Controlled power-semiconductor component having an annular cage

Claim 1

Controlled power semiconductor component, comprising a disc-shaped silicon body having a surface on each side thereof, two insulated ductile electrodes each having surfaces on each side thereof, one of said surfaces of each of said ductile electrodes being in pressure contact with one of said surfaces of said silicon body, two pressure-contact discs formed of one of the group consisting of molybdenum and tungsten each having an edge, and a surface on one side thereof in pressure contact with the other of said surfaces of said ductile electrodes, at least one control electrode connection being electrically insulated from and conducted through a respective ductile electrode and contact disc on one of said sides of said silicon body, a flat annular cage formed of insulating material for insertion in a housing centralizing said silicon body and contact discs, said cage having two circular disc-shaped flanges being disposed one above the other in axial direction of said silicon body and a hollow cylindrical middle portion connecting said flanges to each other forming a single piece, each of said flanges having internal polygonal recesses formed therein forming polygonal surfaces being tensionally connected to said edges of said contact discs, said cage being divided into two parts along the diameter thereof.