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US4268538A
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High-pressure, high-temperature gaseous chemical method for silicon oxidation
Assignee: GaSonics Inc
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Filing: 1979-03-29
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Granted: 1981-05-19
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Expires: 1999-03-29
Abstract
Abstract Apparatus and method for growing oxide on silicon wafers or silicon-coated wafers or other semiconductors for the semiconductor industry wherein the oxide growth is produced under high pressure and high temperature conditions within a reaction chamber by oxidizing gases which are maintained in a continuous flow condition into and through the chamber.
Inventors
- 👤 Monte M. Toole
- 👤 Raphael Klein
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 09:50
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B33/00; C30B33/005; H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
56 words
A high-pressure, high-temperature silicon oxidation process comprising: mounting silicon wafers to be oxidized in an enclosed quartz-walled reaction chamber mounted within a pressure chamber; heating said reaction chamber; pressurizing said reaction chamber with oxygen and hydrogen gases; and pressurizing said pressure chamber with a gas to equalize the pressure across the wall of said reaction chamber.
Claim 2
Dependent Claim
56 words
A high-pressure, high-temperature silicon oxidation process comprising: mounting silicon wafers to be oxidized in an enclosed quartz-walled reaction chamber mounted within a pressure chamber; heating said reaction chamber; pressurizing said reaction chamber with oxygen and hydrogen gases; and pressurizing said pressure chamber with a gas to equalize the pressure across the wall of said reaction chamber.
Claim 3
Dependent Claim
28 words
The process of claim 1, and providing a continuous flow of said oxygen and hydrogen gases into and through said reaction chamber while maintaining the pressurized condition therein.
Claim 4
Dependent Claim
37 words
The process of claim 2: initially pressurizing said reaction chamber with essentially oxygen gas; thereafter pressurizing said reaction chamber with the combination of oxygen and hydrogen gases; and thereafter pressurizing said reaction chamber with essentially nitrogen gas.
Claim 5
Dependent Claim
21 words
The process of claim 3, and introducing hydrogen chloride gas into said reaction chamber during at least one of said steps.
Claim 6
Dependent Claim
21 words
The process of claim 2, and controlling said flow of oxygen and hydrogen gases into said chamber through critical sonic orifices.
Claim 7
Dependent Claim
24 words
The process of claim 5, and providing a controlled gas ratio flow through a critical sonic orifice of inert gas into said reaction chamber.
Claim 8
Dependent Claim
10 words
The process of claim 6, said inert gas being nitrogen.
Claim 9
Dependent Claim
18 words
The process of claim 7, and including the step of purging said reaction chamber with said inert gas.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-05-18 | 1984-11-17 | 1985-05-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-05-18 | 1988-11-17 | 1989-05-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-05-18 | 1992-11-17 | 1993-05-19 | $7700.00 | Window Closed / Lapsed |