Patent US4254340A successfully refreshed from Google Patents.
US4254340A
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High current ion implanter
Assignee: Bpifrance Financement SA
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Filing: 1979-01-08
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Granted: 1981-03-03
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Expires: 1999-01-08
Abstract
Abstract High current ion implanter of the type comprising, in a vacuum enclosure, an ion source, means for extracting these ions, scanning means and a sample-carrying target, wherein the scanning means are of the electrostatic type and comprise deflecting plates connected to a sawtooth-variable voltage source and wherein a regulatable magnetic refocussing means are disposed in the vicinity of said plates. A particular application of the invention is to the construction of ion implanters intended for use in the manufacture of semiconductors.
Inventors
- 👤 Jean Camplan
- 👤 Jacques Chaumont
- 👤 Robert Meunier
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 10:17
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3171
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
68 words
A high current ion implanter of the type comprising in a vacuum enclosure an ion source, means for extracting these ions, scanning means and a sample-carrying target, wherein the scanning means are of the electrostatic type and comprise deflecting plates connected to a variable voltage source and wherein magnetic refocussing means provided with a regulatable source of energizing current therefor is disposed in the vicinity of said plates.
Claim 2
Dependent Claim
68 words
A high current ion implanter of the type comprising in a vacuum enclosure an ion source, means for extracting these ions, scanning means and a sample-carrying target, wherein the scanning means are of the electrostatic type and comprise deflecting plates connected to a variable voltage source and wherein magnetic refocussing means provided with a regulatable source of energizing current therefor is disposed in the vicinity of said plates.
Claim 3
Dependent Claim
18 words
An ion implanter according to claim 1, wherein the refocussing means is disposed upstream of the deflecting plates.
Claim 4
Dependent Claim
24 words
An ion implanter according to claim 1, wherein the magnetic refocussing means comprises at least one magnetic quadrupole or at least one magnetic lens.
Claim 5
Dependent Claim
14 words
An ion implanter according to claim 1, wherein the magnetic means has overfocussing characteristics.
Claim 6
Dependent Claim
28 words
An ion implanter according to claim 1, which also comprises at least one lens positioned upstream and/or downstream of the deflecting plates for auxiliary focussing of the beam.
Claim 7
Dependent Claim
19 words
An ion implanter according to claim 5, wherein each lens for auxiliary focussing is connected to a guard ring.
Claim 8
Dependent Claim
32 words
An ion implanter according to claim 5, wherein each lens for auxiliary focussing is an electrostatic lens and comprises two guard rings connected to earth between which is located the lens electrode.
Claim 9
Dependent Claim
19 words
An ion implanter according to claim 7, wherein the electrode of a lens is connected to the apparatus earth.
Claim 10
Dependent Claim
35 words
An ion implanter according to claim 1, wherein the deflecting plates are brought to a potential which is alternately positive and negative relative to the apparatus earth, the mean value of the potential being positive.
Claim 11
Dependent Claim
19 words
An ion implanter according to claim 9, wherein the potential applied to the deflecting plates has a triangular variation.
Claim 12
Independent Claim
77 words
A method for regulating the dimensions of an ion beam in a high current ion implanter relative to a target, said implanter comprising an electrostatic scanning means and a regulatable magnetic refocussing means, wherein the focussing means are regulated while the scanning means are not in operation to obtain an ion beam focussed in front of the target, whereby when the scanning means are thereafter put into operation an ion beam focussed on the target is obtained.
Claim 13
Independent Claim
77 words
A method for regulating the dimensions of an ion beam in a high current ion implanter relative to a target, said implanter comprising an electrostatic scanning means and a regulatable magnetic refocussing means, wherein the focussing means are regulated while the scanning means are not in operation to obtain an ion beam focussed in front of the target, whereby when the scanning means are thereafter put into operation an ion beam focussed on the target is obtained.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-03-02 | 1984-09-01 | 1985-03-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-03-02 | 1988-09-01 | 1989-03-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-03-02 | 1992-09-01 | 1993-03-03 | $7700.00 | Window Closed / Lapsed |