US4268607A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of patterning a resist layer for manufacture of a semiconductor element
Assignee: Toshiba Corp
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Filing: 1978-12-18
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Granted: 1981-05-19
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Expires: 1998-12-18
Abstract
Abstract A method of patterning a radiation-sensitive resist layer for manufacture of a semiconductor element which uses a radiation-sensitive resist layer formed of at least one of the radiation sensitive materials whose compositions are expressed by any of the following general structural formulas: ##STR1## wherein: R 1 =methyl group, halogenated methyl group, cyano group or halogen element R 2 =alkyl group or alkoxy alkyl group having 6 or less carbon atoms in which at least one hydrogen is substituted by chlorine or bromine n=an integer of 1 or larger, thereby forming an resist pattern with high precision.
Inventors
- 👤 Tsukasa Tada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 05:25
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/039
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
150 words
A method of patterning a radiation-sensitive positive resist layer for manufacture of a semiconductor element which comprises the steps of applying at least one homopolymer of the radiation-sensitive materials having a structural formula selected from the group consisting of: ##STR3## where: R 1 is a methyl group, a halogenated methyl group, a cyano group or a halogen; R 2 is an alkyl group or an alkoxy alkyl group having 6 or less carbon atoms in which at least one hydrogen is substituted by chlorine or bromine; and n is an integer of 1 or larger on a substrate to form a radiation-sensitive resist layer; heating the resist layer to cross-link said radiation-sensitive material and render it insoluble in a solvent; projecting radiation on the cross-linked resist layer to draw a desired pattern; and developing said resist layer to eliminate those portions of the resist layer which were bombarded with radiation.
Claim 2
Independent Claim
150 words
A method of patterning a radiation-sensitive positive resist layer for manufacture of a semiconductor element which comprises the steps of applying at least one homopolymer of the radiation-sensitive materials having a structural formula selected from the group consisting of: ##STR3## where: R 1 is a methyl group, a halogenated methyl group, a cyano group or a halogen; R 2 is an alkyl group or an alkoxy alkyl group having 6 or less carbon atoms in which at least one hydrogen is substituted by chlorine or bromine; and n is an integer of 1 or larger on a substrate to form a radiation-sensitive resist layer; heating the resist layer to cross-link said radiation-sensitive material and render it insoluble in a solvent; projecting radiation on the cross-linked resist layer to draw a desired pattern; and developing said resist layer to eliminate those portions of the resist layer which were bombarded with radiation.
Claim 3
Dependent Claim
27 words
The method according to claim 1, wherein the radiation-sensitive resist material is selected from the group consisting of poly(trichloroethyl methacrylate), poly(1-methoxy-2,2,2-trichloroethyl methacrylate), poly(α-chloro-trichloroethyl acrylate) and poly(isopropenyl trichloroacetate).
Claim 4
Dependent Claim
25 words
The method according to claim 1 or 2, wherein the radiation-sensitive resist material has an average molecular weight ranging between about 100,000 and about 800,000.
Claim 5
Dependent Claim
29 words
The method according to claim 1, wherein the radiation-sensitive resist material is cross-linked by heating for 30 to 90 minutes at a temperature ranging from 160° to 220° C.
Claim 6
Dependent Claim
26 words
The method according to claim 1, wherein the desired pattern is drawn by irradiating electron beams at a dosage of 1 to 10 μc/cm 2 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-05-18 | 1984-11-17 | 1985-05-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-05-18 | 1988-11-17 | 1989-05-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-05-18 | 1992-11-17 | 1993-05-19 | $7700.00 | Window Closed / Lapsed |