US4268537A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing a self-aligned contact in a grooved semiconductor surface
Assignee: Intersil Corp
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Filing: 1979-12-03
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Granted: 1981-05-19
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Expires: 1999-12-03
Abstract
Abstract An apertured mask is formed on a major surface of a semiconductor substrate, and a groove is generated in the semiconductor in an area exposed by the aperture. A layer of electrode material is then formed on the groove surface, the layer extending beyond the groove and onto the mask. The mask is then stripped, and those portions of the electrode material extending beyond the groove are removed.
Inventors
- 👤 Lawrence A. Goodman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 02:20
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/025; H10D64/027
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
75 words
A method for fabricating a contact aligned within a groove, comprising: providing a semiconductor substrate having a first major surface; forming an apertured mask on the first surface; generating a groove in the first surface in an area exposed by the aperture; forming a layer of electrode material on the groove surface, said layer extending beyond the groove and onto the mask; stripping the mask; and removing the electrode material which extends beyond the groove.
Claim 2
Independent Claim
75 words
A method for fabricating a contact aligned within a groove, comprising: providing a semiconductor substrate having a first major surface; forming an apertured mask on the first surface; generating a groove in the first surface in an area exposed by the aperture; forming a layer of electrode material on the groove surface, said layer extending beyond the groove and onto the mask; stripping the mask; and removing the electrode material which extends beyond the groove.
Claim 3
Dependent Claim
26 words
A method in accordance with claim 1 further comprising delineating the electrode material to an area substantially confined to the groove prior to stripping the mask.
Claim 4
Dependent Claim
43 words
A method in accordance with claim 2 wherein the electrode material is delineated by: depositing a layer of photoresist across the electrode material; removing the photoresist from areas not in proximity to the groove; and removing the electrode material not covered with photoresist.
Claim 5
Dependent Claim
23 words
A method in accordance with claim 3 further comprising stripping the photoresist prior to removing the electrode material which extends beyond the groove.
Claim 6
Dependent Claim
22 words
A method in accordance with claim 3 further comprising stripping the photoresist after removing the electrode material which extends beyond the groove.
Claim 7
Dependent Claim
22 words
A method in accordance with claim 1 further comprising forming an insulating layer within the groove prior to forming the electrode material.
Claim 8
Dependent Claim
19 words
A method in accordance with claim 6 wherein the substrate is silicon and the insulating layer is silicon oxide.
Claim 9
Dependent Claim
13 words
A method in accordance with claim 1 wherein the groove is substantially V-shaped.
Claim 10
Independent Claim
101 words
A method for fabricating a contact aligned within a groove, comprising: providing a semiconductor substrate having a first major surface; forming an apertured mask, comprising a first mask layer on the first surface, and a second mask layer disposed over and coincident with the first mask layer; generating a groove in the first surface in an area exposed by the aperture; forming a layer of electrode material on the groove surface, said layer extending beyond the groove and onto the mask; stripping the second mask layer; removing the electrode material which extends beyond the groove; and stripping the first mask layer.
Claim 11
Independent Claim
101 words
A method for fabricating a contact aligned within a groove, comprising: providing a semiconductor substrate having a first major surface; forming an apertured mask, comprising a first mask layer on the first surface, and a second mask layer disposed over and coincident with the first mask layer; generating a groove in the first surface in an area exposed by the aperture; forming a layer of electrode material on the groove surface, said layer extending beyond the groove and onto the mask; stripping the second mask layer; removing the electrode material which extends beyond the groove; and stripping the first mask layer.
Claim 12
Dependent Claim
21 words
A method in accordance with claim 9 wherein the first mask layer is silicon oxide and is approximately 500-5000 angstroms thick.
Claim 13
Dependent Claim
21 words
A method in accordance with claim 9 wherein the second mask layer is silicon nitride and is approximately 1000-6000 angstroms thick.
Claim 14
Dependent Claim
22 words
A method in accordance with claim 9 further comprising a relatively thin interposed layer disposed between the first and second mask layers.
Claim 15
Dependent Claim
26 words
A method in accordance with claim 12 wherein the first and second mask layers are silicon oxide, and the relatively thin interposed layer is silicon nitride.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-05-18 | 1984-11-17 | 1985-05-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-05-18 | 1988-11-17 | 1989-05-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-05-18 | 1992-11-17 | 1993-05-19 | $7700.00 | Window Closed / Lapsed |