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US4298671A
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Tellurium layer allows vapor deposition of crystalline selenium thereon in making double layer electrophotographic record material
Assignee: Licentia Patent Verwaltungs GmbH
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Filing: 1979-02-16
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Granted: 1981-11-03
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Expires: 1999-02-16
Abstract
Abstract In a process for producing an electrophotographic recording material composed of a double layer of amorphous and crystallized selenium on an electrically conductive carrier, a layer of tellurium having a thickness of 10 to 500 nm is applied onto the surface of the carrier, and selenium is then vapor-deposited onto the tellurium layer to a thickness of 20 to 100μ to form the double layer.
Inventors
- 👤 Karl-Heinz Kassel
- 👤 Manfred Lutz
- 👤 Josef Stuke
- 👤 Hubert Walsdorfer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 15:52
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/121; C; C23; C23C; C23C14/00; C23C14/02; C23C14/024; G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/043; G03G5/0433
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
102 words
In a process for producing an electrophotographic recording material composed of a double layer of amorphous and crystallized selenium on an electrically conductive substrate, the improvement comprising applying a layer of tellurium having a thickness of 10 to 500 nm onto the surface of the substrate, and then vapor-depositing selenium at a rate of about 1 μ/min onto said tellurium layer to a thickness of 20 to 100μ while said substrate is at a temperature of 62°-75° C., to form a double layer comprising a crystallized selenium layer overlying the tellurium layer and an amorphous selenium layer overlying the crystallized selenium layer.
Claim 2
Dependent Claim
102 words
In a process for producing an electrophotographic recording material composed of a double layer of amorphous and crystallized selenium on an electrically conductive substrate, the improvement comprising applying a layer of tellurium having a thickness of 10 to 500 nm onto the surface of the substrate, and then vapor-depositing selenium at a rate of about 1 μ/min onto said tellurium layer to a thickness of 20 to 100μ while said substrate is at a temperature of 62°-75° C., to form a double layer comprising a crystallized selenium layer overlying the tellurium layer and an amorphous selenium layer overlying the crystallized selenium layer.
Claim 3
Dependent Claim
23 words
A process as defined in claim 1 wherein said step of vapor-depositing takes place at a pressure of less than 10 -4 mbar.
Claim 4
Dependent Claim
25 words
A process as defined in claim 1 or 2 wherein said step of applying comprises vapor-depositing the tellurium at a rate of about 3 nm/min.
Claim 5
Dependent Claim
46 words
A process as defined in claim 1 or 2 comprising bringing the conductive substrate, before the start of said applying step, to a temperature of about 62° to 75° C. and said steps of applying and vapor-depositing are performed in succession in a single process step.
Claim 6
Dependent Claim
53 words
A process as defined in claim 1 or 2 wherein said step of applying is carried out by vapor-depositing the tellurium onto the conductive substrate at a temperature of 20° to 30° C. and comprising bringing the conductive substrate to a temperature of 62° to 75° C. before said step of vapor-depositing selenium.
Claim 7
Dependent Claim
27 words
Process according to claim 4, wherein said conductive substrate is brought to a temperature of about 62° to 65° C. before the start of said applying step.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-11-02 | 1985-05-04 | 1985-11-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-11-02 | 1989-05-04 | 1989-11-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-11-02 | 1993-05-04 | 1993-11-03 | $7700.00 | Window Closed / Lapsed |