Patent US4288283A successfully refreshed from Google Patents.
US4288283A
Expired / Lapsed
US
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Method of forming a microscopic pattern
Assignee: Hitachi Ltd
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Filing: 1980-01-08
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Granted: 1981-09-08
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Expires: 2000-01-08
Abstract
Abstract A method of forming a microscopic pattern wherein the object to be etched is overlaid with a film made of a material which is highly immune to etching and further provided with a reflection reducing film. Thus, the reflection of the irradiating ultraviolet rays by the underlying layer is effectively prevented.
Inventors
- 👤 Hiroshi Umezaki
- 👤 Hideki Nishida
- 👤 Norikazu Tsumita
- 👤 Hirozi Yamada
- 👤 Katsuhiro Kaneko
- 👤 Nagatugu Koiso
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:13
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
103 words
A method of forming a microscopic pattern, comprising the steps of: (a) depositing a film to effect masking onto an object to-be-etched, (b) forming a reflection reducing film on said film to effect masking, (c) depositing a photoresist film onto said reflection reducing film, (d) forming a photoresist pattern by irradiating a desired portion of said photoresist film with light and thereafter conducing development, (e) removing the exposed part of said reflection reducing film and the masking film which is disposed underneath said exposed portion, by employing said photoresist pattern as a mask, and (f) removing the exposed part of said object to-be-etched.
Claim 2
Independent Claim
103 words
A method of forming a microscopic pattern, comprising the steps of: (a) depositing a film to effect masking onto an object to-be-etched, (b) forming a reflection reducing film on said film to effect masking, (c) depositing a photoresist film onto said reflection reducing film, (d) forming a photoresist pattern by irradiating a desired portion of said photoresist film with light and thereafter conducing development, (e) removing the exposed part of said reflection reducing film and the masking film which is disposed underneath said exposed portion, by employing said photoresist pattern as a mask, and (f) removing the exposed part of said object to-be-etched.
Claim 3
Dependent Claim
41 words
The method of forming a microscopic pattern according to claim 1, wherein the removal of said object to-be-etched is performed by a dry etching, and said film to effect masking is made of a material substantially immune against said dry etching.
Claim 4
Dependent Claim
28 words
The method of forming a microscopic pattern according to claim 1, wherein said reflection reducing film is formed by oxidizing a surface of said film to effect masking.
Claim 5
Dependent Claim
25 words
The method of forming a microscopic pattern according to claim 3, wherein the oxidation is performed by anodic oxidation or heating in an oxidizing atmosphere.
Claim 6
Dependent Claim
45 words
The method of forming a microscopic pattern according to claim 1, wherein the removal of said object to-be-etched is performed by physical dry etching, and said film to effect masking is selected from the group consisting of films substantially immune against said physical dry etching.
Claim 7
Dependent Claim
43 words
The method of forming a microscopic pattern according to claim 5, wherein said object to-be-etched is a permalloy film, and said film to effect masking is made of a material selected from the group consisting of Ti, Ta, Mo, Cr, W and Ni.
Claim 8
Dependent Claim
38 words
The method of forming a microscopic pattern according to claim 6, wherein said film to effect masking is made of Ti, and said reflection reducing film is TiO 2 film which has a thickness of about 20 μm.
Claim 9
Dependent Claim
32 words
The method of forming a microscopic pattern according to claim 1 wherein the reflection reducing film is formed by depositing a metal oxide on the surface of the film to effect masking.
Claim 10
Dependent Claim
44 words
The method of forming a microscopic pattern according to claim 1 wherein after the removal of the exposed part of said object to-be-etched, the remaining portions of the film to effect masking and the reflection reducing film are removed to form said microscopic pattern.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-09-07 | 1985-03-09 | 1985-09-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-09-07 | 1989-03-09 | 1989-09-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-09-07 | 1993-03-09 | 1993-09-08 | $7700.00 | Window Closed / Lapsed |