US4301369A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor ion emitter for mass spectrometry
Assignee: The University of Osaka
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Filing: 1979-02-13
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Granted: 1981-11-17
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Expires: 1999-02-13
Abstract
Abstract A semiconductor ion emitter for a mass spectrometer, comprises an electrode having semiconductor whiskers provided on the conductive surface of a base. A process for manufacturing such semiconductor ion emitter, includes steps of evaporating gold onto a wire having a diameter of about 60 μm, preheating the coated wire, and supplying a gas containing the semiconductor for growth of the whiskers on the gold plated wire. An apparatus for such process comprises a vacuum vessel for enclosing the wire, means for controllably heating the wire and means for controllably supplying a gas containing the semiconductor into the vacuum vessel.
Inventors
- 👤 Takekiyo Matsuo
- 👤 Itsuo Katakuse
- 👤 Hisashi Matsuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:34
CPC Classifications
H; H01; H01J; H01J49/00; H01J49/02; H01J49/10; H01J49/16; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12431; Y10T428/12438; Y10T428/12493; Y10T428/12528; Y10T428/12771; Y10T428/12806; Y10T428/12826; Y10T428/12833; Y10T428/12861; Y10T428/12889
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
40 words
Ion emitter for mass spectrometry comprising a wire having a diameter of approximately 60 μm and having a conductive metal peripheral surface, and a multiplicity of whiskers of semiconductor material projecting from said conductive metal peripheral surface of said wire.
Claim 2
Dependent Claim
40 words
Ion emitter for mass spectrometry comprising a wire having a diameter of approximately 60 μm and having a conductive metal peripheral surface, and a multiplicity of whiskers of semiconductor material projecting from said conductive metal peripheral surface of said wire.
Claim 3
Dependent Claim
24 words
Ion emitter according to claim 1, in which said whiskers have a length of approximately 20 μm and a diameter of approximately 0.2 μm.
Claim 4
Dependent Claim
18 words
Ion emitter according to claim 1, in which said peripheral surface of said wire comprises a gold layer.
Claim 5
Dependent Claim
16 words
Ion emitter according to any of claims 1 to 3, in which said wire is metal.
Claim 6
Dependent Claim
23 words
Ion emitter according to claim 4, in which the metal of said wire is selected from the group consisting of tungsten and tantalum.
Claim 7
Dependent Claim
19 words
Ion emitter according to claim 3, in which said wire is of semiconductor material coated with said gold layer.
Claim 8
Dependent Claim
24 words
Ion emitter according to claim 6, in which said semiconductor material of said wire is selected from the group consisting of silicon and germanium.
Claim 9
Dependent Claim
19 words
Ion emitter according to claim 3, in which said wire is of insulating material coated with said gold layer.
Claim 10
Dependent Claim
25 words
Ion emitter according to claim 8, in which said insulating material of said wire is selected from the group consisting of glass and synthetic resin.
Claim 11
Dependent Claim
31 words
Ion emitter according to claim 1 or 2, in which said wire is welded to the tips of two other wires of larger diameter serving as a support and electrical connectors.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-11-16 | 1985-05-18 | 1985-11-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-11-16 | 1989-05-18 | 1989-11-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-11-16 | 1993-05-18 | 1993-11-17 | $7700.00 | Window Closed / Lapsed |