US4011079A
Expired / Lapsed
US
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Method for producing an electrophotographic recording material
Assignee: Licentia Patent Verwaltungs GmbH
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Filing: 1974-08-01
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Granted: 1977-03-08
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Expires: 1994-08-01
Abstract
Abstract In the fabrication of an electrophotographic recording material of the type composed of selenium, selenium compounds, or alloys with selenium, the method is simplified by initially vapor-depositing the photoconductive recording material onto a carrier at a temperature below the glass transformation temperature, and then heating the recording material to a higher second temperature range between the glass transformation temperature and a temperature just below that at which the electrophotographic properties of the recording material begin to change.
Inventors
- 👤 Johannes Berle
- 👤 Hartmut Dulken
- 👤 Gottfried Guder
- 👤 Karl-Heinz Kassel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 22:52
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08207
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
116 words
A method for producing an amorphous electrophotographic recording material of selenium, selenium compounds, or alloys with selenium, wherein the selenium, selenium compounds, or alloys with selenium are present only in amorphous form, by depositing the recording material on a conductive carrier, comprising the steps of applying, by vapor depositing, a photoconductive layer on the conductive carrier at a first temperatuure range below the glass transformation temperature, and then heating the photoconductive layer on the conductive carrier at a higher second temperature range the lower limit of which is the glass transformation temperature of the photoconductive layer and the upper limit of which is the temperature just below that at which the electrophotographic properties begin to change.
Claim 2
Independent Claim
116 words
A method for producing an amorphous electrophotographic recording material of selenium, selenium compounds, or alloys with selenium, wherein the selenium, selenium compounds, or alloys with selenium are present only in amorphous form, by depositing the recording material on a conductive carrier, comprising the steps of applying, by vapor depositing, a photoconductive layer on the conductive carrier at a first temperatuure range below the glass transformation temperature, and then heating the photoconductive layer on the conductive carrier at a higher second temperature range the lower limit of which is the glass transformation temperature of the photoconductive layer and the upper limit of which is the temperature just below that at which the electrophotographic properties begin to change.
Claim 3
Dependent Claim
32 words
A method as defined in claim 1 wherein an intermediate layer is first applied onto the conductive carrier and then the recording material is applied to the carrier via said intermediate layer.
Claim 4
Dependent Claim
32 words
A method as defined in claim 1 wherein the step of applying a photoconductive layer is performed at a pressure of about 10 - 4 to 10 - 6 Torr by vapor-deposition.
Claim 5
Dependent Claim
22 words
A method as defined in claim 1 wherein the photoconductive layer is applied at a deposition rate of several microns per minute.
Claim 6
Dependent Claim
21 words
A method as defined in claim 1 wherein the step of heating has a duration of about 15 to 60 minutes.
Claim 7
Dependent Claim
47 words
A method as defined in claim 1 wherein during the step of applying, a photoconductive layer of pure selenium is vapor-deposited in a temperature range of from about 18 to 25° C and during the step of heating the temperature range is about 55 to 75° C.
Claim 8
Dependent Claim
49 words
A method as defined in claim 1 wherein during the step of applying, a photoconductive layer containing about 0.5 to 5% arsenic is vapor-deposited at a temperature range of about 18° to 25° C and during the step of heating the temperature range is about 60° to 150° C.
Claim 9
Dependent Claim
35 words
A method as defined in claim 1 wherein during the step of applying, a photoconductive layer of arsenic selenide (As 2 Se 3 ) is vapor-deposited at a temperature range of 0° to 100° C.
Claim 10
Dependent Claim
35 words
A method as defined in claim 1 wherein during the step of applying, a photoconductive layer of arsenic selenide (As 2 Se 3 ) is vapor-deposited at a temperature range of 18° to 25° C.
Claim 11
Dependent Claim
37 words
A method as defined in claim 1 wherein during the step of heating, a photoconductive layer of arsenic selenide (As 2 Se 3 ) is subjected to a thermal treatment at a temperature range above 180° C.
Claim 12
Dependent Claim
39 words
A method as defined in claim 1 wherein during the step of heating, a photoconductive layer of arsenic selenide (As 2 Se 3 ) is subjected to a thermal treatment at a temperature range between 200 and 250° C.
Claim 13
Dependent Claim
22 words
A method as defined in claim 1 wherein a compound or alloy of selenium with arsenic is applied as the photoconductive layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-03-07 | 1980-09-06 | 1981-03-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-03-07 | 1984-09-06 | 1985-03-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-03-07 | 1988-09-06 | 1989-03-08 | $7700.00 | Window Closed / Lapsed |