US4286280A
Expired / Lapsed
US
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Semiconductor integrated circuit device
Assignee: Hitachi Ltd
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Filing: 1979-11-06
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Granted: 1981-08-25
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Expires: 1999-11-06
Abstract
Abstract A semiconductor integrated circuit device including a power element and circuit elements for controlling the power element each provided on the same dielectric isolated substrate is disclosed in which the dielectric isolated substrate comprises a semiconductor monocrystalline region extending from one principal surface of the dielectric isolated substrate to the other principal surface, a plurality of semiconductor monocrystalline islands each exposed in a part thereof to the above-mentioned one principal surface, a semiconductor polycrystalline region for supporting the monocrystalline region and the monocrystalline islands, and an insulating film provided among the polycrystalline region and the monocrystalline islands and region; and in which the power element is formed in the monocrystalline region and the circuit elements for controlling the power element are formed in the monocrystalline islands.
Inventors
- 👤 Yoshitaka Sugawara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 03:24
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/113; H10D62/115; H10D10/00; H10D10/40; H10D10/421; H10D84/00; H10D84/101; H10D84/131; H10D84/60; H10D88/00; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/019; H10W10/10
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
155 words
A semiconductor integrated circuit device comprising: a semiconductor polycrystalline substrate having first and second principal surfaces on opposite sides of said polycrystalline substrate; a semiconductor monocrystalline region formed in said semiconductor polycrystalline substrate to extend from the first principal surface of said substrate to the second principal surface thereof, said semiconductor monocrystalline region having a first principal surface formed in the first principal surface of said polycrystalline substrate and a second principal surface formed in the second principal surface of the polycrystalline substrate; at least one semiconductor monocrystalline island formed in said semiconductor polycrystalline substrate adjacent to said monocrystalline region, said at least one monocrystalline island having a principal surface formed in said first principal surface of said polycrystalline substrate; and a dielectric film formed between said at least one semiconductor monocrystalline island and said semiconductor polycrystalline substrate to isolate said at least one semiconductor monocrystalline island from said polycrystalline substrate and said monocrystalline region.
Claim 2
Dependent Claim
155 words
A semiconductor integrated circuit device comprising: a semiconductor polycrystalline substrate having first and second principal surfaces on opposite sides of said polycrystalline substrate; a semiconductor monocrystalline region formed in said semiconductor polycrystalline substrate to extend from the first principal surface of said substrate to the second principal surface thereof, said semiconductor monocrystalline region having a first principal surface formed in the first principal surface of said polycrystalline substrate and a second principal surface formed in the second principal surface of the polycrystalline substrate; at least one semiconductor monocrystalline island formed in said semiconductor polycrystalline substrate adjacent to said monocrystalline region, said at least one monocrystalline island having a principal surface formed in said first principal surface of said polycrystalline substrate; and a dielectric film formed between said at least one semiconductor monocrystalline island and said semiconductor polycrystalline substrate to isolate said at least one semiconductor monocrystalline island from said polycrystalline substrate and said monocrystalline region.
Claim 3
Dependent Claim
45 words
A semiconductor integrated circuit device according to claim 1, wherein said device includes a plurality of said monocrystalline islands each of which has a dielectric film formed between itself and said polycrystalline substrate so that said plurality of monocrystalline islands are isolated from one another.
Claim 4
Dependent Claim
109 words
A semiconductor integrated circuit device according to claim 2, wherein one portion of said semiconductor monocrystalline region is isolated from said semiconductor polycrystalline substrate by a dielectric film which extends from said first principal surface of said polycrystalline substrate to a predetermined depth in said polycrystalline substrate toward said second principal surface of said substrate, and a second portion of said monocrystalline region is separated from said polycrystalline substrate by a pn junction which extends in said polycrystalline substrate from said second principal surface of said substrate to a depth in said substrate where it abuts to said dielectric film which isolates said first portion of said monocrystalline region.
Claim 5
Dependent Claim
44 words
A semiconductor integrated circuit device according to claim 1, wherein the vertical-structure element comprises a 4-layer semiconductor device having a cathode formed in the first principal surface of the monocrystalline region and an anode formed in the second principal surface of the monocrystalline region.
Claim 6
Dependent Claim
32 words
A semiconductor integrated circuit device according to claim 2, wherein said second principal surfaces of said polycrystalline substrate and said monocrystalline region are fixed to a heat sink through a solder layer.
Claim 7
Dependent Claim
38 words
A semiconductor integrated circuit device according to claim 2, wherein a power element is formed in said semiconductor monocrystalline region, and a circuit element for controlling said power element is formed in each of said semiconductor monocrystalline islands.
Claim 8
Dependent Claim
33 words
A semiconductor integrated circuit device according to claim 2, wherein a vertical-structure element is formed in said semiconductor monocrystalline region, and a lateral element is formed in each of said semiconductor monocrystalline islands.
Claim 9
Dependent Claim
29 words
A semiconductor integrated circuit device according to claim 2, wherein a recess is provided in at least a part of said second principal surface of said semiconductor monocrystalline region.
Claim 10
Dependent Claim
44 words
A semiconductor integrated circuit device according to claim 2, wherein one portion of said semiconductor monocrystalline region is isolated from said semiconductor polycrystalline substrate by dielectric film while another portion of said monocrystalline region is isolated from said polycrystalline substrate by a pn junction.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-08-24 | 1985-02-23 | 1985-08-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-08-24 | 1989-02-23 | 1989-08-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-08-24 | 1993-02-23 | 1993-08-25 | $7700.00 | Window Closed / Lapsed |