Silicon purification system

Claim 1

A method for providing a bed of purified silicon crystals wherein silicon is crystallized from a solvent metal and the amount of solvent metal remaining in the crystal bed is reduced to a low level, the method comprising the steps of: (a) providing a molten body containing silicon and at least one metal selected from the group consisting of tin, zinc, aluminum, silver and lead, the silicon being present in an amount greater than the eutectic point of the silicon-metal combination, the metal adapted to act as a solvent for the silicon, said molten body containing Fe, Ti, Mn and Cr impurities at levels not greater than 1.5 wt.%, 0.2 wt.%, 2 wt.% and 0.4 wt.%, respectively, wherein intermetallic compounds containing these impurities, Si and said metal are avoided during subsequent crystallization; (b) extracting heat from the body to provide a solid phase containing silicon in crystal form and to concentrate impurities in a molten phase; (c) thereafter, removing a substantial part of the molten phase from the solid phase containing said silicon crystals; (d) subjecting the solid phase to a melting action to melt a fraction of the solid phase for purposes of removing metal-silicon adhering to said crystals; and (e) draining the molten phase from the solid phase to separate at least a fraction of the metal-silicon combination adhering to said crystals of silicon.

Claim 2

A method for providing a bed of purified silicon crystals wherein silicon is crystallized from a solvent metal and the amount of solvent metal remaining in the crystal bed is reduced to a low level, the method comprising the steps of: (a) providing a molten body containing silicon and at least one metal selected from the group consisting of tin, zinc, aluminum, silver and lead, the silicon being present in an amount greater than the eutectic point of the silicon-metal combination, the metal adapted to act as a solvent for the silicon, said molten body containing Fe, Ti, Mn and Cr impurities at levels not greater than 1.5 wt.%, 0.2 wt.%, 2 wt.% and 0.4 wt.%, respectively, wherein intermetallic compounds containing these impurities, Si and said metal are avoided during subsequent crystallization; (b) extracting heat from the body to provide a solid phase containing silicon in crystal form and to concentrate impurities in a molten phase; (c) thereafter, removing a substantial part of the molten phase from the solid phase containing said silicon crystals; (d) subjecting the solid phase to a melting action to melt a fraction of the solid phase for purposes of removing metal-silicon adhering to said crystals; and (e) draining the molten phase from the solid phase to separate at least a fraction of the metal-silicon combination adhering to said crystals of silicon.

Claim 6

A method for providing a bed of purified silicon crystals wherein silicon is crystallized from aluminum and the amount of aluminum remaining in the crystal bed is reduced to a low level, the method comprising the steps of: (a) providing a molten body containing from 20 to 80 wt.% silicon, the remainder aluminum and impurities, said molten body containing Fe, Ti, Mn and Cr impurities at levels not greater than 0.8 wt.%, 0.2 wt.%, 2.0 wt.% and 0.4 wt.%, respectively, wherein intermetallic compounds containing these impurities, silicon and aluminum are avoided during subsequent crystallization; (b) extracting heat from the body to provide a solid phase containing silicon in crystal form and to concentrate impurities in a molten phase, the heat being extracted to a level which lowers the temperature of the body to about 580° C.; (c) thereafter, removing a substantial part of the molten phase from the solid phase containing said silicon crystals; (d) subjecting the solid phase to a melting action to melt a fraction of the solid phase for purposes of removing aluminum-silicon adhering to said crystals; and (e) draining the molten phase from the solid phase to separate at least a fraction of the aluminum-silicon combination adhering to said crystals of silicon.

Claim 7

A method for providing a bed of purified silicon crystals wherein silicon is crystallized from aluminum and the amount of aluminum remaining in the crystal bed is reduced to a low level, the method comprising the steps of: (a) providing a molten body containing from 20 to 80 wt.% silicon, the remainder aluminum and impurities, said molten body containing Fe, Ti, Mn and Cr impurities at levels not greater than 0.8 wt.%, 0.2 wt.%, 2.0 wt.% and 0.4 wt.%, respectively, wherein intermetallic compounds containing these impurities, silicon and aluminum are avoided during subsequent crystallization; (b) extracting heat from the body to provide a solid phase containing silicon in crystal form and to concentrate impurities in a molten phase, the heat being extracted to a level which lowers the temperature of the body to about 580° C.; (c) thereafter, removing a substantial part of the molten phase from the solid phase containing said silicon crystals; (d) subjecting the solid phase to a melting action to melt a fraction of the solid phase for purposes of removing aluminum-silicon adhering to said crystals; and (e) draining the molten phase from the solid phase to separate at least a fraction of the aluminum-silicon combination adhering to said crystals of silicon.

Claim 12

A method for providing a bed of purified silicon crystals wherein silicon is crystallized from aluminum and the amount of aluminum remaining in the crystal bed is reduced to a low level, the method comprising the steps of: (a) providing a molten body containing 20 to 80 wt.% silicon, the remainder aluminum and impurities, said molten body containing Fe, Ti, Mn, and Cr impurities at levels not greater than 0.8 wt.%, 0.2 wt.%, 2.0 wt.% and 0.4 wt.%, respectively, wherein intermetallic compounds containing these impurities, silicon and aluminum are avoided during subsequent crystallization; (b) treating the body with a gas to remove heat therefrom to provide a solid phase therein containing silicon in crystal form and to concentrate impurities in an aluminum molten phase, the heat being extracted to lower the temperature of the body to a temperature in the range of about 577° to 660° C.; (c) during the heat removing step, subjecting the body to a mixing action; (d) thereafter, removing a substantial part of the molten phase from the solid phase containing said silicon crystals by draining while maintaining the solid phase at a temperature in the range of 577° to 650° C. and subjecting the solid phase to a compacting action for purposes of minimizing the amount of liquid remaining therein; (e) subjecting the solid phase to a melting action to melt a fraction of the solid phase for purposes of removing a substantial amount of aluminum-silicon combination adhering to said crystals; and (f) draining the molten phase from the solid phase to separate at least a fraction of the metal-silicon combination adhering to said crystals of silicon.

Claim 13

A method for providing a bed of purified silicon crystals wherein silicon is crystallized from aluminum and the amount of aluminum remaining in the crystal bed is reduced to a low level, the method comprising the steps of: (a) providing a molten body containing 20 to 80 wt.% silicon, the remainder aluminum and impurities, said molten body containing Fe, Ti, Mn, and Cr impurities at levels not greater than 0.8 wt.%, 0.2 wt.%, 2.0 wt.% and 0.4 wt.%, respectively, wherein intermetallic compounds containing these impurities, silicon and aluminum are avoided during subsequent crystallization; (b) treating the body with a gas to remove heat therefrom to provide a solid phase therein containing silicon in crystal form and to concentrate impurities in an aluminum molten phase, the heat being extracted to lower the temperature of the body to a temperature in the range of about 577° to 660° C.; (c) during the heat removing step, subjecting the body to a mixing action; (d) thereafter, removing a substantial part of the molten phase from the solid phase containing said silicon crystals by draining while maintaining the solid phase at a temperature in the range of 577° to 650° C. and subjecting the solid phase to a compacting action for purposes of minimizing the amount of liquid remaining therein; (e) subjecting the solid phase to a melting action to melt a fraction of the solid phase for purposes of removing a substantial amount of aluminum-silicon combination adhering to said crystals; and (f) draining the molten phase from the solid phase to separate at least a fraction of the metal-silicon combination adhering to said crystals of silicon.