Patent US4251571A successfully refreshed from Google Patents.
US4251571A
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US
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Method for forming semiconductor structure with improved isolation between two layers of polycrystalline silicon
Assignee: International Business Machines Corp
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Filing: 1978-05-02
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Granted: 1981-02-17
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Expires: 1998-05-02
Abstract
Abstract In a field effect device such as a charge coupled device or field effect transistor in which at least two levels of polycrystalline silicon conductors are used; these two levels of polycrystalline silicon are isolated from one another with a dielectric layer. Disclosed is a composite dielectric layer formed either by in situ oxidation of the first polycrystalline silicon layer plus chemical vapor deposited silicon dioxide or, in the alternative, the composite dielectric layer is formed by a phosphosilicate glass layer with thermal reoxidation of the first polycrystalline silicon layer.
Inventors
- 👤 Paul L. Garbarino
- 👤 Stanley R. Makarewicz
- 👤 Joseph F. Shepard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 18:12
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D1/00; H10D1/60; H10D1/62; H10D1/64; H10D44/00; H10D44/01; H10D44/041; H10D84/00; H10D84/01; H10D84/0198; H10D84/02; H10D84/03; H10D84/038; H10P; H10P95/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01346
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
85 words
A method for forming insulated polycrystalline silicon conductors for field effect devices comprising: forming a silicon dioxide gate insulating layer on a silicon substrate; forming a first polycrystalline silicon electrode over a portion of said gate insulating layer; forming a composite insulating layer over said first polycrystalline silicon electrode particularly at vertical surfaces thereof while simultaneously forming a composite gate insulating layer; and forming a second polycrystalline silicon electrode over said composite gate insulating layer and at least a portion of said composite insulating layer.
Claim 2
Independent Claim
85 words
A method for forming insulated polycrystalline silicon conductors for field effect devices comprising: forming a silicon dioxide gate insulating layer on a silicon substrate; forming a first polycrystalline silicon electrode over a portion of said gate insulating layer; forming a composite insulating layer over said first polycrystalline silicon electrode particularly at vertical surfaces thereof while simultaneously forming a composite gate insulating layer; and forming a second polycrystalline silicon electrode over said composite gate insulating layer and at least a portion of said composite insulating layer.
Claim 3
Dependent Claim
82 words
A method as in claim 1 wherein the step of forming said composite insulating layer comprises: exposing the structure to a vapor containing both phosphorous and oxygen atoms thereby forming a layer of phosphosilicate glass; and exposing the resultant structure to a vapor containing oxygen atoms, said oxygen atoms penetrating through said phosphosilicate glass thereby oxidizing at least a portion of said polycrystalline silicon electrode in situ forming a layer of silicon dioxide material between said phosphosilicate glass and said polycrystalline silicon.
Claim 4
Dependent Claim
63 words
A method as in claim 1 where the step of forming said composite insulating layer comprises: exposing the structure to a vapor containing oxygen atoms, thereby oxidizing at least a portion of said polycrysalline silicon in situ forming silicon dioxide; and exposing the structure to a vapor containing phosphorous and oxygen atoms thereby forming phosphosilicate glass over said in situ converted silicon dioxide.
Claim 5
Dependent Claim
64 words
A method as in claim 1 wherein the step of forming said composite insulating layer comprises: exposing the structure to a vapor containing oxygen atoms, thereby oxidizing at least a portion of said polycrystalline silicon in situ forming silicon dioxide; and depositing a layer of chemical vapor deposited silicon dioxide over the in situ converted silicon dioxide layer, thereby forming a composite insulating layer.
Claim 6
Independent Claim
29 words
A method as in claims 2 or 3 wherein said vapor containing phosphorous and oxygen atoms is applied at an elevated temperature of approximately 800° C. to 870° C.
Claim 7
Dependent Claim
46 words
A method as in claim 2, 3 or 4 wherein in the step of exposing the structure to an atmosphere containing oxygen atoms takes place at an elevated temperature of approximately 970° C. to 1,050° C. for a time of approximately 15 minutes to 40 minutes.
Claim 8
Independent Claim
113 words
A method for forming insulated conductors for field effect devices comprising: forming a silicon dioxide gate insulating layer on a silicon substrate; forming a first polycrystalline silicon electrode over a portion of said gate insulating layer; forming a composite insulating layer over said first polysilicon electrode particularly at vertical surfaces thereof while simultaneously forming a composite gate insulating layer; forming a second electrode over said composite gate insulating layer and at least a portion of said composite insulating layer; forming an opening to said silicon substrate; introducing impurities through said opening into said substrate, thereby forming a doped region; and forming a metallic contact to at least a portion of said doped region.
Claim 9
Independent Claim
113 words
A method for forming insulated conductors for field effect devices comprising: forming a silicon dioxide gate insulating layer on a silicon substrate; forming a first polycrystalline silicon electrode over a portion of said gate insulating layer; forming a composite insulating layer over said first polysilicon electrode particularly at vertical surfaces thereof while simultaneously forming a composite gate insulating layer; forming a second electrode over said composite gate insulating layer and at least a portion of said composite insulating layer; forming an opening to said silicon substrate; introducing impurities through said opening into said substrate, thereby forming a doped region; and forming a metallic contact to at least a portion of said doped region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-02-17 | 1984-08-18 | 1985-02-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-02-17 | 1988-08-18 | 1989-02-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-02-17 | 1992-08-18 | 1993-02-17 | $7700.00 | Window Closed / Lapsed |