Patent US3985951A successfully refreshed from Google Patents.
US4090851A
Expired / Lapsed
US
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Si3 N4 Coated crucible and die means for growing single crystalline silicon sheets
Assignee: RCA Corp
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Filing: 1976-10-15
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Granted: 1978-05-23
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Expires: 1996-10-15
Abstract
Abstract Mechanical components, e.g. die and/or crucible or the like structures with which single silicon crystals are grown from the melt as shaped articles in thin sheet or ribbon geometry, are advantageously comprised, for their material of construction, of a suitable thermally stable and inert foundation substrate coated or provided on at least the silicon-contacting surface(s) thereof with a thin, uniform, integral surface layer deposit of pyrolitic silicon nitride (Si 3 N 4 ) obtained by the chemical vapor deposition (i.e., "CVD") technique.
Inventors
- 👤 Samuel Berkman
- 👤 Kyong-Min Kim
- 👤 Harold Edgar Temple
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 10:46
CPC Classifications
C; C30; C30B; C30B15/00; C30B15/34; C30B15/08; C30B15/20; C30B15/22; C30B15/24; Y; Y10; Y10S; Y10S117/00; Y10S117/90; Y10T; Y10T117/00; Y10T117/10; Y10T117/1024; Y10T117/1032; Y10T117/1036; Y10T117/1044
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
163 words
In an apparatus for growing single crystal thin sheets of silicon by seed pulling from a melt contained in a crucible through a forming die comprising a crucible for molten silicon and a die for shaping the growing crystal extending into contact with the melt, the improvement which comprises coating the surfaces of said crucible and said die which come in contact with said silicon melt with a protective layer of pyrolitic silicon nitride applied by chemical vapor deposition to form a non-porous non-wetting Si 3 N 4 coating thereon, said crucible and die being made of a refractory material selected from the group consisting of graphite, quartz, boron nitride, ceramic-bonded and sintered silicon nitride compositions, molybdemum, tantalum, and tungsten, said refractory material having a thermal coefficient of expansion about the same as that of Si 3 N 4 , said Si 3 N 4 coating having an average thickness of between about 25 × 10 -4 and 25 × 10 -3 cm.
Claim 2
Dependent Claim
163 words
In an apparatus for growing single crystal thin sheets of silicon by seed pulling from a melt contained in a crucible through a forming die comprising a crucible for molten silicon and a die for shaping the growing crystal extending into contact with the melt, the improvement which comprises coating the surfaces of said crucible and said die which come in contact with said silicon melt with a protective layer of pyrolitic silicon nitride applied by chemical vapor deposition to form a non-porous non-wetting Si 3 N 4 coating thereon, said crucible and die being made of a refractory material selected from the group consisting of graphite, quartz, boron nitride, ceramic-bonded and sintered silicon nitride compositions, molybdemum, tantalum, and tungsten, said refractory material having a thermal coefficient of expansion about the same as that of Si 3 N 4 , said Si 3 N 4 coating having an average thickness of between about 25 × 10 -4 and 25 × 10 -3 cm.
Claim 3
Dependent Claim
23 words
Apparatus according to claim 1, wherein said Si 3 N 4 coating has an average thickness of about 12.5 × 10 -3 cm.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-05-22 | 1981-11-21 | 1982-05-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-05-22 | 1985-11-21 | 1986-05-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-05-22 | 1989-11-21 | 1990-05-23 | $7700.00 | Window Closed / Lapsed |