Patent US4271328A successfully refreshed from Google Patents.
US4271328A
Expired / Lapsed
US
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Photovoltaic device
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1980-03-14
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Granted: 1981-06-02
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Expires: 2000-03-14
Abstract
Abstract A photovoltaic device including a plurality of amorphous silicon unit cells each having a p-i-n structure layered in succession on a substrate made of stainless steel. A transparent electrically conductive layer, for withdrawing a photoelectromotive force in cooperation with the electrically conductive substrate, is formed on the uppermost unit cell, so that rays of light may be incident upon the photovoltaic device from the uppermost unit cell. Preferably, the thickness of the unit cells closer to the light incidence surface is selected to be less than the thickness of the unit cells farther from the light incident surface. Each of the unit cells is structured such that the n type, i type and p type layers are disposed in the above described order from the light incidence surface in terms of the impurity type.
Inventors
- 👤 Yoshihiro Hamakawa
- 👤 Hiroaki Okamoto
- 👤 Yoshiteru Nitta
- 👤 Toshio Adachi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 13:28
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F10/172; H10F71/00; H10F71/10; H10F71/103; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
103 words
A photovoltaic device, comprising: a substrate comprising an electrically conductive material, said substrate having a surface; a plurality of photoelectric converting unit cells laminated in succession on the surface of said substrate, each of said plurality of photoelectric converting unit cells including amorphous silicon layers comprising a p type layer, an i type layer and an n type layer; and an electrically conductive layer formed on the one of said plurality of photoelectric converting unit cells which is furthest from the surface of said substrate, one of said substrate and said electrically conductive layer comprising a radiation incident surface adapted for receiving radiation.
Claim 2
Dependent Claim
103 words
A photovoltaic device, comprising: a substrate comprising an electrically conductive material, said substrate having a surface; a plurality of photoelectric converting unit cells laminated in succession on the surface of said substrate, each of said plurality of photoelectric converting unit cells including amorphous silicon layers comprising a p type layer, an i type layer and an n type layer; and an electrically conductive layer formed on the one of said plurality of photoelectric converting unit cells which is furthest from the surface of said substrate, one of said substrate and said electrically conductive layer comprising a radiation incident surface adapted for receiving radiation.
Claim 3
Dependent Claim
28 words
A photovoltaic device in accordance with claim 1, wherein the thickness of each of said plurality of photoelectric converting unit cells is selected to be substantially the same.
Claim 4
Dependent Claim
26 words
A photovoltaic device in accordance with claim 1, wherein the thickness of each of said plurality of photoelectric converting unit cells is selected to be different.
Claim 5
Dependent Claim
48 words
A photovoltaic device in accordance with claim 3, wherein the thickness of said plurality of photoelectric converting unit cells closest to said radiation incident surface of said device is selected to be less than the thickness of the remaining ones of said plurality of photoelectric converting unit cells.
Claim 6
Dependent Claim
32 words
A photovoltaic device in accordance with claim 4, wherein the thickness of said plurality of photoelectric converting cells increases the further the photoelectric converting unit cell is from said radiation incident surface.
Claim 7
Dependent Claim
62 words
A photovoltaic device in accordance with claim 1, 2, 3, 4 or 5, wherein said electrically conductive layer comprises a radiation transparent material such that said electrically conductive layer is said radiation incident surface, and wherein said device is adapted to receive radiation from the one of said plurality of photoelectric converting unit cells which is closest to said electrically conductive layer.
Claim 8
Dependent Claim
61 words
A photovoltaic device in accordance with claim 1, 2, 3, 4 or 5, wherein said amorphous silicon layers of each of said plurality of photoelectric converting unit cells comprise an n type layer formed closest to said radiation incident surface, an i type layer formed on said n type layer, and a p type layer formed on said i type layer.
Claim 9
Dependent Claim
61 words
A photovoltaic device in accordance with claim 1, 2, 3, 4 or 5, wherein said amophous silicon layers of each of said plurality of photoelectric converting unit cells comprise a p type layer formed closest to said radiation incident surface, an i type layer formed on said p type layer, and an n type layer formed on said i type layer.
Claim 10
Dependent Claim
30 words
A photovoltaic device in accordance with claim 1, 2, 3, 4 or 5, wherein said substrate comprises an insulating substrate and an electrically conductive film formed on said insulating substrate.
Claim 11
Dependent Claim
42 words
A photovoltaic device in accordance with claim 9, wherein said insulating substrate and said electrically conductive film are both radiation transparent such that said substrate is said radiation incident surface, and wherein said device is adapted to receive radiation through said substrate.
