Photoresist O-quinone diazide containing composition and resist mask formation process

Claim 1

A process for forming a positive resist mask comprising: providing a layer which includes a mixture consisting essentially of an alkali soluble novolac or resole resin, a light sensitive diazo compound having the general formula; ##STR2## in which R 1 is a naphthoquinone-(1,2)-diazide radical, R 2 is selected from the group consisting of hydrogen and hydroxyl, and R 3 is selected from the group consisting of hydrogen, alkyl, aryl, alkoxy, amino and heterocyclic groups, and from about 3 to 30 percent by weight, based on the total weight of resist solids, of a thermally activated free radical initiator selected from the group consisting of acyl peroxides, peresters, hydroperoxides, alkyl peroxides, and azo-bis-(isobutyronitrile) on a substrate, exposing said layer patternwise to actinic radiation, removing the exposed portions of said layer with an alkaline developer solution, to form a resist pattern on said substrate and heating said resist pattern at a temperature above the second order glass transition temperature of said resin which activates said initiator to cross link said layer so as to inhibit flow of said resist pattern.