US4094675A
Expired / Lapsed
US
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Vapor deposition of photoconductive selenium onto a metallic substrate having a molten metal coating as bonding layer
Assignee: Licentia Patent Verwaltungs GmbH
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Filing: 1974-07-17
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Granted: 1978-06-13
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Expires: 1994-07-17
Abstract
Abstract An electrophotographic image carrier is made by depositing an intermediate layer on an electrically conductive substrate and then vapor-depositing, on the intermediate layer, an inorganic photoconductive layer while maintaining the temperature of the substrate during the deposition of the photoconductive layer at a value which is above the melting point of the intermediate layer, but below the damaging temperature of the photoconductive layer.
Inventors
- 👤 Hans-Hermann Beschoner
- 👤 Gottfried Guder
- 👤 Hartmut Dulken
- 👤 Karl-Heinz Kassel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:17
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08207; G03G5/043; G03G5/0433; G03G5/10; G03G5/102; G03G5/14; G03G5/142; G03G5/144
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
127 words
A method of making an electrophotographic image carrier, comprising the following steps: (a) applying an intermediate layer on a electrically conductive substrate; the material of said intermediate layer being selected from the group consisting of indium, gallium, bismuth, lead, tin, cadmium, the alloys thereof and sulphur; said alloys consisting essentially of the elements constituting members of said group; (b) subsequent to step (a), vapor-depositing an amorphous inorganic photoconductive layer made of selenium, a selenium alloy or a selenium compound, on said intermediate layer; and (c) at least at the beginning of step (b), maintaining the temperature of the substrate at a value which is above the melting point of the material of the intermediate layer and below the damaging temperature of the material of the photoconductive layer.
Claim 2
Independent Claim
127 words
A method of making an electrophotographic image carrier, comprising the following steps: (a) applying an intermediate layer on a electrically conductive substrate; the material of said intermediate layer being selected from the group consisting of indium, gallium, bismuth, lead, tin, cadmium, the alloys thereof and sulphur; said alloys consisting essentially of the elements constituting members of said group; (b) subsequent to step (a), vapor-depositing an amorphous inorganic photoconductive layer made of selenium, a selenium alloy or a selenium compound, on said intermediate layer; and (c) at least at the beginning of step (b), maintaining the temperature of the substrate at a value which is above the melting point of the material of the intermediate layer and below the damaging temperature of the material of the photoconductive layer.
Claim 3
Dependent Claim
13 words
A method as defined in claim 1, wherein the substrate is a metal.
Claim 4
Dependent Claim
12 words
A method as defined in claim 1, wherein said substrate is metallized.
Claim 5
Dependent Claim
16 words
A method as defined in claim 1, wherein the intermediate layer is vapor-deposited on said substrate.
Claim 6
Dependent Claim
16 words
A method as defined in claim 1, wherein the intermediate layer is sprayed on said substrate.
Claim 7
Dependent Claim
18 words
A method as defined in claim 1, wherein the intermediate layer is applied to the substrate by galvanization.
Claim 8
Dependent Claim
16 words
A method as defined in claim 1, wherein the material of the intermediate layer contains sulphur.
Claim 9
Dependent Claim
56 words
A method as defined in claim 1, wherein step (a) comprises the vapor-deposition of a gallium-indium vapor mixture on an aluminum substrate while maintaining the subtrate at room temperature; step (b) comprises the vapor-deposition of selenium on the intermediate layer; and step (c) comprises the maintenance of the temperature of the substrate at about 60° C.
Claim 10
Dependent Claim
56 words
A method as defined in claim 1, wherein step (a) comprises the vapor-desposition of indium on a steel substrate, while maintaining the substrate at room temperature; step (b) comprises the vapor-deposition of As 2 Se 3 on the intermediate layer; and step (c) comprises the maintenance of the temperature of the substrate at about 200° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-06-12 | 1981-12-12 | 1982-06-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-06-12 | 1985-12-12 | 1986-06-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-06-12 | 1989-12-12 | 1990-06-13 | $7700.00 | Window Closed / Lapsed |