US4303841A — VMOS/Bipolar power switch

Claim 1

Independent Claim 318 words

A high-power switching circuit comprising: a first vertical metal oxide semiconductor (VMOS) field effect transistor having a gate electrode receptive of a first control signal, a drain electrode and a source electrode; a first bipolar power transistor having a collector electrode connected to said drain electrode of the VMOS transistor, and receptive of a first operating voltage, a base electrode connected to said source electrode of said VMOS transistor, and an emitter electrode; means receptive to said first control signal and including the characteristics of said VMOS transistor for biasing said bipolar transistor to an operating point within a range up to the edge of saturation; and switching transistor means having a control electrode receptive of a second control signal, and a main current path connected between a source of a second operating voltage and the base electrode of said first bipolar transistor switch, said second control signal being applied to the control electrode of said switching transistor means prior to the application of said first control signal to the gate of said first VMOS transistor, said switching transistor means being responsive to said second control signal for substantially lowering the impedance of its main current path for permitting current flow therethrough into the base electrode of and for initiating the turn on of said first bipolar transistor switch, the latter lowering the voltage at its collector as it begins to turn on and reduce the impedance between its collector and emitter electrodes, and substantially immediately thereafter said first control signal being applied to the gate of said first VMOS transistor, for turning the latter on to complete the turn on of said first bipolar transistor switch, after which time said control signal is removed, turning off said switching transistor means, whereby in this manner transient phenomenon is substantially reduced in turning on said first VMOS transistor at a time when said first bipolar switch is partially conducting.

Claim 2

Dependent Claim 318 words

A high-power switching circuit comprising: a first vertical metal oxide semiconductor (VMOS) field effect transistor having a gate electrode receptive of a first control signal, a drain electrode and a source electrode; a first bipolar power transistor having a collector electrode connected to said drain electrode of the VMOS transistor, and receptive of a first operating voltage, a base electrode connected to said source electrode of said VMOS transistor, and an emitter electrode; means receptive to said first control signal and including the characteristics of said VMOS transistor for biasing said bipolar transistor to an operating point within a range up to the edge of saturation; and switching transistor means having a control electrode receptive of a second control signal, and a main current path connected between a source of a second operating voltage and the base electrode of said first bipolar transistor switch, said second control signal being applied to the control electrode of said switching transistor means prior to the application of said first control signal to the gate of said first VMOS transistor, said switching transistor means being responsive to said second control signal for substantially lowering the impedance of its main current path for permitting current flow therethrough into the base electrode of and for initiating the turn on of said first bipolar transistor switch, the latter lowering the voltage at its collector as it begins to turn on and reduce the impedance between its collector and emitter electrodes, and substantially immediately thereafter said first control signal being applied to the gate of said first VMOS transistor, for turning the latter on to complete the turn on of said first bipolar transistor switch, after which time said control signal is removed, turning off said switching transistor means, whereby in this manner transient phenomenon is substantially reduced in turning on said first VMOS transistor at a time when said first bipolar switch is partially conducting.

Claim 3

Dependent Claim 57 words

The high-power solid-state switching circuit of claim 1, wherein said switching transistor means includes a second vertical metal oxide semiconductor field effect transistor having a drain electrode receptive of said second operating voltage, a source electrode connected to the base electrode of said first bipolar power transistor, and a gate electrode receptive of said second control signal.

Claim 4

Dependent Claim 76 words

The switching circuit of claim 1 or claim 2 further including: differentiating means responsive to an input signal for producing said second control signal; and integrating means responsive to said input signal for producing said first control signal a relatively short period of time after the beginning of, but during the time of occurrence of, said second control signal, the time duration of said first control signal ending substantially at the termination of said input signal.

Claim 5

Dependent Claim 186 words

A power switching device capable of being fabricated on a single semiconductor substrate comprising: first, second, and third terminals; a vertical metal oxide semiconductor (VMOS) field effect transistor having a gate, source, and drain electrodes; a bipolar transistor having a base, emitter, and collector electrodes; conductive means for electrically connecting said drain to said collector, said source to said base, said gate to said first terminal for receiving a first control signal, said emitter to said second terminal, and the common connection of said drain and collector to said third terminal; means responsive to said first control signal and including the operating characteristics of said VMOS transistor for biasing said bipolar transistor within an operating range up to the edge of saturation; and a switching transistor having a fourth terminal receptive of a second control signal and a main current path electrically connected to the base of the bipolar transistor, said second control signal being applied to the fourth terminal of said switching transistor prior to the application of said first control signal to the first terminal for initiating the turn on of the bipolar transistor.

Claim 6

Dependent Claim 186 words

A power switching device capable of being fabricated on a single semiconductor substrate comprising: first, second, and third terminals; a vertical metal oxide semiconductor (VMOS) field effect transistor having a gate, source, and drain electrodes; a bipolar transistor having a base, emitter, and collector electrodes; conductive means for electrically connecting said drain to said collector, said source to said base, said gate to said first terminal for receiving a first control signal, said emitter to said second terminal, and the common connection of said drain and collector to said third terminal; means responsive to said first control signal and including the operating characteristics of said VMOS transistor for biasing said bipolar transistor within an operating range up to the edge of saturation; and a switching transistor having a fourth terminal receptive of a second control signal and a main current path electrically connected to the base of the bipolar transistor, said second control signal being applied to the fourth terminal of said switching transistor prior to the application of said first control signal to the first terminal for initiating the turn on of the bipolar transistor.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1984-11-30	1985-06-01	1985-12-01	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1988-11-30	1989-06-01	1989-12-01	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	1992-11-30	1993-06-01	1993-12-01	$7700.00	Window Closed / Lapsed

VMOS/Bipolar power switch

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