Claim 12
Dependent Claim
108 words
A photovoltaic device, comprising: a substrate comprising an electrically conductive material, said substrate having a surface; a first photoelectric converting unit cell, having a surface, formed on the surface of said substrate; a second photoelectric converting unit cell, having a surface, formed on the surface of said first photoelectric converting unit cell; an electrically conductive layer formed on the surface of said second photoelectric converting unit cell; said electrically conductive layer comprising a radiation incident surface adpated for receiving radiation, each of said first and second photoelectric converting unit cells including amorphous silicon layers comprising a p type layer, an i type layer and an n type layer.
Claim 13
Dependent Claim
108 words
A photovoltaic device, comprising: a substrate comprising an electrically conductive material, said substrate having a surface; a first photoelectric converting unit cell, having a surface, formed on the surface of said substrate; a second photoelectric converting unit cell, having a surface, formed on the surface of said first photoelectric converting unit cell; an electrically conductive layer formed on the surface of said second photoelectric converting unit cell; said electrically conductive layer comprising a radiation incident surface adpated for receiving radiation, each of said first and second photoelectric converting unit cells including amorphous silicon layers comprising a p type layer, an i type layer and an n type layer.
Claim 14
Dependent Claim
109 words
A photovoltaic device, comprising: a substrate comprising an electrically conductive material, said substrate having an inner surface, said substrate comprising a radiation incident surface adapted for receiving radiation; a first photoelectric converting unit cell, having a surface, formed on the inner surface of said substrate; a second photoelectric converting unit cell, having a surface, formed on the surface of said first photoelectric converting unit cell; and an electrically conductive layer formed on the surface of said second photoelectric converting unit cell, each of said first and second photoelectric converting unit cells including amorphous silicon layers comprising a p type layer, an i type layer and an n type layer.
Claim 15
Dependent Claim
109 words
A photovoltaic device, comprising: a substrate comprising an electrically conductive material, said substrate having an inner surface, said substrate comprising a radiation incident surface adapted for receiving radiation; a first photoelectric converting unit cell, having a surface, formed on the inner surface of said substrate; a second photoelectric converting unit cell, having a surface, formed on the surface of said first photoelectric converting unit cell; and an electrically conductive layer formed on the surface of said second photoelectric converting unit cell, each of said first and second photoelectric converting unit cells including amorphous silicon layers comprising a p type layer, an i type layer and an n type layer.
Claim 16
Dependent Claim
30 words
A photovoltaic device as set forth in claim 11 or 12, wherein the thickness of said first and second photoelectric converting unit cells is selected to be substantially the same.
Claim 17
Dependent Claim
28 words
A photovoltaic device as set forth in claim 11 or 12, wherein the thickness of said first and second photoelectric converting unit cells is selected to be different.
Claim 18
Dependent Claim
31 words
A photovoltaic device as set forth in claim 11, wherein the thickness of said second photoelectric converting unit cell is less than the thickness of said first photoelectric converting unit cell.
Claim 19
Dependent Claim
31 words
A photovoltaic device as set forth in claim 12, wherein the thickness of said first photoelectric converting unit cell is less than the thickness of said second photoelectric converting unit cell.
Claim 20
Dependent Claim
112 words
A photovoltaic device as set forth in claim 11 or 15, wherein said amorphous silicon layers of said first photoelectric converting unit cell comprise: a first n type layer formed on the surface of said substrate; a first i type layer formed on said first n type layer; and a first n type layer formed on said first i type layer, and wherein said amorphous silicon layers of said second photoelectronic converting unit cell comprise: a second n type layer formed on said first p type layer; a second i type layer formed on said second n type layer; and a second p type layer formed on said second i type layer.
Claim 21
Dependent Claim
110 words
A photovoltaic device as set forth in claim 12, wherein said amorphous silicon layers of said first photoelectric converting unit cell comprise: a first p type layer formed on the surface of said substrate; a first i type layer formed on said first p type layer; and a first n type layer formed on said first i type layer, and wherein said amorphous silicon layers of said second photoelectric converting unit cell comprise: a second p type layer formed on said first n type layer; a second i type layer formed on said second p type layer; and a second n type layer formed on said second i type layer.
Claim 22
Dependent Claim
30 words
A photovoltaic device as set forth in claim 11, 12, 15 or 16, wherein said substrate comprises an insulating substrate and an electrically conductive film formed on said insulating substrate.
References Cited (Backward Citations)
US4015280A
Cited
US4206002A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-06-01 | 1984-12-01 | 1985-06-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-06-01 | 1988-12-01 | 1989-06-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-06-01 | 1992-12-01 | 1993-06-02 | $7700.00 | Window Closed / Lapsed |