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US4254426A
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Method and structure for passivating semiconductor material
Assignee: RCA Corp
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Filing: 1979-05-09
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Granted: 1981-03-03
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Expires: 1999-05-09
Abstract
Abstract A structure for passivating semiconductor material comprises a substrate of crystalline semiconductor material, a relatively thin film of carbon disposed on a surface of the crystalline material, and a layer of hydrogenated amorphous silicon deposited on the carbon film.
Inventors
- 👤 Jacques I. Pankove
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 20:26
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/137; H10W74/01; H10W74/40; H10W74/481; Y; Y10; Y10S; Y10S438/00; Y10S438/958
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
42 words
In a method of passivating semiconductor material wherein a surface of a crystalline semiconductor substrate is coated with a layer of hydrogenated amorphous silicon, the improvement comprising depositing a film containing carbon atoms onto said surface prior to performing said coating step.
Claim 2
Dependent Claim
42 words
In a method of passivating semiconductor material wherein a surface of a crystalline semiconductor substrate is coated with a layer of hydrogenated amorphous silicon, the improvement comprising depositing a film containing carbon atoms onto said surface prior to performing said coating step.
Claim 3
Dependent Claim
17 words
A method as recited in claim 1 wherein said film comprises a thin film of amorphous carbon.
Claim 4
Dependent Claim
31 words
A method as recited in claim 2 wherein said depositing step is performed by utilizing a carbon arc at a pressure below atmospheric pressure to evaporate carbon atoms onto said surface.
Claim 5
Dependent Claim
22 words
A method as recited in claim 1 wherein said film comprises a film of hydrogenated carbon having the formula CH x .
Claim 6
Dependent Claim
21 words
A method as recited in claim 4 wherein said depositing step is performed by decomposing a hydrocarbon utilizing a glow discharge.
Claim 7
Dependent Claim
16 words
A method as recited in claim 1 wherein said film comprises a thin film of graphite.
Claim 8
Dependent Claim
26 words
A method as recited in claim 1 wherein said semiconductor substrate is silicon and wherein the thickness of said film is less than about 1,000 A.
Claim 9
Dependent Claim
41 words
In a semiconductor structure having a layer of hydrogenated amorphous silicon adjacent a surface of a crystalline semiconductor substrate, the improvement comprising a film containing carbon atoms disposed on said surface between said substrate and said layer of hydrogenated amorphous silicon.
Claim 10
Dependent Claim
41 words
In a semiconductor structure having a layer of hydrogenated amorphous silicon adjacent a surface of a crystalline semiconductor substrate, the improvement comprising a film containing carbon atoms disposed on said surface between said substrate and said layer of hydrogenated amorphous silicon.
Claim 11
Dependent Claim
33 words
A semiconductor structure as defined in claim 8 wherein said semiconductor substrate is silicon and wherein said film comprises a thin film of amorphous carbon having a thickness less that about 1,000 A.
Claim 12
Dependent Claim
35 words
A semiconductor structure as defined in claim 8 wherein the hydrogen concentration profile across said layer of hydrogenated amorphous silicon has a maximum value in substantially the central region of said hydrogenated amorphous silicon layer.
Claim 13
Dependent Claim
35 words
A semiconductor structure as defined in claim 8 wherein the hydrogen concentration profile across said layer of hydrogenated amorphous silicon has a minimum value in substantially the central region of said hydrogenated amorphous silicon layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-03-02 | 1984-09-01 | 1985-03-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-03-02 | 1988-09-01 | 1989-03-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-03-02 | 1992-09-01 | 1993-03-03 | $7700.00 | Window Closed / Lapsed |