Magnetic target plate for use in magnetron sputtering of magnetic films

Claim 2

In a magnetron sputtering apparatus of the type which includes means for producing a gas plasma, magnetic means for producing a magnetic field, a magnetic target, means for positioning the magnetic target between the gas plasma and the magnetic means, and means for heating the magnetic target to a temperature at which the saturation magnetization of the magnetic target is substantially reduced, whereby the magnetic field can penetrate the target and densify the gas plasma, the improvement wherein said magnetic target comprises: means defining selected regions of relatively high reluctance in said magnetic target, said regions cooperating with said magnetic means to cause said magnetic field to extend into the gas plasma and to thereby densify portions of said plasma before the heating means is effective to substantially reduce the saturation magnetization of the target.

Claim 3

The apparatus as defined in claim 1 wherein said means defining selected regions of relatively high reluctance comprise at least one groove formed in said target, whereby the thickness of the target is selectively reduced at said groove.

Claim 4

The apparatus as defined in claim 1 wherein said target comprises a plate-like member having a substantially uniform thickness, and said means defining selected regions of relatively high reluctance comprises means defining selected regions of reduced thickness in said plate-like member.

Claim 5

The apparatus as defined in claim 3 wherein said selected regions of reduced thickness are defined by a plurality of grooves formed in said plate-like member.

Claim 6

The apparatus as defined in claim 4 wherein said grooves have a width-to-depth ratio of approximately 1:2.

Claim 7

In a method for magnetron sputtering a magnetic target to produce a magnetic film on a substrate spaced from the target, such method comprising the steps of supporting a magnetic target in the path of magnetic flux emanating from a source of magnetization so that the target acts as a shunt to such magnetic flux, producing a gas plasma in the vicinity of the supported magnetic target, attracting gas ions from the gas plasma toward the target, thereby causing atomicsized particles to become sputtered from the target and onto a substrate spaced from the target, and heating the target to a temperature substantially equal to or above its Curie temperature to render the target non-magnetic, thereby allowing the magnetic flux to penetrate the target and densify the gas plasma, the improvement wherein said heating step is accelerated by restricting the magnetic flux path through selected regions of the target material, whereby magnetic flux passing through the target material is forced outside the volume of the target and into the gas plasma before the target is heated to its Curie temperature.

Claim 8

In a method for magnetron sputtering a magnetic target to produce a magnetic film on a substrate spaced from the target, such method comprising the steps of supporting a magnetic target in the path of magnetic flux emanating from a source of magnetization so that the target acts as a shunt to such magnetic flux, producing a gas plasma in the vicinity of the supported magnetic target, attracting gas ions from the gas plasma toward the target, thereby causing atomicsized particles to become sputtered from the target and onto a substrate spaced from the target, and heating the target to a temperature substantially equal to or above its Curie temperature to render the target non-magnetic, thereby allowing the magnetic flux to penetrate the target and densify the gas plasma, the improvement wherein said heating step is accelerated by restricting the magnetic flux path through selected regions of the target material, whereby magnetic flux passing through the target material is forced outside the volume of the target and into the gas plasma before the target is heated to its Curie temperature.

Claim 9

The method according to claim 6 wherein said restriction step is effected by increasing the magnetic reluctance of the target material at selected regions.

Claim 10

The method according to claim 7 wherein said increasing step comprises forming at least one groove in the target material to selectively reduce the thickness of the target material at a selected region.