US3871007A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor integrated circuit
Assignee: Sony Corp
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Filing: 1969-12-02
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Granted: 1975-03-11
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Expires: 1989-12-02
Abstract
Abstract A semiconductor integrated circuit having a plurality of single crystal regions which are surrounded by vapor growth polycrystaline regions of higher resistivity than that of the single crystal regions.
Inventors
- 👤 Kinji Wakamiya
- 👤 Isamu Kobayashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:43
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10W; H10W10/00; H10W10/01; H10W10/041; H10W10/40; Y; Y10; Y10S; Y10S148/00; Y10S148/049; Y10S148/051; Y10S148/085; Y10S148/122; Y10S148/135; Y10S148/151
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
103 words
AN INTEGRATED CIRCUIT WAFER HAVING ISLANDS OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL SEPARATED FROM EACH OTHER BY POLYCRYSTALINE REGIONS COMPRISING A SUPPORTING LAYER OF HIGH RESISTIVITY POLYCRYSTALINE SILICON MATERIAL, A COMTINUOUS LAYER OF SEMICONDUCTOR MATERIAL HAVING REGIONS OF HIGH RESISTIVITY POLYCRYSTALINE SILICON MATERIAL FORMED OVER PREDETERMINED AREAS OF SAID SUPPORTING LAYER, AND MINOCRYSTALLINE REGIONS FORMED OVER THE REMAINING AREAS OF SAID SUPPORTING LAYER, SAID POLYACRYSTALLINE REGIONS AND SAID POLYCRYSTALINE SUPPORTING LAYER HAVING AN IMPURITY CONCENTRATION OF LESS THAN 7X10**17 ATOMS/CM3, SAID POLYCRYSTALLINE SUPPORTING LAYER AND SAID POLYCRYSTALLINE REGIONS OF SAID EPITAXIAL LAYER BEING THE SOLE MEANS OF ELECTRICALLY ISOLATING SAID MONOCRYSTALINE REGIONS FROM EACH OTHER.
Claim 2
Dependent Claim
103 words
AN INTEGRATED CIRCUIT WAFER HAVING ISLANDS OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL SEPARATED FROM EACH OTHER BY POLYCRYSTALINE REGIONS COMPRISING A SUPPORTING LAYER OF HIGH RESISTIVITY POLYCRYSTALINE SILICON MATERIAL, A COMTINUOUS LAYER OF SEMICONDUCTOR MATERIAL HAVING REGIONS OF HIGH RESISTIVITY POLYCRYSTALINE SILICON MATERIAL FORMED OVER PREDETERMINED AREAS OF SAID SUPPORTING LAYER, AND MINOCRYSTALLINE REGIONS FORMED OVER THE REMAINING AREAS OF SAID SUPPORTING LAYER, SAID POLYACRYSTALLINE REGIONS AND SAID POLYCRYSTALINE SUPPORTING LAYER HAVING AN IMPURITY CONCENTRATION OF LESS THAN 7X10**17 ATOMS/CM3, SAID POLYCRYSTALLINE SUPPORTING LAYER AND SAID POLYCRYSTALLINE REGIONS OF SAID EPITAXIAL LAYER BEING THE SOLE MEANS OF ELECTRICALLY ISOLATING SAID MONOCRYSTALINE REGIONS FROM EACH OTHER.
References Cited (Backward Citations)
US3320485A
Cited
US3335038A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-03-10 | 1978-09-09 | 1979-03-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-03-10 | 1982-09-09 | 1983-03-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-03-10 | 1986-09-09 | 1987-03-11 | $7700.00 | Window Closed / Lapsed |