US4281401A
Expired / Lapsed
US
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Semiconductor read/write memory array having high speed serial shift register access
Assignee: Texas Instruments Inc
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Filing: 1979-11-23
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Granted: 1981-07-28
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Expires: 1999-11-23
Abstract
Abstract A semiconductor memory device of the MOS/LSI type using an array of dynamic one-transistor cells has a high speed serial input/output system. A serial shift register having a number of stages equal to the number of columns in the memory cell array is split into two half registers connected to opposite sides of the columns by transfer gates. The bits in the register may be loaded into the columns of the array and thus to an addressed row of cells, or data in one entire addressed row of cells may be loaded into the shift register stages via the columns and transfer gates. For a write operation, data from external is loaded serially into the shift register, alternating bit by bit between the two half registers. For a read operation, data is serially shifted out of the register to external, again alternating between the half registers. The data register can be advanced at twice the clock frequency. The cell array can be addressed for refresh during the time that data is being shifted into or out of the serial register.
Inventors
- 👤 Donald J. Redwine
- 👤 Lionel S. White, Jr.
- 👤 G. R. Mohan Rao
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 05:09
CPC Classifications
G; G11; G11C; G11C8/00; G11C8/04; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/4063; G11C11/407; G11C11/409; G11C11/4096
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
143 words
A semiconductor memory device fabricated in a single MOS/LSI integrated semiconductor circuit, comprising: an array of M rows and N columns of random access type memory cells, where M and N are integral powers of two; N sense amplifiers each one connected to one of the columns; a serial shift register split into two separate registers, each separate register having N/2 stages, one stage associated with each of said columns; two separate sets of transfer means for loading bits into the two shift registers from alternate ones of said columns in response to a transfer signal; means for receiving an address from a source external to the device and for addressing the array for selecting one of the rows for actuation; and means for transmitting data serially out of said register to external, the data being alternated bit-by-bit from the two separate registers.
Claim 2
Dependent Claim
143 words
A semiconductor memory device fabricated in a single MOS/LSI integrated semiconductor circuit, comprising: an array of M rows and N columns of random access type memory cells, where M and N are integral powers of two; N sense amplifiers each one connected to one of the columns; a serial shift register split into two separate registers, each separate register having N/2 stages, one stage associated with each of said columns; two separate sets of transfer means for loading bits into the two shift registers from alternate ones of said columns in response to a transfer signal; means for receiving an address from a source external to the device and for addressing the array for selecting one of the rows for actuation; and means for transmitting data serially out of said register to external, the data being alternated bit-by-bit from the two separate registers.
Claim 3
Dependent Claim
39 words
A device according to claim 1 wherein the memory cells are of the dynamic read/write type which employ MOS transistors and capacitors, and the means for addressing actuates the gates of all transistors in a row of said cells.
Claim 4
Dependent Claim
37 words
A device according to claim 2 wherein the sets of transfer means comprise a plurality of transfer gates each connected between alternate ones of the column lines and one of said stages of the two separate registers.
Claim 5
Dependent Claim
23 words
A device according to claim 3 wherein means are provided for actuating the sense amplifiers for refresh separately from said means for loading.
Claim 6
Dependent Claim
19 words
A device according to claim 3 wherein the two separate registers are located on opposite sides of the array.
Claim 7
Dependent Claim
133 words
A semiconductor memory device fabricated in a single integrated semiconductor circuit, comprising: an array of rows and columns of read/write, random access type memory cells; a plurality of sense amplifiers each connected to one of the columns; a serial shift register split into two separate registers, each separate register having a number of stages equal to half the number of said columns; means for loading the contents of the shift register stages onto said columns and for loading bits from the columns into the shift register stages in response to a transfer signal; means for addressing the device for selecting one of the rows for actuation; and means for loading data serially into said serial shift register or serially out of said register, the data being alternated bit-by-bit between the two separate registers.
Claim 8
Dependent Claim
133 words
A semiconductor memory device fabricated in a single integrated semiconductor circuit, comprising: an array of rows and columns of read/write, random access type memory cells; a plurality of sense amplifiers each connected to one of the columns; a serial shift register split into two separate registers, each separate register having a number of stages equal to half the number of said columns; means for loading the contents of the shift register stages onto said columns and for loading bits from the columns into the shift register stages in response to a transfer signal; means for addressing the device for selecting one of the rows for actuation; and means for loading data serially into said serial shift register or serially out of said register, the data being alternated bit-by-bit between the two separate registers.
Claim 9
Dependent Claim
21 words
A device according to claim 6 wherein the memory cells are of the one-transistor dynamic type, employing MOS transistors and capacitors.
Claim 10
Dependent Claim
19 words
A device according to claim 6 wherein the two separate registers are located at opposite sides of the array.
Claim 11
Dependent Claim
23 words
A device according to claim 8 wherein means are provided for actuating the sense amplifiers for refresh separately from said means for loading.
Claim 12
Dependent Claim
27 words
A device according to claim 8 wherein the means for loading includes two separate sets of transfer devices connected between the stages and opposite column line halves.
References Cited (Backward Citations)
US3560940A
Cited
US4127899A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-07-27 | 1985-01-26 | 1985-07-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-07-27 | 1989-01-26 | 1989-07-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-07-27 | 1993-01-26 | 1993-07-28 | $7700.00 | Window Closed / Lapsed |