Patent US4297392A successfully refreshed from Google Patents.
US4297392A
Expired / Lapsed
US
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High frequency sputtering produces thin film amorphous silicon photoconductor
Assignee: Fujifilm Holdings Corp
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Filing: 1979-11-02
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Granted: 1981-10-27
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Expires: 1999-11-02
Abstract
Abstract In the course of producing a thin film of amorphous silicon by high frequency sputtering elemental silicon under an atmosphere containing at least hydrogen gas, the temperature of the base plate onto which the amorphous silicon is deposited is maintained at a temperature of about 50 DEG C. to 150 DEG C. The thus obtained silicon film possesses not only photoconductivity sufficient for use as a photoconductor but also a large difference between photoconductivity and dard conductivity. In addition, a photoconductor of an amorphous silicon thin film can be produced at low cost without environmental pollution problems.
Inventors
- 👤 Akio Higashi
- 👤 Kazuhiro Kawaziri
- 👤 Yosuke Nakajima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 10:22
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08235; G03G5/08278; H10F30/00; H10F30/10; H10F30/15; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
66 words
A photoconductor cell comprising a base plate; a light-sensitive layer on said base plate; and electrodes ohmically contacting said light-sensitive layer, wherein said light-sensitive layer comprises a thin film of amorphous silicon prepared by high frequency sputtering of elemental silicon under an atmosphere containing at least hydrogen onto said base plate, while maintaining the temperature of said base plate at about 50° C. to 150° C.
Claim 2
Dependent Claim
66 words
A photoconductor cell comprising a base plate; a light-sensitive layer on said base plate; and electrodes ohmically contacting said light-sensitive layer, wherein said light-sensitive layer comprises a thin film of amorphous silicon prepared by high frequency sputtering of elemental silicon under an atmosphere containing at least hydrogen onto said base plate, while maintaining the temperature of said base plate at about 50° C. to 150° C.
Claim 3
Dependent Claim
78 words
An electrophotographic element comprising a base plate with an electrically conductive surface; a light-sensitive layer on the electrically conductive surface of said base plate; and an electrically insulating layer on said light-sensitive layer, wherein said light-sensitive layer comprises a thin film of amorphous silicon prepared by high frequenty sputtering of elemental silicon under an atmosphere containing at least hydrogen onto said base plate, while maintaining the temperature of said base plate at about 50° C. to 150° C.
Claim 4
Dependent Claim
78 words
An electrophotographic element comprising a base plate with an electrically conductive surface; a light-sensitive layer on the electrically conductive surface of said base plate; and an electrically insulating layer on said light-sensitive layer, wherein said light-sensitive layer comprises a thin film of amorphous silicon prepared by high frequenty sputtering of elemental silicon under an atmosphere containing at least hydrogen onto said base plate, while maintaining the temperature of said base plate at about 50° C. to 150° C.
Claim 5
Dependent Claim
25 words
The photoconductor cell of claim 2, wherein the temperature of said base plate is maintained at a temperature of about 80° C. to 150° C.
Claim 6
Dependent Claim
22 words
The photoconductor cell of claim 1, wherein said thin film of amorphous silicon has a thickness of 0.05 microns to 100 microns.
Claim 7
Dependent Claim
25 words
The electrophotographic element of claim 2, wherein the temperature of said base plate is maintained at a temperature of about 80° C. to 150° C.
Claim 8
Dependent Claim
22 words
The electrophotographic element of claim 2, wherein said thin film of amorphous silicon has a thickness of 0.05 microns to 100 microns.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-10-26 | 1985-04-27 | 1985-10-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-10-26 | 1989-04-27 | 1989-10-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-10-26 | 1993-04-27 | 1993-10-27 | $7700.00 | Window Closed / Lapsed |