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US4249249A
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US
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Ion-implanted bubble memory
Assignee: AT&T Inc
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Filing: 1979-12-03
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Granted: 1981-02-03
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Expires: 1999-12-03
Abstract
Abstract A magnetic bubble memory of the G-shaped organization is implemented by ion-implantation. Attractive operating margins are realized by the use of transfer-out arrangements which moves bubbles in parallel first to an auxiliary path and thereafter to the major loop in a manner to invert the data.
Inventors
- 👤 Peter I. Bonyhard
- 👤 Terence J. Nelson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 19:40
CPC Classifications
G; G11; G11C; G11C19/00; G11C19/02; G11C19/08; G11C19/0875; G11C19/0883
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
92 words
A magnetic bubble memory comprising a layer of material in which magnetic bubbles can be moved, a pattern of ion-implanted regions in said layer for defining a plurality of minor loops for recirculating bubbles therein through transfer positions in response to a field reorienting cyclically in the plane of said layer, said pattern also defining first and second multistage paths associated with said first ends, and transfer means for moving a bubble pattern selectively from said transfer positions to associated positions in said second path through associated positions in said first path.
Claim 2
Dependent Claim
92 words
A magnetic bubble memory comprising a layer of material in which magnetic bubbles can be moved, a pattern of ion-implanted regions in said layer for defining a plurality of minor loops for recirculating bubbles therein through transfer positions in response to a field reorienting cyclically in the plane of said layer, said pattern also defining first and second multistage paths associated with said first ends, and transfer means for moving a bubble pattern selectively from said transfer positions to associated positions in said second path through associated positions in said first path.
Claim 3
Dependent Claim
37 words
A magnetic bubble memory in accordance with claim 1 wherein said first and second paths respond to said reorienting field to move bubbles in first and second direction respectively and interconnect to form a multistage major loop.
Claim 4
Dependent Claim
28 words
A magnetic bubble memory in accordance with claim 2 wherein each of said first and second paths includes a stage thereof associated with each of said minor loops.
Claim 5
Dependent Claim
39 words
A magnetic bubble memory in accordance with claim 3 wherein said major loop has a U-shaped geometry with first and second legs where said legs include stages associated with said minor loops at said first and second ends respectively.
Claim 6
Dependent Claim
46 words
A magnetic bubble memory in accordance with claim 3 wherein said transfer means includes means responsive to first and second pulses applied during a cycle of said reorienting field for transferring bubbles from said transfer positions to associated stages in said first and second path consecutively.
Claim 7
Dependent Claim
43 words
A magnetic memory in accordance with claim 1 wherein said major path is defined by a sequence of nonimplanted multistage islands separated by ion-implanted gaps, each of said islands being associated with a different one of said minor loops at said first ends.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-02-03 | 1984-08-04 | 1985-02-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-02-03 | 1988-08-04 | 1989-02-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-02-03 | 1992-08-04 | 1993-02-03 | $7700.00 | Window Closed / Lapsed |