US4008442A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Signal amplifier circuit with a field effect transistor having current unsaturated triode vacuum tube characteristics
Assignee: Toshiba Corp
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Filing: 1975-06-10
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Granted: 1977-02-15
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Expires: 1995-06-10
Abstract
Abstract A signal amplifier circuit using a field effect transistor having current unsaturated characteristics like a triode vacuum tube. The field effect transistor has drain and source electrodes coupled respectively through drain and source resistors to first and second different potential points between which a supply voltage may be applied. In the present invention the first potential point is coupled to the source electrode of the field effect transistor by an impedance means to render the signal amplifier circuit insensitive to variation in the supply voltage. The impedance means may be an active or passive element such as a bipolar transistor or resistor.
Inventors
- 👤 Shigeru Todokoro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 18:26
CPC Classifications
H; H03; H03F; H03F3/00; H03F3/34; H03F3/343; H03F3/345; H03F3/04; H03F3/16; H03F3/181; H03F3/183; H03F3/185; H03F3/1855
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
167 words
A signal amplifier comprising: first and second different potential points; a field effect transistor having gate, drain and source electrodes and displaying current unsaturated triode vacuum tube characteristics; a bipolar transistor having collector, emitter and base electrodes, the collector and emitter electrodes of said transistor being coupled to said first potential point and said source electrode of said field effect transistor, respectively; first resistive impedance means coupled between said first potential point and said drain electrode of said field effect transistor; second resistive impedance means coupled between said second potential point and said source electrode of said field effect transistor; third resistive impedance means coupled between said first potential point and said base electrode of said bipolar transistor; and fourth resistive impedance means coupled between said second potential point and said base electrode of said bipolar transistor, said third resistive impedance means having a resistive value which substantially equals that of said fourth resistive impedance means multiplied by the voltage amplification factor of said field effect transistor.
Claim 2
Dependent Claim
167 words
A signal amplifier comprising: first and second different potential points; a field effect transistor having gate, drain and source electrodes and displaying current unsaturated triode vacuum tube characteristics; a bipolar transistor having collector, emitter and base electrodes, the collector and emitter electrodes of said transistor being coupled to said first potential point and said source electrode of said field effect transistor, respectively; first resistive impedance means coupled between said first potential point and said drain electrode of said field effect transistor; second resistive impedance means coupled between said second potential point and said source electrode of said field effect transistor; third resistive impedance means coupled between said first potential point and said base electrode of said bipolar transistor; and fourth resistive impedance means coupled between said second potential point and said base electrode of said bipolar transistor, said third resistive impedance means having a resistive value which substantially equals that of said fourth resistive impedance means multiplied by the voltage amplification factor of said field effect transistor.
Claim 3
Dependent Claim
194 words
A signal amplifier circuit comprising: input and output terminals; first and second power supply terminals; a first field effect transistor having gate, drain and source electrodes and displaying current unsaturated triode vacuum tube characteristics, said gate electrode of said first field effect transistor being coupled to said input terminal; a second field effect transistor having gate, drain and source electrodes and displaying current unsaturated triode vacuum tube characteristics, and said gate electrode of said second transistor being coupled to said drain electrode of said first transistor, said drain electrode of said second transistor being coupled to said first power supply terminal, and said source electrode of said second transistor being coupled to said output terminal; first resistive impedance means coupled between said drain electrode of said first transistor and said output terminal; second resistive impedance means coupled between said source electrode of said first transistor and said second power supply terminal; and third resistive impedance means coupled between said source electrode of said first transistor and said output terminal and having a resistance value which substantially equals that of said second resistive impedance means multiplied by the voltage amplification factor of said first transistor.
Claim 4
Dependent Claim
194 words
A signal amplifier circuit comprising: input and output terminals; first and second power supply terminals; a first field effect transistor having gate, drain and source electrodes and displaying current unsaturated triode vacuum tube characteristics, said gate electrode of said first field effect transistor being coupled to said input terminal; a second field effect transistor having gate, drain and source electrodes and displaying current unsaturated triode vacuum tube characteristics, and said gate electrode of said second transistor being coupled to said drain electrode of said first transistor, said drain electrode of said second transistor being coupled to said first power supply terminal, and said source electrode of said second transistor being coupled to said output terminal; first resistive impedance means coupled between said drain electrode of said first transistor and said output terminal; second resistive impedance means coupled between said source electrode of said first transistor and said second power supply terminal; and third resistive impedance means coupled between said source electrode of said first transistor and said output terminal and having a resistance value which substantially equals that of said second resistive impedance means multiplied by the voltage amplification factor of said first transistor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-02-15 | 1980-08-16 | 1981-02-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-02-15 | 1984-08-16 | 1985-02-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-02-15 | 1988-08-16 | 1989-02-15 | $7700.00 | Window Closed / Lapsed |