structures comprising a silicon carbide substrate filament having applied thereto a thin coating of silicon-rich material wherein the ratio of C/Si varies from one (stoichiometric) at the interface of the substrate filament to zero (pure silicon) at the exterior surface.
Claim 2
Dependent Claim
52 words
A high strength, high modulus threadlike article useful in forming composite matrix structures comprising a silicon carbide substrate filament having applied thereto a thin coating of silicon-rich material wherein the ratio of C/Si varies from one (stoichiometric) at the interface of the substrate filament to zero (pure silicon) at the exterior surface.
Claim 3
Dependent Claim
26 words
The high strength, high-modulus threadlike article as described in claim 1 wherein the thickness of the thin coating of material measures between 0.5 and 4 microns.
Claim 4
Independent Claim
84 words
A method of producing a silicon-rich coating on a silicon carbide filament substrate wherein the ratio of C/Si coating varies from one at the interface of the coating and filament to zero at the surface comprising the steps of: vapor depositing silicon carbide on a filament substrate moving through a reactor; and adding a chlorosilane to the reactor downstream of where silicon carbide is deposited on the substrate and vapor depositing a silicon-rich silicon carbide coating from the chlorosilane on the silicon carbide deposit.
Claim 5
Independent Claim
84 words
A method of producing a silicon-rich coating on a silicon carbide filament substrate wherein the ratio of C/Si coating varies from one at the interface of the coating and filament to zero at the surface comprising the steps of: vapor depositing silicon carbide on a filament substrate moving through a reactor; and adding a chlorosilane to the reactor downstream of where silicon carbide is deposited on the substrate and vapor depositing a silicon-rich silicon carbide coating from the chlorosilane on the silicon carbide deposit.
Claim 6
Dependent Claim
31 words
A method of producing a silicon-rich coating on a silicion carbide substrate as described in claim 3 wherein the deposition temperature is in the range of 1000° C. to 1350° C.
Claim 7
Dependent Claim
28 words
A method of producing a silicon-rich coating on a silicon carbide substrate as described in claim 4 wherein the chlorosilane is taken from the family SiCl n H.sub.(4-n).
Claim 8
Dependent Claim
22 words
A method of producing a silicon-rich coating on a silicon carbide substrate as described in claim 5 wherein the chlorosilane is dichlorosilane.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-02-15 | 1985-08-17 | 1986-02-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-02-15 | 1989-08-17 | 1990-02-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-02-15 | 1993-08-17 | 1994-02-16 | $7700.00 | Window Closed / Lapsed |