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US4269652A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for growing crystalline materials

Assignee: Honeywell International Inc
•
Filing: 1978-11-06
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Granted: 1981-05-26
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Expires: 1998-11-06
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Abstract

Abstract Improvement in the method for growing crystalline materials by seed pulling from a melt whereby crystalline product produced is substantially free of voids and/or inclusions which were previously caused by the continuous feeding operation. The improved method comprises feeding the source material through a bed of particulate refractory material whereby entrained gases in the melting feed material are eliminated thereby resulting in a crystalline product which is substantially free of voids and inclusions.

Inventors

  • 👤 Paul J. Yancey

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-23 22:24
CPC Classifications
C; C30; C30B; C30B27/00; C30B27/02; C30B15/00; C30B15/005; C30B15/02; C30B15/34

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 106 words
In the method of growing crystalline material from a melt comprising providing and maintaining a liquid reservoir supply of said material by feeding a supply of said material in solid form to said reservoir while melting the contents of the reservoir to form a liquid material, contacting a seed with said liquid material and causing said liquid material to solidify on said seed; the improvement which comprises feeding the supply of solid material onto a stationary bed of particulate refractory metal which is in communication with said reservoir whereby said solid material melts in contact with said bed to provide and maintain said liquid reservoir supply.
Claim 2
Dependent Claim 106 words
In the method of growing crystalline material from a melt comprising providing and maintaining a liquid reservoir supply of said material by feeding a supply of said material in solid form to said reservoir while melting the contents of the reservoir to form a liquid material, contacting a seed with said liquid material and causing said liquid material to solidify on said seed; the improvement which comprises feeding the supply of solid material onto a stationary bed of particulate refractory metal which is in communication with said reservoir whereby said solid material melts in contact with said bed to provide and maintain said liquid reservoir supply.
Claim 3
Dependent Claim 52 words
The process according to claim 1 in which said liquid material is fed from said reservoir by capillary action to the surface of a product-shaping member to establish a liquid film of said material in which the seed is contacted with the liquid material fed to the surface of the product-shaping member.
Claim 4
Dependent Claim 13 words
The process according to claim 2 in which the crystalline material is sapphire.
Claim 5
Dependent Claim 27 words
The process according to claim 2 in which the particulate refractory metal is selected from the group consisting of W, Mo, Ta, Ir, Rh and alloys thereof.
Claim 6
Dependent Claim 13 words
The process according to claim 2 in which the refractory metal is W.
Claim 7
Dependent Claim 13 words
The process according to claim 2 in which the refractory metal is Mo.
Claim 8
Dependent Claim 23 words
The process according to claim 2 in which the size of the particulate refractory metal is from about -4 to about +40 mesh.
Claim 9
Dependent Claim 23 words
The process according to claim 2 in which the size of the particulate refractory metal is from about -8 to about +40 mesh.
Claim 10
Dependent Claim 13 words
The process according to claim 2 in which the crystalline material is sapphire.
Claim 11
Dependent Claim 18 words
The process according to claim 9 in which the particulate refractory metal is selected from W and Mo.
Claim 12
Dependent Claim 14 words
The process according to claim 10 in which the particulate refractory metal is Mo.

References Cited (Backward Citations)

US2850372A Cited
US3471266A Cited
US3591348A Cited
US3795487A Cited
US3701636A Cited
US3954551A Cited
US4090851A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1984-05-25 1984-11-24 1985-05-26 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1988-05-25 1988-11-24 1989-05-26 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1992-05-25 1992-11-24 1993-05-26 $7700.00 Window Closed / Lapsed

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