US4206002A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Graded band gap multi-junction solar energy cell
Assignee: University of Pittsburgh
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Filing: 1977-12-21
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Granted: 1980-06-03
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Expires: 1997-12-21
Abstract
Abstract The specification discloses a solar cell having a graded band gap and a plurality of alternately active and inactive p-n junctions. The cell has a gradually changing monocrystalline structure of IIIA-VA compounds. The graded band gaps of the cell are the result of the gradually changing chemical composition of the cell's monocrystalline structure. The junctions are produced by conventional doping techniques.
Inventors
- 👤 Ananta G. Sabnis
- 👤 Richard A. Butera
- 👤 Zvi H. Meiksin
- 👤 K. S. V. L. Narasimhan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 06:50
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/13; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10S; Y10S438/00; Y10S438/936
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
260 words
A solar cell comprising: a. a substrate layer of a crystalline material (compound) selected from the group consisting of compounds of group III-A-V-A elements (element compounds); and b. a monocrystalline layer on said substrate (i) composed of material selected from the group consisting of III-A-V-A compounds (element compounds) such that the composition of the monocrystalline layer is continuously changing and of the general form A 1-x A' x B 1-y B' y where A and A' are group IIIA elements selected from the group consisting of Al, Ga and In, B and B' are group VA elements selected from the group consisting of P, As and Sb, 0≦x≦1 and 0≦y≦1 whereby progressively narrower (continuously changing) band gaps are provided; (ii) suitably doped to produce a plurality of alternately active and inactive junctions; and (iii) having a p-region on one side and n-region on the other side of each inactive junction, and an active region about each active junction, said active region being bounded by an n-region and a p-region such that (a) in each p-region and in each n-region the flow of carriers is dominated by the region's concentration gradient; (b) (in each and every p-region and in n-region) the net current (density) throughout the cell is the same; (c) the electric field in each active region is much stronger than the electric fields in the p-region and n-region adjacent to it; and (d) the width (length) of each (each) region between active junctions substantially equals the diffusion length of the electrons and holes generated in (each) each said region.
Claim 2
Dependent Claim
260 words
A solar cell comprising: a. a substrate layer of a crystalline material (compound) selected from the group consisting of compounds of group III-A-V-A elements (element compounds); and b. a monocrystalline layer on said substrate (i) composed of material selected from the group consisting of III-A-V-A compounds (element compounds) such that the composition of the monocrystalline layer is continuously changing and of the general form A 1-x A' x B 1-y B' y where A and A' are group IIIA elements selected from the group consisting of Al, Ga and In, B and B' are group VA elements selected from the group consisting of P, As and Sb, 0≦x≦1 and 0≦y≦1 whereby progressively narrower (continuously changing) band gaps are provided; (ii) suitably doped to produce a plurality of alternately active and inactive junctions; and (iii) having a p-region on one side and n-region on the other side of each inactive junction, and an active region about each active junction, said active region being bounded by an n-region and a p-region such that (a) in each p-region and in each n-region the flow of carriers is dominated by the region's concentration gradient; (b) (in each and every p-region and in n-region) the net current (density) throughout the cell is the same; (c) the electric field in each active region is much stronger than the electric fields in the p-region and n-region adjacent to it; and (d) the width (length) of each (each) region between active junctions substantially equals the diffusion length of the electrons and holes generated in (each) each said region.
Claim 3
Dependent Claim
14 words
The solar cell claimed in claim 1 having been produced with molecular beam epitaxy.
Claim 4
Dependent Claim
56 words
The solar cell claimed in claim 1 wherein said monocrystalline layer comprises in sequence doped cross-sectional areas of GaP 0 .85 Sb 0 .15, GaP 0 .67 Sb 0 .32, GaP 0 .47 Sb 0 .53, GaP 0 .28 Sb 0 .72, GaP 0 .09 Sb 0 .91, and Ga 0 .75 In 0 .25 Sb.
Claim 5
Dependent Claim
53 words
The solar cell claimed in claim 1 wherein said monocrystalline layer comprises in sequence doped cross-sectional areas of Al 0 .8 Ga 0 .2 As, Al 0 .44 Ga 0 .56 As, GaAs, GaAs 0 .6 Sb 0 .4, GaAs 0 .24 Sb 0 .76, and Ga 0 .54 In 0 .46 Sb.
Claim 6
Dependent Claim
18 words
The solar cell claimed in claim 1 also comprising contacts attached to the substrate and the monocrystalline compound.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-06-03 | 1983-12-03 | 1984-06-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-06-03 | 1987-12-03 | 1988-06-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-06-03 | 1991-12-03 | 1992-06-03 | $7700.00 | Window Closed / Lapsed |