Self-pulsed microwave power amplifier

Claim 2

A self-pulsed microwave power amplifier for a radar transmitter, comprising a first and at least a second amplifying field effect transistor, each having source, drain, and gate portions, means for coupling the gate portion of the first transistor to the transmitter output, means for coupling the gate portion of the second transistor to one of the source and drain portions of the first transistor, means operative to bias the firsrt amplifying transistor at a voltage approximately no greater than its pinch-off voltage to cause said first transistor to provide approximately no greater than class B amplification in response to the presence of each RF input pulse from the transmitter, a switching transistor, means including the switching transistor responsive to the average current in one of the source and drain portions of the first transistor to bias the second transistor at a voltage sufficient to cause the second amplifying transistor to provide class A amplification, whereby the second amplifying transistor conducts during the full cycle of the RF signal from the output of the first amplifying transistor while the switching transistor is conducting.

Claim 3

A power amplifier according to claim 1 wherein the first and second amplifying transistors are depletion mode field effect transistors.

Claim 4

A power amplifier according to claim 1 or 2 wherein the switching transistor is a bipolar transistor.

Claim 5

A power amplifier according to claim 1 or 2 wherein the first amplifying transistor is a low power transistor, and the second amplifying transistor is a medium power transistor.

Claim 6

A power amplifier according to claim 1 wherein the means that includes the switching transistor is governed by the nonconduction of the switching transistor to bias the second amplifying transistor substantially at its pinch-off voltage.

Claim 7

A microwave power amplifier, comprising a first and at least a second field effect amplifying transistor, first means operatively connected to the first amplifying transistor to cause said transistor to conduct approximately during every other half cycle of an RF input signal applied thereto in response to the presence of such RF signal, a switching transistor, second means including a dropping resistor and a transformer having a primary winding electrically connected to one of the source and drain portions of the first amplifying transistor, said transformer having at least one secondary winding operatively connected to the switching transistor to cause said switching transistor to conduct in response to an increased voltage, said voltage in the primary winding being caused by conduction of the first amplifying transistor, third means operatively connecting the switching transistor to the second amplifying transistor to cause said second transistor to conduct a predetermined level of output current in response to the conducting of the switching transistor, and fourth means operatively connecting the first and second amplifying transistors to apply the amplified output signal from the first transistor to the second transistor, whereby the second amplifying transistor conducts during the full cycle of the RF signal from the output of the first amplifying transistor while the switching transistor is conducting.

Claim 8

A microwave power amplifier, comprising a first and at least a second field effect amplifying transistor, first means operatively connected to the first amplifying transistor to cause said transistor to conduct approximately during every other half cycle of an RF input signal applied thereto in response to the presence of such RF signal, a switching transistor, second means including a dropping resistor and a transformer having a primary winding electrically connected to one of the source and drain portions of the first amplifying transistor, said transformer having at least one secondary winding operatively connected to the switching transistor to cause said switching transistor to conduct in response to an increased voltage, said voltage in the primary winding being caused by conduction of the first amplifying transistor, third means operatively connecting the switching transistor to the second amplifying transistor to cause said second transistor to conduct a predetermined level of output current in response to the conducting of the switching transistor, and fourth means operatively connecting the first and second amplifying transistors to apply the amplified output signal from the first transistor to the second transistor, whereby the second amplifying transistor conducts during the full cycle of the RF signal from the output of the first amplifying transistor while the switching transistor is conducting.

Claim 9

A power amplifier according to claim 6 wherein the second means includes means to cause said second transistor to conduct at approximately one-half its maximum drain current in response to the conducting of the switching transistor.