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Semiconductor ion emitter for mass spectrometry

Assignee: The University of Osaka
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Filing: 1979-02-13
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Granted: 1981-11-17
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Expires: 1999-02-13
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Abstract

Abstract A semiconductor ion emitter for a mass spectrometer, comprises an electrode having semiconductor whiskers provided on the conductive surface of a base. A process for manufacturing such semiconductor ion emitter, includes steps of evaporating gold onto a wire having a diameter of about 60 μm, preheating the coated wire, and supplying a gas containing the semiconductor for growth of the whiskers on the gold plated wire. An apparatus for such process comprises a vacuum vessel for enclosing the wire, means for controllably heating the wire and means for controllably supplying a gas containing the semiconductor into the vacuum vessel.

Inventors

  • 👤 Takekiyo Matsuo
  • 👤 Itsuo Katakuse
  • 👤 Hisashi Matsuda

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 17:07
CPC Classifications
H; H01; H01J; H01J49/00; H01J49/02; H01J49/10; H01J49/16; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12431; Y10T428/12438; Y10T428/12493; Y10T428/12528; Y10T428/12771; Y10T428/12806; Y10T428/12826; Y10T428/12833; Y10T428/12861; Y10T428/12889

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 40 words
Ion emitter for mass spectrometry comprising a wire having a diameter of approximately 60 μm and having a conductive metal peripheral surface, and a multiplicity of whiskers of semiconductor material projecting from said conductive metal peripheral surface of said wire.
Claim 2
Dependent Claim 40 words
Ion emitter for mass spectrometry comprising a wire having a diameter of approximately 60 μm and having a conductive metal peripheral surface, and a multiplicity of whiskers of semiconductor material projecting from said conductive metal peripheral surface of said wire.
Claim 3
Dependent Claim 24 words
Ion emitter according to claim 1, in which said whiskers have a length of approximately 20 μm and a diameter of approximately 0.2 μm.
Claim 4
Dependent Claim 18 words
Ion emitter according to claim 1, in which said peripheral surface of said wire comprises a gold layer.
Claim 5
Dependent Claim 16 words
Ion emitter according to any of claims 1 to 3, in which said wire is metal.
Claim 6
Dependent Claim 23 words
Ion emitter according to claim 4, in which the metal of said wire is selected from the group consisting of tungsten and tantalum.
Claim 7
Dependent Claim 19 words
Ion emitter according to claim 3, in which said wire is of semiconductor material coated with said gold layer.
Claim 8
Dependent Claim 24 words
Ion emitter according to claim 6, in which said semiconductor material of said wire is selected from the group consisting of silicon and germanium.
Claim 9
Dependent Claim 19 words
Ion emitter according to claim 3, in which said wire is of insulating material coated with said gold layer.
Claim 10
Dependent Claim 25 words
Ion emitter according to claim 8, in which said insulating material of said wire is selected from the group consisting of glass and synthetic resin.
Claim 11
Dependent Claim 31 words
Ion emitter according to claim 1 or 2, in which said wire is welded to the tips of two other wires of larger diameter serving as a support and electrical connectors.

References Cited (Backward Citations)

US3466485A Cited
US3457478A Cited
US3852595A Cited
US3998678A Cited
US4008412A Cited
US4099986A Cited
US4175234A Cited
US4163918A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1984-11-16 1985-05-18 1985-11-17 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1988-11-16 1989-05-18 1989-11-17 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1992-11-16 1993-05-18 1993-11-17 $7700.00 Window Closed / Lapsed

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